Imperial College London
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ProfessorAronWalsh

Faculty of Engineering, Department of Materials

Chair in Materials Design
 
 
 
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Contact

 

+44 (0)20 7594 1178a.walsh Website

 
 
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Location

 

2.10Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Kavanagh:2021:10.1021/acsenergylett.1c00380,
author = {Kavanagh, SR and Walsh, A and Scanlon, DO},
doi = {10.1021/acsenergylett.1c00380},
journal = {ACS Energy Letters},
pages = {1392--1398},
title = {Rapid recombination by cadmium vacancies in CdTe},
url = {http://dx.doi.org/10.1021/acsenergylett.1c00380},
volume = {6},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - CdTe is currently the largest thin-film photovoltaic technology. Non-radiative electron–hole recombination reduces the solar conversion efficiency from an ideal value of 32% to a current champion performance of 22%. The cadmium vacancy (VCd) is a prominent acceptor species in p-type CdTe; however, debate continues regarding its structural and electronic behavior. Using ab initio defect techniques, we calculate a negative-U double-acceptor level for VCd, while reproducing the VCd1– hole–polaron, reconciling theoretical predictions with experimental observations. We find the cadmium vacancy facilitates rapid charge-carrier recombination, reducing maximum power-conversion efficiency by over 5% for untreated CdTe—a consequence of tellurium dimerization, metastable structural arrangements, and anharmonic potential energy surfaces for carrier capture.
AU  - Kavanagh,SR
AU  - Walsh,A
AU  - Scanlon,DO
DO  - 10.1021/acsenergylett.1c00380
EP  - 1398
PY  - 2021///
SN  - 2380-8195
SP  - 1392
TI  - Rapid recombination by cadmium vacancies in CdTe
T2  - ACS Energy Letters
UR  - http://dx.doi.org/10.1021/acsenergylett.1c00380
UR  - https://pubs.acs.org/doi/10.1021/acsenergylett.1c00380
UR  - http://hdl.handle.net/10044/1/87888
VL  - 6
ER  -
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