Imperial College London
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Professor Camille Petit

Faculty of Engineering, Department of Chemical Engineering

Professor of Materials Engineering
 
 
 
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Contact

 

camille.petit Website

 
 
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Location

 

506ACE ExtensionSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Schukraft:2022:10.1021/acsami.2c00335,
author = {Schukraft, GEM and Moss, B and Kafizas, AG and Petit, C},
doi = {10.1021/acsami.2c00335},
journal = {ACS Applied Materials and Interfaces},
pages = {19342--19352},
title = {Effect of band bending in photoactive MOF-based heterojunctions.},
url = {http://dx.doi.org/10.1021/acsami.2c00335},
volume = {14},
year = {2022}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Semiconductor/metal-organic framework (MOF) heterojunctions have demonstrated promising performance for the photoconversion of CO2 into value-added chemicals. To further improve performance, we must understand better the factors which govern charge transfer across the heterojunction interface. However, the effects of interfacial electric fields, which can drive or hinder electron flow, are not commonly investigated in MOF-based heterojunctions. In this study, we highlight the importance of interfacial band bending using two carbon nitride/MOF heterojunctions with either Co-ZIF-L or Ti-MIL-125-NH2. Direct measurement of the electronic structures using X-ray photoelectron spectroscopy (XPS), work function, valence band, and band gap measurements led to the construction of a simple band model at the heterojunction interface. This model, based on the heterojunction components and band bending, enabled us to rationalize the photocatalytic enhancements and losses observed in MOF-based heterojunctions. Using the insight gained from a promising band bending diagram, we developed a Type II carbon nitride/MOF heterojunction with a 2-fold enhanced CO2 photoreduction activity compared to the physical mixture.
AU  - Schukraft,GEM
AU  - Moss,B
AU  - Kafizas,AG
AU  - Petit,C
DO  - 10.1021/acsami.2c00335
EP  - 19352
PY  - 2022///
SN  - 1944-8244
SP  - 19342
TI  - Effect of band bending in photoactive MOF-based heterojunctions.
T2  - ACS Applied Materials and Interfaces
UR  - http://dx.doi.org/10.1021/acsami.2c00335
UR  - https://www.ncbi.nlm.nih.gov/pubmed/35442614
UR  - https://pubs.acs.org/doi/10.1021/acsami.2c00335
UR  - http://hdl.handle.net/10044/1/96904
VL  - 14
ER  -
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