Imperial College London
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ProfessorBaptisteGault

Faculty of Engineering, Department of Materials

Professor of Atomic-Scale Characterization
 
 
 
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Contact

 

b.gault

 
 
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Location

 

Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Schwarz:2019:10.1103/PhysRevMaterials.3.035402,
author = {Schwarz, T and Redinger, A and Siebentritt, S and Peng, Z and Gault, B and Raabe, D and Choi, PP},
doi = {10.1103/PhysRevMaterials.3.035402},
journal = {Physical Review Materials},
title = {Variable chemical decoration of extended defects in Cu-poor C u2ZnSnS e4 thin films},
url = {http://dx.doi.org/10.1103/PhysRevMaterials.3.035402},
volume = {3},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - © 2019 American Physical Society. We report on atom probe tomography studies of variable chemical decorations at extended defects in Cu-poor and Zn-rich Cu2ZnSnSe4 thin films. For a precursor film, which was co-evaporated at 320C, grain boundaries and dislocations are found enriched with Cu. Furthermore, Na out-diffusion from the soda-lime glass substrate occurs even at such a low temperature, resulting in Na segregation at defects. In contrast, stacking faults in the precursor film show clear Zn enrichment as well as Cu and Sn depletion. After an annealing step at 500C, we detect changes in the chemical composition of grain boundaries as compared to the precursor. Moreover, we measure an increase in the grain boundary excess of Na by one order of magnitude. We show that grain boundaries and dislocations in the annealed Cu2ZnSnSe4 film exhibit no or only slight variations in composition of the matrix elements. Thus, the effect of annealing is a homogenization of the chemical composition.
AU  - Schwarz,T
AU  - Redinger,A
AU  - Siebentritt,S
AU  - Peng,Z
AU  - Gault,B
AU  - Raabe,D
AU  - Choi,PP
DO  - 10.1103/PhysRevMaterials.3.035402
PY  - 2019///
TI  - Variable chemical decoration of extended defects in Cu-poor C u2ZnSnS e4 thin films
T2  - Physical Review Materials
UR  - http://dx.doi.org/10.1103/PhysRevMaterials.3.035402
VL  - 3
ER  -
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