Imperial College London
Portrait Picture

DrDiegoAlonso Alvarez

Central Faculty, Information & Communication Technologies

Head of Research Software Engineering
 
 
 
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Contact

 

+44 (0)20 7594 9491d.alonso-alvarez Website

 
 
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Location

 

Sherfield BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Donchev:2017:10.1016/j.jcrysgro.2017.11.023,
author = {Donchev, V and Milanova, M and Asenova, I and Shtinkov, N and Alonso-Alvarez, D and Mellor, A and Karmakov, Y and Georgiev, S and Ekins-Daukes, N},
doi = {10.1016/j.jcrysgro.2017.11.023},
journal = {Journal of Crystal Growth},
pages = {140--146},
title = {Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy},
url = {http://dx.doi.org/10.1016/j.jcrysgro.2017.11.023},
volume = {483},
year = {2017}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsSbN layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.
AU  - Donchev,V
AU  - Milanova,M
AU  - Asenova,I
AU  - Shtinkov,N
AU  - Alonso-Alvarez,D
AU  - Mellor,A
AU  - Karmakov,Y
AU  - Georgiev,S
AU  - Ekins-Daukes,N
DO  - 10.1016/j.jcrysgro.2017.11.023
EP  - 146
PY  - 2017///
SN  - 0022-0248
SP  - 140
TI  - Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
T2  - Journal of Crystal Growth
UR  - http://dx.doi.org/10.1016/j.jcrysgro.2017.11.023
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000419025800020&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/57337
VL  - 483
ER  -
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