Imperial College London

Prof. Chris Phillips

Faculty of Natural SciencesDepartment of Physics

Professor of Experimental Solid State Physics
 
 
 
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Contact

 

+44 (0)20 7594 7575chris.phillips

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

911Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

233 results found

Phillips CC, 1996, C C Phillips“Solid State Infra-Red Emitters For The 2-10 m Band Based On InAs Low Dimensional Semiconductors. “ EPSRC Research Grant Report GR/J 37782 (March 1996) SERC Graded as category Alpha 4 (Scientific Merit), “Excellent” (Use of Resources)

Report

Thucydides G, Barnes JM, Tsui E, Barnham KWJ, Phillips CC, Cheng TS, Foxon CTet al., 1996, Picosecond photoluminescence studies of carrier escape processes in a GaAs/Al0.3Ga0.7As single quantum well, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 11, Pages: 331-339, ISSN: 0268-1242

Journal article

Vodopyanov KL, Phillips CC, 1996, Mid-IR non-linear spectroscopy of low-dimensional semiconductor structures using an OPG, Nonlinear Optics of Low-Dimensional Structures and New Materials - Icono '95, Vol: 2801, Pages: 11-18

Journal article

VAGHJIANI HL, PHILLIPS CC, JOHNSON EA, STRADLING RA, KANE MJet al., 1995, AN EXPERIMENTAL AND THEORETICAL-STUDY OF INTERSUBBAND TRANSITIONS IN INSB AND INAS ASYMMETRIC DOPING SUPERLATTICES, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 10, Pages: 1103-1107, ISSN: 0268-1242

Journal article

TANG PJP, PULLIN MJ, CHUNG SJ, PHILLIPS CC, STRADLING RA, NORMAN AG, LI YB, HART Let al., 1995, 4-11 MU-M INFRARED-EMISSION AND 300 K LIGHT-EMITTING-DIODES FROM ARSENIC-RICH INAS1-XSBX STRAINED-LAYER SUPERLATTICES, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 10, Pages: 1177-1180, ISSN: 0268-1242

Journal article

Chazapis V, Blom H A, Vodopyanov K L, Norman A G, Phillips C Cet al., 1995, Midiinfrared picosecond spectroscopy studies of auger recombination in INSB, PHYS REV

Journal article

CHAZAPIS V, BLOM HA, VODOPYANOV KL, NORMAN AG, PHILLIPS CCet al., 1995, MIDINFRARED PICOSECOND SPECTROSCOPY STUDIES OF AUGER RECOMBINATION IN INSB, PHYSICAL REVIEW B, Vol: 52, Pages: 2516-2521, ISSN: 0163-1829

Journal article

PARKER TR, PHILLIPS CC, MAY PG, 1995, ELECTRICALLY GATED FIELD-ASSISTED PHOTOEMISSION FROM CAESIATED METAL (ALGA)AS HETEROSTRUCTURES, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 10, Pages: 547-550, ISSN: 0268-1242

Journal article

TANG PJP, PULLIN MJ, PHILLIPS CC, STRADLING RAet al., 1995, PHOTOLUMINESCENCE STUDIES OF N-I-P-I SUPERLATTICES IN INSB AND INAS - SUPPRESSION OF AUGER RECOMBINATION DUE TO TYPE-II POTENTIALS, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 10, Pages: 476-482, ISSN: 0268-1242

Journal article

PARKER TR, PHILLIPS CC, MAY PG, 1995, ALXGA1-XAS AS INTERVALLEY SCATTERING RATES FROM FIELD-ASSISTED PHOTOEMISSION SPECTROSCOPY, PHYSICAL REVIEW B, Vol: 51, Pages: 4264-4271, ISSN: 0163-1829

Journal article

Pullin MJ, Tang PJP, Chung SJ, Phillips CC, Stradling RA, Norman AG, Li YB, Hart Let al., 1995, 300K light emitting devices for the 3-10 mu m band from arsenic rich InAs/InAs1-xSbx strained layer superlattices, 7th International Conference on Narrow Gap Semiconductors, Publisher: IOP PUBLISHING LTD, Pages: 8-12, ISSN: 0951-3248

Conference paper

Tang PJP, Pullin MJ, Chung SJ, Phillips CC, Stradling RA, Norman AG, Li YB, Hart Let al., 1995, Photo-luminescence and electro-luminescence studies of uncooled arsenic rich in (As,sb) Strained layer superlattice light emitting diodes for the 4-12 mu m band, Optoelectronic Integrated Circuit Materials, Physics, and Devices, Vol: 2397, Pages: 389-398

Journal article

Murdin BN, Pidgeon CR, Jaroszynski DA, Phillips CC, Stradling RA, Ciesla CM, Praseres R, Langerak CJGMet al., 1995, Picosecond free electron laser studies recombination in InSb and InAsSb systems, 7th International Conference on Narrow Gap Semiconductors, Publisher: IOP PUBLISHING LTD, Pages: 267-271, ISSN: 0951-3248

Conference paper

VODOPYANOV KL, PHILLIPS CC, 1995, TRAVELLING WAVE MID-IR ZNGEP2 AND GASE OPTICAL PARAMETRIC GENERATORS AND THEIR SPECTROSCOPIC APPLICATIONS, Conference on Solid State Lasers and Nonlinear Crystals, at Photonics West 95, Publisher: SPIE - INT SOC OPTICAL ENGINEERING, Pages: 170-174

Conference paper

Vodopyanov KL, Phillips CC, 1995, Travelling wave mid-ir zngep2 and gase optical parametric generators and their spectroscopic applications, Solid State Lasers and Nonlinear Crystals, Vol: 2379, Pages: 170-174

Journal article

TANG PJP, PULLIN MJ, CHUNG SJ, PHILLIPS CC, STRADLING RA, NORMAN AG, LI YB, HART Let al., 1995, PHOTO-LUMINESCENCE AND ELECTRO-LUMINESCENCE STUDIES OF UNCOOLED ARSENIC RICH IN (AS,SB) STRAINED LAYER SUPERLATTICE LIGHT EMITTING DIODES FOR THE 4-12 mu M BAND, Conference on Optoelectronic Integrated Circuit Materials, Physics, and Devices, Publisher: SPIE - INT SOC OPTICAL ENGINEERING, Pages: 389-398

Conference paper

PARKER T R, FAWCETT A H, PHILLIPS C C, MAJUMDAR S, FAWCETT P Net al., 1994, GATABLE ULTRAFAST FIELD-ASSISTED PHOTOEMISSION TO LAMBDA=1.55 MU-M FROM IN0.5GGA0.5AS HETEROSTRUCTURES, APPL PHYS LETTER

Journal article

Vaghjiani H L, Johnson E A, Kane M J, Grey R, Phillips C Cet al., 1994, GAAS Asymmetrically Doped N-I-P-I-Superlattices for 10-MU-M Infrared Subband Detector and Modulator Applications, J APPL PHYSICS

Journal article

VAGHJIANI HL, JOHNSON EA, KANE MJ, GREY R, PHILLIPS CCet al., 1994, GAAS ASYMMETRICALLY DOPED N-I-P-I-SUPERLATTICES FOR 10-MU-M INFRARED SUBBAND DETECTOR AND MODULATOR APPLICATIONS, JOURNAL OF APPLIED PHYSICS, Vol: 76, Pages: 4407-4412, ISSN: 0021-8979

Journal article

William, G V M, Phillips C C, Woodbridge Ket al., 1994, Time-Resolved DFWM, Excite Probe and Transient Grating Stidies of INXGA1-XAS GAAS Superlatticces, Semiconductor Sci Tech

Journal article

Poole P J, Phillips C C, Roberts C, Paxman Met al., 1994, Experimental and Theoretical Studies of A Nove Hetero_Nipi Reflection Modulator, IEEE

Journal article

POOLE PJ, PHILLIPS CC, ROBERTS C, PAXMAN Met al., 1994, EXPERIMENTAL AND THEORETICAL-STUDIES OF A NOVEL HETERO-NIPI REFLECTION MODULATOR, IEEE JOURNAL OF QUANTUM ELECTRONICS, Vol: 30, Pages: 1027-1035, ISSN: 0018-9197

Journal article

LE T, NORMAN AG, YUEN WT, HART L, FERGUSON IT, HARRIS JJ, PHILLIPS CC, STRADLING RAet al., 1994, QUANTUM TRANSPORT IN INAS1-XSBX/INSB STRAINED-LAYER SUPERLATTICES, 10th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-10), Publisher: ELSEVIER SCIENCE BV, Pages: 337-342, ISSN: 0039-6028

Conference paper

Le T, Norman AG, Yuen WT, Hart L, Ferguson IT, Harris JJ, Phillips CC, Stradling RAet al., 1994, Quantum transport in inas1-xsbx/insb strained-layer superlattices, Surface Science, Vol: 305, Pages: 337-342, ISSN: 0039-6028

Journal article

PHILLIPS CC, VAGHJIANI HL, JOHNSON EA, TANG PJP, STRADLING RA, HARRIS JJ, KANE MJet al., 1994, OBSERVATION OF INTERSUBBAND TRANSITIONS IN ASYMMETRIC delta-DOPED GAAS, INSB AND INAS STRUCTURES, NATO Advanced Research Workshop on Quantum Well Intersubband Transition Physics and Devices, Publisher: KLUWER ACADEMIC PUBL, Pages: 371-378, ISSN: 0168-132X

Conference paper

Phillips CC, Vaghjiani HL, Johnson EA, Tang PJP, Stradling RA, Harris JJ, Kane MJet al., 1994, Observation of intersubband transitions in asymmetric delta-doped gaas, insb and inas structures, Quantum Well Intersubband Transition Physics and Devices, Vol: 270, Pages: 371-378, ISSN: 0168-132X

Journal article

TANG PJP, PHILLIPS CC, STRADLING RA, 1993, EXCITONIC PHOTOLUMINESCENCE IN HIGH-PURITY INAS MBE EPILAYERS ON GAAS SUBSTRATES, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 8, Pages: 2135-2142, ISSN: 0268-1242

Journal article

Poole PJ, Phillips CC, Henini M, Hughes OHet al., 1993, All-optical measurement of the giant ambipolar diffusion constant in a hetero-nipi reflection modulator, Engineering optics, Vol: 6, Pages: 493-497, ISSN: 0952-8911

We have measured the in-plane ambipolar diffusion constant in a hetero-nipi reflection modulator using a novel all-optical technique. This technique allows us to monitor the time evolution of an excess carrier population at any point on the sample without the need for electrical contacts. The diffusion is found to be enhanced by almost an order to magnitude over that in bulk material (to values of 45 cm2 s-1) due to the 'giant ambipolar diffusion' mechanism arising from perturbations to the periodic nipi potential. This has important implications in the use of nipi structures as fast optical switching elements as it ensures uniform switching across an individual pixel in a device where the in-plane diffusion dynamics are typically the limiting factor in the switching speed.

Journal article

Phillips CC, 1993, C C Phillips.SERC Final Research Report for GR/F51586 "Novel Photodetectors for Infrared Wavelengths Based on Spike-Doped Semiconductors" (Nov. 1993)

Report

FAWCETT AH, PHILLIPS CC, MAY PG, 1993, DIRECT MEASUREMENT OF HOT-ELECTRON ENERGY-DISTRIBUTIONS IN AL0.35GA0.65AS FIELD-ASSISTED PHOTOCATHODES, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 8, Pages: 1803-1809, ISSN: 0268-1242

Journal article

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