Imperial College London
Emeritus Professor Joyce

Emeritus Professor Joyce

Faculty of Natural Sciences, Department of Physics

Distinguished Research Fellow
 
 
 
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Contact

 

b.a.joyce

 
 
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Assistant

 

Mrs Theresa Debono +44 (0)20 7594 7603

 
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Location

 

813Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

300 results found

Gocalinska A, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Joyce BA, Zhang J, Vvedensky DD, Pelucchi Eet al., 2014, Unusual nanostructures of "lattice matched" InP on AlInAs, Applied Physics Letters, Vol: 104, ISSN: 0003-6951

ABSTRACTWe show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology.The formation of interfaces with structural, compositional, and morphological integrity is crucial for the performance of many devices. Imperfect interfaces produce broadening in photoluminescence line widths and degrade electronic transport by enhanced scattering. Structure and morphology can be optimized through controlled sample preparation and a judicious choice of growth conditions. However, while semiconductor alloys enable band gaps to be engineered, the attainment of compositional uniformity presents altogether different challenges. Indeed, in III–V systems, phase separation is common when alloys are deposited onto a lattice-matched substrate, for example, by molecular-beam epitaxy (MBE).1 Our focus here is Al1−xInxAs, a large band-gap (lattice-matched) material used in heterostructures with InP. When produced by MBE (in specific, but a relatively large range of growth conditions), this alloy is known to exhibit clustering when deposited onto InP.2,3 Interestingly, theoretical studies4,5 have shown that this type of incipient spinodal decomposition is forbidden if the surface of the alloy film is perfectly flat because of the regions of additional strain created with respect to the random alloy, which has zero mean strain everywhere. But on a surface with roughness, phase separation can become more active at roughness-i

Journal article

Gocalinska A, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Joyce BA, Zhang J, Vvedensky DD, Pelucchi Eet al., 2014, InP-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE, 26th International Conference on Indium Phosphide and Related Materials (IPRM), Publisher: IEEE, ISSN: 1092-8669

Conference paper

Pashley DW, Neave JH, Joyce BA, 2009, A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (001) oriented surfaces, SURFACE SCIENCE, Vol: 603, Pages: L1-L4, ISSN: 0039-6028

Journal article

Tejedor P, Crespillo ML, Joyce BA, 2006, Growth mode transitions induced by hydrogen-assisted MBE on vicinal GaAs(110), Meeting of the European-Materials-Research-Society, Publisher: ELSEVIER, Pages: 852-856, ISSN: 0928-4931

Conference paper

Tejedor P, Crespillo ML, Joyce BA, 2006, Influence of atomic hydrogen on step stability during homoepitaxial growth on vicinal GaAs surfaces, APPLIED PHYSICS LETTERS, Vol: 88, ISSN: 0003-6951

Journal article

Pashley DW, Neave JH, Joyce BA, 2005, Long-range disorder effects on the GaAs(001) beta 2(2 x 4) surface, SURFACE SCIENCE, Vol: 582, Pages: 189-201, ISSN: 0039-6028

Journal article

Crespillo ML, Sacedon JL, Joyce BA, Tejedor Pet al., 2005, Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110), 5th International Conference on Low Dimensional Structures and Devices (LDSD 2004), Publisher: ELSEVIER SCI LTD, Pages: 581-585, ISSN: 0026-2692

Conference paper

Zhi D, Hytch MJ, Dunin-Borkowski RE, Midgley PA, Pashley DW, Joyce BA, Jones TSet al., 2005, The structure of coherent and incoherent InAs/GaAs quantum dots, 14th Conference on Microscopy of Semiconducting Materials, Publisher: SPRINGER-VERLAG BERLIN, Pages: 243-246, ISSN: 0930-8989

Conference paper

Zhi D, Midgley PA, Dunin-Borkowski RE, Joyce BA, Pashley DW, Bleloch AL, Goodhew PJet al., 2005, Growth and overgrowth of Ge/Si quantum dots: An observation by atomic resolution HAADF-STEM imaging, Symposium on Group-4 Semiconductor Nanostructures held at the 2004 MRS Fall Meeting, Publisher: MATERIALS RESEARCH SOC, Pages: 105-110, ISSN: 0272-9172

Conference paper

Joyce BA, Vvedensky DD, 2005, Quantum dots in the InAs/GaAs system - An overview of their formation, NATO Advanced Research Workshop on Quantum Dots - Fundamentals, Applications, and Frontieres, Publisher: SPRINGER, Pages: 1-26, ISSN: 1568-2609

Conference paper

Joyce BA, Vvedensky DD, 2005, Quantum dots in the InAs--GaAs system: an overview of their formation (Invited), Dordrecht, Quantum dots: fundamentals, applications, and frontiers, proceedings of the NATO ARW on quantum dots: fundamentals, applications and frontiers, Ammoudara, Crete, Greece, 20 - 24 July 2003, Publisher: Springer, Pages: 1-26

Conference paper

Joyce BA, Kelires PC, Naumovets AG, Vvedensky DDet al., 2005, Quantum dots: fundamentals, applications, and frontiers, proceedings of the NATO ARW on quantum dots: fundamentals, applications and frontiers, Ammoudara, Crete, Greece, 20 - 24 July 2003, Publisher: Springer, ISBN: 9781402033131

Book

Joyce BA, Vvedensky DD, 2004, Self-organized growth on GaAs surfaces, MAT SCI ENG R, Vol: 46, Pages: 127-176, ISSN: 0927-796X

GaAs(001) has been one of the most intensively studied surfaces for the past 30 years due both to its importance as a substrate for epitaxial growth and to the challenge its phase diagram of complex structures presents to computational methods. Yet despite substantial experimental and theoretical effort, a number of fundamental questions remain concerning growth kinetics and mechanisms on this surface, even for homoepitaxy, but more especially in the formation of heterostructures. These issues have acquired a renewed timeliness because the quantum dots that are formed during the Stranski-Krastanov (SK) growth of InAs on GaAs(001) can be used for optoelectronic applications and have potential in quantum dot-based architectures for quantum computing. In this review we survey the current state of understanding of growth kinetics on GaAs surfaces, beginning with the simplest case, homoepitaxy on GaAs(001). We compare interpretations of recent reflection high energy electron diffraction measurements taken during the initial stages of growth with predictions of ab initio density functional calculations. We also consider the extent to which snapshot scanning tunnelling microscopy images from rapidly quenched samples truly reflect the growing surface structure as revealed by in situ real-time methods. We then examine the present experimental and theoretical status of the SK growth of InAs quantum dots on singular orientations of low-index GaAs surfaces, focussing on such issues as the importance of substrate orientation and surface reconstruction of the substrate, wetting layer formation, the nucleation kinetics of quantum dots, their size distributions and the role of strain. The systematics and anomalies of the phenomenology will be highlighted, as well as the current understanding of quantum dot formation. (C) 2004 Elsevier B.V. All rights reserved.

Journal article

Zhi D, Wei M, Dunin-Borkowski RE, Midgley PA, Pashley DW, Jones TS, Joyce BA, Fewster PF, Goodhew PJet al., 2004, The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy, 29th International Conference on Micro and Nano Engineering (MNE 2003), Publisher: ELSEVIER, Pages: 604-609, ISSN: 0167-9317

Conference paper

ZHI D, 2004, The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy, Microelectronic Engineering, Vol: 73-74, Pages: 604-609, ISSN: 0167-9317

Journal article

Joyce BA, Joyce TB, 2004, Basic studies of molecular beam epitaxy - past, present and some future directions, Symposium on 50 Years of Progress in Crystal Growth, Publisher: ELSEVIER SCIENCE BV, Pages: 605-619, ISSN: 0022-0248

Conference paper

Crespillo ML, Sacedon JL, Joyce BA, Tejedor Pet al., 2004, Nanopatterning of GaAs(110) vicinal surfaces by hydrogen-assisted MBE (In press), Materials Research Society, Boston, Publisher: Materials Research Society

Conference paper

Zhi D, Wei M, Pashley DW, Joyce BA, Weyland M, Laffont L, Yates TJV, Twitchett AC, Dunin-Borkowski RE, Midgley PAet al., 2004, The structure of uncapped, buried and multiple stacked Ge/Si quantum dots, Bristol, Institute of Physics Electron Microscopy and Analysis group conference (EMAG 2003), Oxford, England, 3 - 5 September 2003, Publisher: IOP Publishing Ltd, Pages: 39-42

Conference paper

Joyce BA, 2003, In situ studies of the MBE growth of III-V systems using RHEED and STM, Annual Conference of the British-Association-for-Crystal-Growth (BACG), Publisher: SPRINGER, Pages: 591-598, ISSN: 0957-4522

Conference paper

Zhi D, Fewster PF, Pashley DW, Joyce BA, Goodhew PJ, Jones TSet al., 2003, Determination of size, shape and composition of buried InAs/GaAs quantum dots: scanning transmission electron microscopy vs. in-plane X- ray scattering, Bristol, Conference on microscopy of semiconducting materials, Cambridge, England, 31 March 2003, Publisher: IOP Publishing Ltd, Pages: 91-94

Conference paper

Zhi D, Wei M, Jones TS, Pashley DW, Zhang J, Joyce BA, Dunin-Borkowski RE, Midgley PAet al., 2003, Facet formation in Si layers selectively grown on patterned substrates studied by different electron microscopy techniques, Bristol, Conference on Microscopy of Semiconducting Materials, University of Cambridge, Cambridge, England, 31 March 2003, Publisher: IOP Publishing Ltd, Pages: 239-242

Conference paper

Joyce BA, Vvedensky DD, 2002, Mechanisms and anomalies in the formation of InAa-GaAs(001) quantum dot structures, Dordrecht, NATO Advanced Research Workshop on atomistic aspects of epitaxial growth, Dassia, Greece, 25 - 30 June 2001, Publisher: Kluwer Academic, Pages: 301-325

Conference paper

Tok ES, Zhang J, Kamiya I, Xie MH, Neave JH, Joyce BAet al., 2001, Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries, International Symposium on the Science of Surface and Nanostructures, Publisher: WORLD SCIENTIFIC PUBL CO PTE LTD, Pages: 509-511, ISSN: 0218-625X

Conference paper

Pashley DW, Neave JH, Joyce BA, 2001, A model for the appearance of chevrons on RHEED patterns from InAs quantum dots, SURFACE SCIENCE, Vol: 476, Pages: 35-42, ISSN: 0039-6028

Journal article

Dunbar A, Bangert U, Dawson P, Halsall M, Shiraki Y, Miura M, Berbezier I, Joyce BA, Zhang Jet al., 2001, Structural, compositional and optical properties of self-organised Ge quantum dots, International Conference on Semiconductor Quantum Dots (QD2000), Publisher: WILEY-V C H VERLAG GMBH, Pages: 265-269, ISSN: 0370-1972

Conference paper

Zhi D, Davock H, Murray R, Roberts C, Jones TS, Pashley DW, Goodhew PJ, Joyce BAet al., 2001, Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy, JOURNAL OF APPLIED PHYSICS, Vol: 89, Pages: 2079-2083, ISSN: 0021-8979

Journal article

Zhi D, Pashley DW, Joyce BA, Jones TSet al., 2001, The structure of uncapped and capped InAs/GaAs quantum dots, Bristol, Royal Microscopical Society conference on microscopy of semiconducting materials, Oxford, England, 25 - 29 March 2001, Publisher: IOP Publishing Ltd, Pages: 89-92

Conference paper

Zheng YJ, Engstrom JR, Zhang J, Schellinger A, Joyce BAet al., 2000, The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane, SURFACE SCIENCE, Vol: 470, Pages: 131-140, ISSN: 0039-6028

Journal article

Itoh M, Bell GR, Joyce BA, Vvedensky DDet al., 2000, Transformation kinetics of homoepitaxial islands on GaAs(001), SURFACE SCIENCE, Vol: 464, Pages: 200-210, ISSN: 0039-6028

Journal article

Steans PH, Neave JH, Bell GR, Zhang J, Joyce BA, Jones TSet al., 2000, A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURFACE SCIENCE, Vol: 459, Pages: 277-286, ISSN: 0039-6028

Journal article

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