Imperial College London
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DrDhruvSaxena

Faculty of Natural Sciences, Department of Physics

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816Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Zhang:2019:10.1021/acsnano.9b01775,
author = {Zhang, Y and Davis, G and Fonseka, HA and Velichko, A and Gustafsson, A and Godde, T and Saxena, D and Aagesen, M and Parkinson, PW and Gott, JA and Huo, S and Sanchez, AM and Mowbray, DJ and Liu, H},
doi = {10.1021/acsnano.9b01775},
journal = {ACS Nano},
pages = {5931--5938},
title = {Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.},
url = {http://dx.doi.org/10.1021/acsnano.9b01775},
volume = {13},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures ( e. g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.
AU  - Zhang,Y
AU  - Davis,G
AU  - Fonseka,HA
AU  - Velichko,A
AU  - Gustafsson,A
AU  - Godde,T
AU  - Saxena,D
AU  - Aagesen,M
AU  - Parkinson,PW
AU  - Gott,JA
AU  - Huo,S
AU  - Sanchez,AM
AU  - Mowbray,DJ
AU  - Liu,H
DO  - 10.1021/acsnano.9b01775
EP  - 5938
PY  - 2019///
SP  - 5931
TI  - Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.
T2  - ACS Nano
UR  - http://dx.doi.org/10.1021/acsnano.9b01775
UR  - https://www.ncbi.nlm.nih.gov/pubmed/31067033
VL  - 13
ER  -
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