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BibTex format

@inproceedings{MacKenzie:2006:10.1149/1.2355707,
author = {MacKenzie, M and Craven, AJ and McComb, DW and De, Gendt S and Docherty, FT and McGilvery, CM and McFadzean, S},
doi = {10.1149/1.2355707},
pages = {153--158},
title = {Advanced nano-analysis of a high-k dielectric stack},
url = {http://dx.doi.org/10.1149/1.2355707},
year = {2006}
}

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TY  - CPAPER
AB  - Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO 2/TiN/a-Si gate stack prior to activation show evidence of interface reactions having occurred with the formation of an oxide layer at the TiN/a-Si interface. copyright The Electrochemical Society.
AU  - MacKenzie,M
AU  - Craven,AJ
AU  - McComb,DW
AU  - De,Gendt S
AU  - Docherty,FT
AU  - McGilvery,CM
AU  - McFadzean,S
DO  - 10.1149/1.2355707
EP  - 158
PY  - 2006///
SN  - 1938-5862
SP  - 153
TI  - Advanced nano-analysis of a high-k dielectric stack
UR  - http://dx.doi.org/10.1149/1.2355707
ER  -

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Dr Catriona M. McGilvery

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