Imperial College London
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Professor David W. McComb

Faculty of Engineering, Department of Materials

Adjunct Professor
 
 
 
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Contact

 

+44 (0)20 7594 6750d.mccomb Website

 
 
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Location

 

Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Hettiaratchy:2020:10.1116/6.0000612,
author = {Hettiaratchy, EC and Jamison, JS and Wang, B and Bagués, N and Guest, RA and Mccomb, DW and Myers, RC},
doi = {10.1116/6.0000612},
journal = {Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films},
title = {Interface-induced ferromagnetism in μ-Fe<inf>2</inf>O<inf>3</inf>/β-Ga<inf>2</inf>O<inf>3</inf>superlattices},
url = {http://dx.doi.org/10.1116/6.0000612},
volume = {38},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Superlattices of antiferromagnetic μ-Fe2O3 and diamagnetic β-Ga2O3 are grown by plasma-assisted molecular beam epitaxy on (010) oriented β-Ga2O3 substrates in which ferromagnetism emerges above room temperature. To investigate the suspected interface origin of the ferromagnetic phase, identical superlattice structures are grown at various substrate temperatures and beam fluxes. Atomic-resolution scanning transmission electron microscopy images confirm the registry of μ-Fe2O3 to the β-Ga2O3 layers in these superlattices. Atomic force microscopy and high-resolution x-ray diffraction are used to examine the growth morphology and characterize the superlattice interface roughness. The saturation magnetization of the ferromagnetic phase is observed to increase strongly with the interface roughness. Conversely, smoother superlattices exhibit a weaker ferromagnetic response and a higher density of paramagnetic moments along with evidence of superparamagnetic clusters. These findings are consistent with the interface origin for the ferromagnetic response in these superlattices. The demonstration of an interface magnetic phase in nearly lattice-matched monoclinic Fe2O3/Ga2O3 opens the door to ultrawide bandgap heterostructure-engineered magnetoelectronic devices, where ferromagnetic switching of the interface phase can be incorporated into high-field devices.
AU  - Hettiaratchy,EC
AU  - Jamison,JS
AU  - Wang,B
AU  - Bagués,N
AU  - Guest,RA
AU  - Mccomb,DW
AU  - Myers,RC
DO  - 10.1116/6.0000612
PY  - 2020///
SN  - 0734-2101
TI  - Interface-induced ferromagnetism in μ-Fe<inf>2</inf>O<inf>3</inf>/β-Ga<inf>2</inf>O<inf>3</inf>superlattices
T2  - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
UR  - http://dx.doi.org/10.1116/6.0000612
VL  - 38
ER  -
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