Imperial College London
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ProfessorChristopherGourlay

Faculty of Engineering, Department of Materials

Professor of Physical Metallurgy
 
 
 
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Contact

 

+44 (0)20 7594 8707c.gourlay

 
 
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Location

 

301DBessemer BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@inproceedings{Belyakov:2017:10.23919/ICEP.2017.7939364,
author = {Belyakov, SA and Nishimura, T and Akaiwa, T and Sweatman, K and Gourlay, CM},
doi = {10.23919/ICEP.2017.7939364},
pages = {232--236},
publisher = {IEEE},
title = {Role of Bi in microstructure formation of Sn-Cu-Ni based BGAs on Cu metallizations},
url = {http://dx.doi.org/10.23919/ICEP.2017.7939364},
year = {2017}
}
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RIS format (EndNote, RefMan)

TY  - CPAPER
AB  - There is ongoing research seeking solders with improved performance under harsh environmental conditions, elevated operation temperatures, and higher mechanical loads while, at the same time, meeting new emerging requirements for the continuous miniaturization of electronics. Bi has been identified as one of the advantageous alloying elements that significantly improve solder performance. The present investigation explores the influence of Bi on microstructure formation in Sn-Cu-Ni-Bi/Cu joints containing 0-14 wt% Bi. It is shown that Bi additions have no catalytic effect on βSn nucleation, however, they alter βSn growth textures in Sn-Cu-Ni-Bi/Cu joints causing a transition from a columnar grain growth to a virtually single grain structures as the Bi content increases above 8wt%. Bi additions are demonstrated to reduce the thickness of the Cu6Sn5 IMC layer and to cause formation of non-equilibrium grain boundary βSn + (Cu, Ni)6Sn5 + (Bi) eutectic in joints with Bi contents ≥2wt% Bi.
AU  - Belyakov,SA
AU  - Nishimura,T
AU  - Akaiwa,T
AU  - Sweatman,K
AU  - Gourlay,CM
DO  - 10.23919/ICEP.2017.7939364
EP  - 236
PB  - IEEE
PY  - 2017///
SP  - 232
TI  - Role of Bi in microstructure formation of Sn-Cu-Ni based BGAs on Cu metallizations
UR  - http://dx.doi.org/10.23919/ICEP.2017.7939364
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000403391900054&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/57362
ER  -
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