Imperial College London
Portrait Picture

ProfessorDimitriVvedensky

Faculty of Natural Sciences, Department of Physics

Professor of Physics
 
 
 
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Contact

 

+44 (0)20 7594 7605d.vvedensky Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

813Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

240 results found

Itoh M, Bell GR, Joyce BA, Vvedensky DDet al., 2000, Transformation kinetics of homoepitaxial islands on GaAs(001), SURFACE SCIENCE, Vol: 464, Pages: 200-210, ISSN: 0039-6028

Journal article

Ratsch C, Gyure MF, Chen S, Kang M, Vvedensky DDet al., 2000, Fluctuations and scaling in aggregation phenomena, PHYSICAL REVIEW B, Vol: 61, Pages: 10598-10601, ISSN: 1098-0121

Journal article

Erbudak M, Bernhard B, Hensch A, Vvedensky DDet al., 2000, Structure, stability, and kinetics at quasicrystalline surfaces., ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, Vol: 219, Pages: U268-U268, ISSN: 0065-7727

Journal article

Itoh M, Bell GR, Joyce BA, Vvedensky DDet al., 2000, Monte Carlo simulation of GaAs(001) homoepitaxy, 5th International Conference on Computational Physics (ICCP5), Publisher: PROGRESS THEORETICAL PHYSICS PUBLICATION OFFICE, Pages: 90-95, ISSN: 0375-9687

Conference paper

Joyce BA, Vvedensky DD, Bell GR, Belk JG, Itoh M, Jones TSet al., 1999, Nucleation and growth mechanisms during MBE of III-V compounds, 1st Lawrence Symposium on Critical Issues in Epitaxy, Publisher: ELSEVIER SCIENCE SA, Pages: 7-16, ISSN: 0921-5107

Conference paper

Bolliger B, Erbudak M, Vvedensky DD, Kortan ARet al., 1999, Planar and cluster structure of icosahedral quasicrystals, 8th Symposium on Surface Physics, Publisher: CZECHOSLOVAK JNL OF PHYSICS, Pages: 1531-1536, ISSN: 0011-4626

Conference paper

Bell GR, Itoh M, Jones TS, Joyce BA, Vvedensky DDet al., 1999, Islands and defects on the growing InAs(001)-(2 x 4) surface, 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis, Publisher: ELSEVIER SCIENCE BV, Pages: 455-459, ISSN: 0039-6028

Conference paper

Joyce BA, Vvedensky DD, Jones TS, Itoh M, Bell GR, Belk JGet al., 1999, In situ studies of III-V semiconductor film growth by molecular beam epitaxy, 10th International Conference on Molecular Beam Epitaxy (MBE-X), Publisher: ELSEVIER SCIENCE BV, Pages: 106-112, ISSN: 0022-0248

Conference paper

Vvedensky DD, Itoh M, Bell GR, Jones TS, Joyce BAet al., 1999, Island nucleation and growth during homoepitaxy on GaAs(001)-(2 x 4), 10th International Conference on Molecular Beam Epitaxy (MBE-X), Publisher: ELSEVIER, Pages: 56-61, ISSN: 0022-0248

Conference paper

Caflisch RE, Gyure MF, Merriman B, Osher SJ, Ratsch C, Vvedensky DD, Zinck JJet al., 1999, Island dynamics and the level set method for epitaxial growth, APPLIED MATHEMATICS LETTERS, Vol: 12, Pages: 13-22, ISSN: 0893-9659

Journal article

Bolliger B, Erbudak M, Vvedensky DD, Kortan ARet al., 1999, Decagonal epilayers on the icosahedral quasicrystal Al<sub>70</sub>Pd<sub>20</sub>Mn<sub>10</sub>, PHYSICAL REVIEW LETTERS, Vol: 82, Pages: 763-766, ISSN: 0031-9007

Journal article

Joyce BA, Vvedensky DD, Jones TS, Itoh M, Bell GR, Belk JGet al., 1999, In situ studies of III-V semiconductor film growth by molecular beam epitaxy, Journal of Crystal Growth, Vol: 202, Pages: 106-112, ISSN: 0022-0248

Journal article

Joyce BA, Vvedensky DD, 1999, Heteroepitaxial growth modes and morphologies on GaAs surfaces, Thin films: Heteroepitaxial systems, Editors: Liu, Santos, Singapore, Publisher: World Scientific, Pages: 368-400, ISBN: 978-9810233907

Book chapter

Smilauer P, Mizushima K, Vvedensky DD, 1998, Activated Si-H exchange at Si-island edges on Si(001), PHYSICAL REVIEW LETTERS, Vol: 81, Pages: 5600-5603, ISSN: 0031-9007

Journal article

Gyure MF, Ratsch C, Merriman B, Caflisch RE, Osher S, Zinck JJ, Vvedensky DDet al., 1998, Level-set methods for the simulation of epitaxial phenomena, PHYSICAL REVIEW E, Vol: 58, Pages: R6927-R6930, ISSN: 1539-3755

Journal article

Itoh M, Bell GR, Avery AR, Jones TS, Joyce BA, Vvedensky DDet al., 1998, Island nucleation and growth on reconstructed GaAs(001) surfaces, PHYSICAL REVIEW LETTERS, Vol: 81, Pages: 633-636, ISSN: 0031-9007

Journal article

Bolliger B, Erbudak M, Vvedensky DD, Zurkirch M, Kortan ARet al., 1998, Surface structural transitions on the icosahedral quasicrystal Al<sub>70</sub>Pd<sub>20</sub>Mn<sub>10</sub>, PHYSICAL REVIEW LETTERS, Vol: 80, Pages: 5369-5372, ISSN: 0031-9007

Journal article

Joyce BA, Vvedensky DD, Avery AR, Belk JG, Dobbs HT, Jones TSet al., 1998, Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films, 4th International Symposium on Atomically Controlled Surfaces and Interfaces (ACSI 4), Publisher: ELSEVIER SCIENCE BV, Pages: 357-366, ISSN: 0169-4332

Conference paper

Tang LH, Smilauer P, Vvedensky DD, 1998, Noise-assisted mound coarsening in epitaxial growth, EUROPEAN PHYSICAL JOURNAL B, Vol: 2, Pages: 409-412, ISSN: 1434-6028

Journal article

Dobbs HT, Vvedensky DD, Zangwill A, 1998, Theory of quantum dot formation in Stranski-Krastanov systems, 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), Publisher: ELSEVIER SCIENCE BV, Pages: 646-652, ISSN: 0169-4332

Conference paper

Vvedensky DD, Caflisch RE, Gyure MF, Merriman B, Osher S, Ratsch C, Zinck JJet al., 1998, Island-size distributions for submonolayer epitaxy: Rate equations and beyond, Mechanisms and Principles of Epitaxial Growth in Metallic Systems, Vol: 528, Pages: 261-274, ISSN: 0272-9172

Journal article

Avery AR, Dobbs HT, Holmes DM, Joyce BA, Vvedensky DDet al., 1997, Nucleation and growth of islands on GaAs surfaces, PHYSICAL REVIEW LETTERS, Vol: 79, Pages: 3938-3941, ISSN: 0031-9007

Journal article

Erbudak M, Wetli E, Hochstrasser M, Pescia D, Vvedensky DDet al., 1997, Surface phase transitions during martensitic transformations of single-crystal Co, PHYSICAL REVIEW LETTERS, Vol: 79, Pages: 1893-1896, ISSN: 0031-9007

Journal article

Dobbs HT, Vvedensky DD, Zangwill A, Johansson J, Carlsson N, Seifert Wet al., 1997, Mean-field theory of quantum dot formation, PHYSICAL REVIEW LETTERS, Vol: 79, Pages: 897-900, ISSN: 0031-9007

Journal article

Joyce BA, Sudijono JL, Belk JG, Yamaguchi H, Zhang XM, Dobbs HT, Zangwill A, Vvedensky DD, Jones TSet al., 1997, A scanning tunneling microscopy reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A - Quantum dots and two-dimensional modes, 4th International Colloquium on Scanning Tunneling Microscopy, Publisher: JAPAN SOC APPLIED PHYSICS, Pages: 4111-4117, ISSN: 0021-4922

Conference paper

Mizushima K, Vvedensky DD, Smilauer P, Zangwill A, Zhang J, Joyce BAet al., 1997, Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane, 9th International Conference on Molecular Beam Epitaxy (MBE-IX), Publisher: ELSEVIER SCIENCE BV, Pages: 509-513, ISSN: 0022-0248

Conference paper

Dobbs HT, Zangwill A, Vvedensky DD, 1997, Nucleation and growth of coherent quantum dots: A mean field theory, Surface Diffusion - Atomistic and Collective Processes, Vol: 360, Pages: 263-275, ISSN: 0258-1221

Journal article

Joyce BA, Sudijono JL, Belk JG, Yamaguchi H, Zhang XM, Dobbs HT, Zangwill A, Vvedensky DD, Jones TSet al., 1997, A scanning tunneling microscopy reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A - Quantum dots and two- dimensional modes, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol: 36, Pages: 4111-4117, ISSN: 0021-4922

Journal article

Vvedensky DD, 1996, Atomistic modeling of epitaxial growth: Comparisons between lattice models and experiment, Workshop on Virtual MBE, Publisher: ELSEVIER SCIENCE BV, Pages: 182-187, ISSN: 0927-0256

Conference paper

Ratsch C, Smilauer P, Vvedensky DD, Zangwill Aet al., 1996, Mechanism for coherent island formation during heteroepitaxy, JOURNAL DE PHYSIQUE I, Vol: 6, Pages: 575-581, ISSN: 1155-4304

Journal article

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