Imperial College London
Portrait Picture

DrDiegoAlonso Alvarez

Central Faculty, Information & Communication Technologies

Head of Research Software Engineering
 
 
 
//

Contact

 

+44 (0)20 7594 9491d.alonso-alvarez Website

 
 
//

Location

 

Sherfield BuildingSouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{Wilson:2018:10.1038/s41598-018-24696-2,
author = {Wilson, T and Hylton, NP and Harada, Y and Pearce, PM and Alonso-Alvarez, D and Mellor, A and Richards, RD and David, JP and Ekins-Daukes, NJ},
doi = {10.1038/s41598-018-24696-2},
journal = {Scientific Reports},
title = {Assessing the nature of the distribution of localised states in bulk GaAsBi},
url = {http://dx.doi.org/10.1038/s41598-018-24696-2},
volume = {8},
year = {2018}
}
Download

RIS format (EndNote, RefMan)

TY  - JOUR
AB  - A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk GaAsBi is presented usingpower and temperature dependent photoluminescence spectroscopy. The observation of a characteristic red-blue-red shift inthe peak luminescence energy indicates the presence of short-range alloy disorder in the material. A decrease in the carrierlocalisation energy demonstrates the strong excitation power dependence of localised state behaviour and is attributed to thefilling of energy states furthest from the valence band edge. Analysis of the photoluminescence lineshape at low temperaturepresents strong evidence for a Gaussian distribution of localised states that extends from the valence band edge. Furthermore,a rate model is employed to understand the non-uniform thermal quenching of the photoluminescence and indicates thepresence of two Gaussian-like distributions making up the density of localised states. These components are attributed to thepresence of microscopic fluctuations in Bi content, due to short-range alloy disorder across the GaAsBi layer, and the formationof Bi related point defects, resulting from low temperature growth.
AU  - Wilson,T
AU  - Hylton,NP
AU  - Harada,Y
AU  - Pearce,PM
AU  - Alonso-Alvarez,D
AU  - Mellor,A
AU  - Richards,RD
AU  - David,JP
AU  - Ekins-Daukes,NJ
DO  - 10.1038/s41598-018-24696-2
PY  - 2018///
SN  - 2045-2322
TI  - Assessing the nature of the distribution of localised states in bulk GaAsBi
T2  - Scientific Reports
UR  - http://dx.doi.org/10.1038/s41598-018-24696-2
UR  - http://hdl.handle.net/10044/1/58623
VL  - 8
ER  -
Download