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BibTex format

@article{Serb:2016:10.1109/TCSI.2015.2476296,
author = {Serb, A and Redman-White, W and Papavassiliou, C and Prodromakis, T},
doi = {10.1109/TCSI.2015.2476296},
journal = {IEEE Transactions on Circuits and Systems Part 1: Regular Papers},
pages = {827--835},
title = {Practical determination of individual element resistive states in selectorless RRAM arrays},
url = {http://dx.doi.org/10.1109/TCSI.2015.2476296},
volume = {63},
year = {2016}
}

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TY  - JOUR
AB  - Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-point resistance on the basis of multiple measurements. Results indicate that the standard method performs as well as or better than its competitors. SPICE simulations are then performed with controlled amounts of non-idealities introduced in the system in order to test whether any technique offers particular resilience against typical practical imperfections such as crossbar line resistance. We conclude that even though certain non-idealities are shown to be minimized by different circuit-level read-out strategies, line resistance within the crossbar remains an outstanding challenge.
AU  - Serb,A
AU  - Redman-White,W
AU  - Papavassiliou,C
AU  - Prodromakis,T
DO  - 10.1109/TCSI.2015.2476296
EP  - 835
PY  - 2016///
SN  - 1549-8328
SP  - 827
TI  - Practical determination of individual element resistive states in selectorless RRAM arrays
T2  - IEEE Transactions on Circuits and Systems Part 1: Regular Papers
UR  - http://dx.doi.org/10.1109/TCSI.2015.2476296
UR  - https://ieeexplore.ieee.org/document/7312507
UR  - http://hdl.handle.net/10044/1/39069
VL  - 63
ER  -

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Dr Christos Papavassiliou

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