Imperial College London
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ProfessorAronWalsh

Faculty of Engineering, Department of Materials

Chair in Materials Design
 
 
 
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Contact

 

+44 (0)20 7594 1178a.walsh Website

 
 
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Location

 

2.10Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Kim:2020:10.1039/d0ee00291g,
author = {Kim, S and Marquez, JA and Unold, T and Walsh, A},
doi = {10.1039/d0ee00291g},
journal = {Energy and Environmental Science},
pages = {1481--1491},
title = {Upper limit to the photovoltaic efficiency of imperfect crystals from first principles},
url = {http://dx.doi.org/10.1039/d0ee00291g},
volume = {13},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - The Shockley–Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and computational method to predict the maximum photovoltaic efficiency of imperfect crystals from first principles. The trap-limited conversion efficiency includes equilibrium populations of native defects, their carrier-capture coefficients, and the associated recombination rates. When applied to kesterite solar cells, we reveal an intrinsic limit of 20% for Cu2ZnSnSe4, which falls far below the SQ limit of 32%. The effects of atomic substitution and extrinsic doping are studied, leading to pathways for an enhanced efficiency of 31%. This approach can be applied to support targeted-materials selection for future solar-energy technologies.
AU  - Kim,S
AU  - Marquez,JA
AU  - Unold,T
AU  - Walsh,A
DO  - 10.1039/d0ee00291g
EP  - 1491
PY  - 2020///
SN  - 1754-5692
SP  - 1481
TI  - Upper limit to the photovoltaic efficiency of imperfect crystals from first principles
T2  - Energy and Environmental Science
UR  - http://dx.doi.org/10.1039/d0ee00291g
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000536818900008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://pubs.rsc.org/en/content/articlelanding/2020/EE/D0EE00291G#!divAbstract
UR  - http://hdl.handle.net/10044/1/84273
VL  - 13
ER  -
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