Publications
240 results found
Haselwandter CA, Vvedensky DD, 2006, Stochastic equation for the morphological evolution of heteroepitaxial thin films, Physical Review B, Vol: 74
A stochastic partial differential equation for the morphological evolution of strained epitaxial films is derived from atomistic aggregation kinetics. The transition rules and rates are based on a model that incorporates the effects of strain through environment-dependent energy barriers to adatom detachment. Comparisons with previous approaches based on continuum elasticity provide an atomistic interpretation of the governing equation for heteroepitaxial thin films.
VVEDENSKY DD, CRAMPIN S, EBERHART ME, et al., 2006, QUANTUM-MECHANICS AND MECHANICAL-PROPERTIES - TOWARDS 21ST-CENTURY MATERIALS, CONTEMPORARY PHYSICS, Vol: 31, Pages: 73-97, ISSN: 0010-7514
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- Citations: 7
Volta AD, Vvedensky DD, Gogneau N, et al., 2006, Step ordering induced by nonplanar patterning of GaAs surfaces, Applied Physics Letters, Vol: 88, ISSN: 0003-6951
We report the observation and theory of the morphological evolution of vicinal (001) ridges on V-grooved GaAs surfaces during metal organic vapor-phase epitaxy. The pattern of the nonplanar substrate induces unusual ordering of monatomic steps, different from the free step flow observed on a nonpatterned vicinal surface. The step edges develop profiles that kinetic Monte Carlo simulations reveal are determined by the width of the ridges between neighboring V grooves and the kinetics of interfacet mass migration between the ridge and the bounding sidewalls of the V groove.
Haselwandter CA, Vvedensky DD, 2006, Scaling of ballistic deposition from a Langevin equation, Physical Review E, Vol: 73, ISSN: 1539-3755
An exact lattice Langevin equation is derived for the ballistic deposition model of surface growth. The continuum limit of this equation is dominated by the Kardar-Parisi-Zhang (KPZ) equation at all length and time scales. For a one-dimensional substrate the solution of the exact lattice Langevin equation yields the KPZ scaling exponents without any extrapolation. For a two-dimensional substrate the scaling exponents are different from those found from computer simulations. This discrepancy is discussed in relation to analytic approaches to the KPZ equation in higher dimensions.
Chua ALS, Haselwandter CA, Baggio C, et al., 2005, Langevin equations for fluctuating surfaces., Physical Review E, Vol: 72, ISSN: 1539-3755
Exact Langevin equations are derived for the height fluctuations of surfaces driven by the deposition of material from a molecular beam. We consider two types of model: deposition models, where growth proceeds by the deposition and instantaneous local relaxation of particles, with no subsequent movement, and models with concurrent random deposition and surface diffusion. Starting from a Chapman-Kolmogorov equation the deposition, relaxation, and hopping rules of these models are first expressed as transition rates within a master equation for the joint height probability density function. The Kramers-Moyal-van Kampen expansion of the master equation in terms of an appropriate "largeness" parameter yields, according to a limit theorem due to Kurtz [Stoch. Proc. Appl. 6, 223 (1978)], a Fokker-Planck equation that embodies the statistical properties of the original lattice model. The statistical equivalence of this Fokker-Planck equation, solved in terms of the associated Langevin equation, and solutions of the Chapman-Kolmogorov equation, as determined by kinetic Monte Carlo (KMC) simulations of the lattice transition rules, is demonstrated by comparing the surface roughness and the lateral height correlations obtained from the two formulations for the Edwards-Wilkinson [Proc. R. Soc. London Ser. A 381, 17 (1982)] and Wolf-Villain [Europhys. Lett. 13, 389 (1990)] deposition models, and for a model with random deposition and surface diffusion. In each case, as the largeness parameter is increased, the Langevin equation converges to the surface roughness and lateral height correlations produced by KMC simulations for all times, including the crossover between different scaling regimes. We conclude by examining some of the wider implications of these results, including applications to heteroepitaxial systems and the passage to the continuum limit.
Vvedensky DD, 2005, Stochastic equations for thin-film morphology, Handbook of materials modeling, volume 1: methods and models, Dordrecht, Publisher: Springer, Pages: 2351-2361, ISBN: 9781402032875
Haselwandter CA, Vvedensky DD, 2005, From atomistic to continuum descriptions of morphological evolution, Pittsburgh, PA, Modeling of morphological evolution at surfaces and interfaces, Publisher: Materials Research Society, Pages: JJ8-JJ8
Erbudak M, Vvedensky DD, 2005, Inelastic electron scattering, Encyclopedia of condensed matter physics, Editors: Bassani, Liedl, Wyder, Oxford, Publisher: Elsevier, Pages: 205-211, ISBN: 9780122276101
Kotria M, Papanicolaou NI, Vvedensky DD, et al., 2005, Atomistic aspects of epitaxial growth, proceedings of the NATO advanced research workshop, held in Dasia, Corfu, Greece, 25 - 30 June, 2001, Publisher: Springer, ISBN: 9781402006746
Joyce BA, Vvedensky DD, 2005, Quantum dots in the InAs--GaAs system: an overview of their formation (Invited), Dordrecht, Quantum dots: fundamentals, applications, and frontiers, proceedings of the NATO ARW on quantum dots: fundamentals, applications and frontiers, Ammoudara, Crete, Greece, 20 - 24 July 2003, Publisher: Springer, Pages: 1-26
Joyce BA, Kelires PC, Naumovets AG, et al., 2005, Quantum dots: fundamentals, applications, and frontiers, proceedings of the NATO ARW on quantum dots: fundamentals, applications and frontiers, Ammoudara, Crete, Greece, 20 - 24 July 2003, Publisher: Springer, ISBN: 9781402033131
Joyce BA, Vvedensky DD, 2005, Quantum dots in the InAs/GaAs system - An overview of their formation, NATO Advanced Research Workshop on Quantum Dots - Fundamentals, Applications, and Frontieres, Publisher: SPRINGER, Pages: 1-26, ISSN: 1568-2609
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- Citations: 3
Vvedensky DD, 2004, Multiscale modelling of nanostructures, JOURNAL OF PHYSICS-CONDENSED MATTER, Vol: 16, Pages: R1537-R1576, ISSN: 0953-8984
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- Citations: 89
Joyce BA, Vvedensky DD, 2004, Self-organized growth on GaAs surfaces, MAT SCI ENG R, Vol: 46, Pages: 127-176, ISSN: 0927-796X
GaAs(001) has been one of the most intensively studied surfaces for the past 30 years due both to its importance as a substrate for epitaxial growth and to the challenge its phase diagram of complex structures presents to computational methods. Yet despite substantial experimental and theoretical effort, a number of fundamental questions remain concerning growth kinetics and mechanisms on this surface, even for homoepitaxy, but more especially in the formation of heterostructures. These issues have acquired a renewed timeliness because the quantum dots that are formed during the Stranski-Krastanov (SK) growth of InAs on GaAs(001) can be used for optoelectronic applications and have potential in quantum dot-based architectures for quantum computing. In this review we survey the current state of understanding of growth kinetics on GaAs surfaces, beginning with the simplest case, homoepitaxy on GaAs(001). We compare interpretations of recent reflection high energy electron diffraction measurements taken during the initial stages of growth with predictions of ab initio density functional calculations. We also consider the extent to which snapshot scanning tunnelling microscopy images from rapidly quenched samples truly reflect the growing surface structure as revealed by in situ real-time methods. We then examine the present experimental and theoretical status of the SK growth of InAs quantum dots on singular orientations of low-index GaAs surfaces, focussing on such issues as the importance of substrate orientation and surface reconstruction of the substrate, wetting layer formation, the nucleation kinetics of quantum dots, their size distributions and the role of strain. The systematics and anomalies of the phenomenology will be highlighted, as well as the current understanding of quantum dot formation. (C) 2004 Elsevier B.V. All rights reserved.
Vvedensky DD, 2003, Crossover and universality in the Wolf-Villain model, PHYSICAL REVIEW E, Vol: 68, ISSN: 1539-3755
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- Citations: 17
Vvedensky DD, Ratsch C, Gibou F, et al., 2003, Singularities and spatial fluctuations in submonolayer epitaxy, PHYSICAL REVIEW LETTERS, Vol: 90, ISSN: 0031-9007
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- Citations: 7
Schindler AC, Gyure MF, Simms GD, et al., 2003, Theory of strain relaxation in heteroepitaxial systems, PHYSICAL REVIEW B, Vol: 67, ISSN: 1098-0121
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- Citations: 25
Vvedensky DD, 2003, Edwards-Wilkinson equation from lattice transition rules, PHYSICAL REVIEW E, Vol: 67, ISSN: 1539-3755
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- Citations: 43
Vvedensky DD, Baggio C, Chua A, et al., 2003, Stochastic differential equations for Driven Lattice Systems, Providence R.I, International conference on scientific computing and partial differential equations, Hong Kong, Publisher: American Mathematical Society; 2003, Pages: 185-202
Haselwandter C, Vvedensky DD, 2002, Fluctuations in the lattice gas for Burgers' equation, JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, Vol: 35, Pages: L579-L584, ISSN: 0305-4470
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- Citations: 14
Ratsch C, Gyure MF, Caflisch RE, et al., 2002, Level-set method for island dynamics in epitaxial growth, PHYSICAL REVIEW B, Vol: 65, ISSN: 2469-9950
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- Citations: 73
Joyce BA, Vvedensky DD, 2002, Mechanisms and anomalies in the formation of InAa-GaAs(001) quantum dot structures, Dordrecht, NATO Advanced Research Workshop on atomistic aspects of epitaxial growth, Dassia, Greece, 25 - 30 June 2001, Publisher: Kluwer Academic, Pages: 301-325
Schindler AC, Vvedensky DD, Gyure MF, et al., 2002, Atomistic and continuum elastic effects in heteroepitaxial systems, Dordrecht, NATO Advanced Research Workshop on Atomistic Aspects of Epitaxial Growth, Dassia, Greece, 25 - 30 June 2001, Publisher: Kluwer Academic, Pages: 337-353
Baggio C, Vardavas R, Vvedensky DD, 2001, Fokker-Planck equation for lattice deposition models, PHYSICAL REVIEW E, Vol: 64, ISSN: 1539-3755
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- Citations: 12
Vvedensky DD, 2001, Epitaxial phenomena across length and time scales, SURFACE AND INTERFACE ANALYSIS, Vol: 31, Pages: 627-636, ISSN: 0142-2421
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- Citations: 4
Bolliger B, Erbudak M, Hensch A, et al., 2001, Pentepistemology of biological structures and quasicrystals (Invited), New York, Physics of low dimensional systems, Publisher: Kluwer Academic/Plenum Publishers, Pages: 257-264
Vvedensky DD, 2001, Epitaxial growth of semiconductors, Low-dimensional semiconductor structures: fundamentals and device applications, Editors: Barnham, Vvedensky, Barnham, Vvedensky, Cambridge, Publisher: Cambridge University Press, Pages: 1-55, ISBN: 9780521591034
Barnham K, Vvedensky DD, 2001, Low-dimensional semiconductor structures: fundamentals and device applications, Cambridge, Publisher: Cambridge University Press, ISBN: 9780521591034
Bolliger B, Erbudak M, Hensch A, et al., 2000, Surface structural phase transitions on icosahedral Al-Pd-Mn, 7th International Conference on Quasicrystals (ICQ7), Publisher: ELSEVIER SCIENCE SA, Pages: 859-862, ISSN: 0921-5093
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- Citations: 13
Vvedensky DD, 2000, Scaling functions for island-size distributions, Physical Review B, Vol: 62, Pages: 15435-15438
Island-size distributions for submonolayer epitaxy are obtained by solving mean-field rate equations in the limit that the ratio of the adatom diffusion rate to the deposition rate becomes infinite. We determine the necessary and sufficient conditions for the existence of a scaling solution and show that it is determined by the growth rates of islands. Distributions are calculated for several standard models and the pertinence of our results to real epitaxial systems is discussed.
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