Imperial College London
Portrait Picture

Dr Ben Almquist FIMMM

Faculty of Engineering, Department of Bioengineering

Senior Lecturer
 
 
 
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Contact

 

+44 (0)20 7594 6494b.almquist Website

 
 
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Location

 

413Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Sun:2018:10.1002/admi.201800836,
author = {Sun, J and Almquist, BD},
doi = {10.1002/admi.201800836},
journal = {Advanced Materials Interfaces},
pages = {1--8},
title = {Interfacial contact is required for metal-assisted plasma etching of silicon},
url = {http://dx.doi.org/10.1002/admi.201800836},
volume = {5},
year = {2018}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - For decades, fabrication of semiconductor devices has utilized wellestablished etching techniques to create complex nanostructures in silicon. The most common dry process is reactive ion etching which fabricates nanostructures through the selective removal of unmasked silicon. Generalized enhancements of etching have been reported with maskenhanced etching with Al, Cr, Cu, and Ag masks, but there is a lack of reports exploring the ability of metallic films to catalytically enhance the local etching of silicon in plasmas. Here, metalassisted plasma etching (MAPE) is performed using patterned nanometersthick gold films to catalyze the etching of silicon in an SF6/O2 mixed plasma, selectively increasing the rate of etching by over 1000%. The catalytic enhancement of etching requires direct Simetal interfacial contact, similar to metalassisted chemical etching (MACE), but is different in terms of the etching mechanism. The mechanism of MAPE is explored by characterizing the degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu.
AU  - Sun,J
AU  - Almquist,BD
DO  - 10.1002/admi.201800836
EP  - 8
PY  - 2018///
SN  - 2196-7350
SP  - 1
TI  - Interfacial contact is required for metal-assisted plasma etching of silicon
T2  - Advanced Materials Interfaces
UR  - http://dx.doi.org/10.1002/admi.201800836
UR  - https://onlinelibrary.wiley.com/doi/full/10.1002/admi.201800836
UR  - http://hdl.handle.net/10044/1/65201
VL  - 5
ER  -
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