Imperial College London
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DrDiegoAlonso Alvarez

Central Faculty, Information & Communication Technologies

Head of Research Software Engineering
 
 
 
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Contact

 

+44 (0)20 7594 9491d.alonso-alvarez Website

 
 
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Location

 

Sherfield BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Donchev:2017:1/012013,
author = {Donchev, V and Asenova, I and Milanova, M and Alonso, Alvarez D and Kirilov, K and Shtinkov, N and Ivanov, IG and Georgiev, S and Valcheva, E and Ekins-Daukes, N},
doi = {1/012013},
journal = {Journal of Physics: Conference Series},
title = {Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy},
url = {http://dx.doi.org/10.1088/1742-6596/794/1/012013},
volume = {794},
year = {2017}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We present an experimental and theoretical study of GaInAs(Sb)N layers withthickness around 2 μm, grown by liquid-phase epitaxy (LPE) on n-type GaAs substrates. Thesamples are studied by surface photovoltage (SPV) spectroscopy and by photoluminescencespectroscopy. A theoretical model for the band structure of Sb-containing dilute nitrides isdeveloped within the semi-empirical tight-binding approach in the sp3d5ssN parameterisationand is used to calculate the electronic structure for different alloy compositions. The SPVspectra measured at room temperature clearly show a red shift of the absorption edge withrespect to the absorption of the GaAs substrate. The shifts are in agreement with theoreticalcalculations results obtained for In, Sb and N concentrations corresponding to theexperimentally determined ones. Photoluminescence measurements performed at 300K and 2 Kshow a smaller red shift of the emission energy with respect to GaAs as compared to the SPVresults. The differences are explained by a tail of slow defect states below the conduction bandedge, which are probed by SPV, but are less active in the PL experiment.
AU  - Donchev,V
AU  - Asenova,I
AU  - Milanova,M
AU  - Alonso,Alvarez D
AU  - Kirilov,K
AU  - Shtinkov,N
AU  - Ivanov,IG
AU  - Georgiev,S
AU  - Valcheva,E
AU  - Ekins-Daukes,N
DO  - 1/012013
PY  - 2017///
SN  - 1742-6588
TI  - Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
T2  - Journal of Physics: Conference Series
UR  - http://dx.doi.org/10.1088/1742-6596/794/1/012013
UR  - http://hdl.handle.net/10044/1/40213
VL  - 794
ER  -
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