Publications
440 results found
Burgess T, Du S, Gault B, et al., 2012, Quantification of the zinc dopant concentration in GaAs nanowires, Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Publisher: IEEE, Pages: 41-+, ISSN: 1097-2137
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- Citations: 1
Gault B, Chen YM, Moody MP, et al., 2011, Influence of the wavelength on the spatial resolution of pulsed-laser atom probe, JOURNAL OF APPLIED PHYSICS, Vol: 110, ISSN: 0021-8979
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- Citations: 14
Gault B, Loi ST, Araullo-Peters VJ, et al., 2011, Dynamic reconstruction for atom probe tomography, Ultramicroscopy, Vol: 111, Pages: 1619-1624, ISSN: 0304-3991
Progress in the reconstruction for atom probe tomography has been limited since the first implementation of the protocol proposed by Bas et al. in 1995. This approach and those subsequently developed assume that the geometric parameters used to build the three-dimensional atom map are constant over the course of an analysis. Here, we test this assumption within the analyses of low-alloyed materials. By building upon methods recently proposed to measure the tomographic reconstruction parameters, we demonstrate that this assumption can introduce significant limitations in the accuracy of the analysis. Moreover, we propose a strategy to alleviate this problem through the implementation of a new reconstruction algorithm that dynamically accommodates variations in the tomographic reconstruction parameters.
Stephenson LT, Moody MP, Gault B, et al., 2011, Estimating the Physical Cluster-Size Distribution Within Materials Using Atom-Probe, MICROSCOPY RESEARCH AND TECHNIQUE, Vol: 74, Pages: 799-803, ISSN: 1059-910X
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- Citations: 24
Yeoh WK, Gault B, Cui XY, et al., 2011, Direct Observation of Local Potassium Variation and Its Correlation to Electronic Inhomogeneity in (Ba<sub>1-<i>x</i></sub>K<i><sub>x</sub></i>)Fe<sub>2</sub>As<sub>2</sub> Pnictide, PHYSICAL REVIEW LETTERS, Vol: 106, ISSN: 0031-9007
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- Citations: 45
Mueller M, Saxey DW, Smith GDW, et al., 2011, Some aspects of the field evaporation behaviour of GaSb, ULTRAMICROSCOPY, Vol: 111, Pages: 487-492, ISSN: 0304-3991
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- Citations: 69
Gault B, de Geuser F, Bourgeois L, et al., 2011, Atom probe tomography and transmission electron microscopy characterisation of precipitation in an Al-Cu-Li-Mg-Ag alloy, ULTRAMICROSCOPY, Vol: 111, Pages: 683-689, ISSN: 0304-3991
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- Citations: 83
Gault B, Haley D, de Geuser F, et al., 2011, Advances in the reconstruction of atom probe tomography data, ULTRAMICROSCOPY, Vol: 111, Pages: 448-457, ISSN: 0304-3991
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- Citations: 183
Moody MP, Tang F, Gault B, et al., 2011, Atom probe crystallography: Characterization of grain boundary orientation relationships in nanocrystalline aluminium, ULTRAMICROSCOPY, Vol: 111, Pages: 493-499, ISSN: 0304-3991
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- Citations: 45
Hyde JM, Burke MG, Gault B, et al., 2011, Atom probe tomography of reactor pressure vessel steels: An analysis of data integrity, ULTRAMICROSCOPY, Vol: 111, Pages: 676-682, ISSN: 0304-3991
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- Citations: 30
Hudson D, Smith GDW, Gault B, 2011, Optimisation of mass ranging for atom probe microanalysis and application to the corrosion processes in Zr alloys, ULTRAMICROSCOPY, Vol: 111, Pages: 480-486, ISSN: 0304-3991
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- Citations: 37
Moody MP, Gault B, Stephenson LT, et al., 2011, Lattice Rectification in Atom Probe Tomography: Toward True Three-Dimensional Atomic Microscopy, MICROSCOPY AND MICROANALYSIS, Vol: 17, Pages: 226-239, ISSN: 1431-9276
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- Citations: 51
Hoummada K, Mangelinck D, Gault B, et al., 2011, Nickel segregation on dislocation loops in implanted silicon, SCRIPTA MATERIALIA, Vol: 64, Pages: 378-381, ISSN: 1359-6462
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- Citations: 39
Mueller M, Gault B, Smith GDW, et al., 2011, Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis, 17th International Conference on Microscopy of Semiconducting Materials, Publisher: AMER INST PHYSICS, ISSN: 1742-6588
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- Citations: 31
Gault B, Marquis EA, Saxey DW, et al., 2010, High-resolution nanostructural investigation of Zn<sub>4</sub>Sb<sub>3</sub> alloys, SCRIPTA MATERIALIA, Vol: 63, Pages: 784-787, ISSN: 1359-6462
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- Citations: 32
Gault B, Mueller M, La Fontaine A, et al., 2010, Influence of surface migration on the spatial resolution of pulsed laser atom probe tomography, Publisher: AMER INST PHYSICS, ISSN: 0021-8979
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- Citations: 78
Gault B, La Fontaine A, Moody MP, et al., 2010, Impact of laser pulsing on the reconstruction in an atom probe tomography, ULTRAMICROSCOPY, Vol: 110, Pages: 1215-1222, ISSN: 0304-3991
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- Citations: 42
Tang F, Gault B, Ringer SP, et al., 2010, Microstructural investigation of Ti-Si-N hard coatings, SCRIPTA MATERIALIA, Vol: 63, Pages: 192-195, ISSN: 1359-6462
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- Citations: 22
Tang F, Gault B, Ringer SP, et al., 2010, Optimization of pulsed laser atom probe (PLAP) for the analysis of nanocomposite Ti-Si-N films, ULTRAMICROSCOPY, Vol: 110, Pages: 836-843, ISSN: 0304-3991
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- Citations: 55
Gault B, Yang W, Ratinac KR, et al., 2010, Atom Probe Microscopy of Self-Assembled Monolayers: Preliminary Results, LANGMUIR, Vol: 26, Pages: 5291-5294, ISSN: 0743-7463
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- Citations: 23
Gault B, Moody MP, De Geuser F, et al., 2010, Spatial resolution in atom probe tomography, Microscopy and Microanalysis, Vol: 16, Pages: 99-110, ISSN: 1431-9276
This article addresses gaps in definitions and a lack of standard measurement techniques to assess the spatial resolution in atom probe tomography. This resolution is known to be anisotropic, being better in-depth than laterally. Generally the presence of atomic planes in the tomographic reconstruction is considered as being a sufficient proof of the quality of the spatial resolution of the instrument. Based on advanced spatial distribution maps, an analysis methodology that interrogates the local neighborhood of the atoms within the tomographic reconstruction, it is shown how both the in-depth and the lateral resolution can be quantified. The influences of the crystallography and the temperature are investigated, and models are proposed to explain the observed results. We demonstrate that the absolute value of resolution is specimen specific.
Yao L, Gault B, Cairney JM, et al., 2010, On the multiplicity of field evaporation events in atom probe: A new dimension to the analysis of mass spectra, PHILOSOPHICAL MAGAZINE LETTERS, Vol: 90, Pages: 121-129, ISSN: 0950-0839
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- Citations: 84
Tang F, Alam T, Moody MP, et al., 2010, Challenges Associated with the Characterisation of Nanocrystalline Materials using Atom Probe Tomography, 7th Pacific Rim International Conference on Advanced Materials and Processing, Publisher: TRANS TECH PUBLICATIONS LTD, Pages: 2366-+, ISSN: 0255-5476
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- Citations: 6
Gault B, Moody MP, de Geuser F, et al., 2009, Origin of the spatial resolution in atom probe microscopy, APPLIED PHYSICS LETTERS, Vol: 95, ISSN: 0003-6951
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- Citations: 73
Moody MP, Gault B, Stephenson LT, et al., 2009, Applications of spatial distribution maps for advanced atom probe reconstruction and data analysis, Microscopy and Microanalysis, Vol: 15, Pages: 246-247, ISSN: 1431-9276
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- Citations: 10
Gault B, Yang W, Ratinac KR, et al., 2009, Investigation of Self-Assembled Monolayer by Atom Probe Microscopy, MICROSCOPY AND MICROANALYSIS, Vol: 15, Pages: 272-273, ISSN: 1431-9276
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- Citations: 4
Ulfig RM, Kelly TF, Gault B, 2009, Promoting Standards in Quantitative Atom Probe Tomography Analysis, MICROSCOPY AND MICROANALYSIS, Vol: 15, Pages: 260-261, ISSN: 1431-9276
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- Citations: 2
Gault B, Moody MP, Marquis EA, et al., 2009, Tomographic Reconstruction in Atom Probe Microscopy: Past, Present ... Future?, MICROSCOPY AND MICROANALYSIS, Vol: 15, Pages: 10-11, ISSN: 1431-9276
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- Citations: 8
Yeh CY, Lai WC, Hsueh TH, et al., 2009, Light Output Improvement of Oxide-Textured InGaN-Based Light-Emitting Diodes by Bias-Assisted Photoelectrochemical Oxidation With Imprint Technique, IEEE PHOTONICS TECHNOLOGY LETTERS, Vol: 21, Pages: 718-720, ISSN: 1041-1135
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- Citations: 5
Moody MP, Gault B, Stephenson LT, et al., 2009, Qualification of the tomographic reconstruction in atom probe by advanced spatial distribution map techniques, ULTRAMICROSCOPY, Vol: 109, Pages: 815-824, ISSN: 0304-3991
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- Citations: 115
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