Publications
240 results found
Itoh M, Bell GR, Joyce BA, et al., 2000, Transformation kinetics of homoepitaxial islands on GaAs(001), SURFACE SCIENCE, Vol: 464, Pages: 200-210, ISSN: 0039-6028
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- Citations: 21
Ratsch C, Gyure MF, Chen S, et al., 2000, Fluctuations and scaling in aggregation phenomena, PHYSICAL REVIEW B, Vol: 61, Pages: 10598-10601, ISSN: 1098-0121
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- Citations: 61
Erbudak M, Bernhard B, Hensch A, et al., 2000, Structure, stability, and kinetics at quasicrystalline surfaces., ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, Vol: 219, Pages: U268-U268, ISSN: 0065-7727
Itoh M, Bell GR, Joyce BA, et al., 2000, Monte Carlo simulation of GaAs(001) homoepitaxy, 5th International Conference on Computational Physics (ICCP5), Publisher: PROGRESS THEORETICAL PHYSICS PUBLICATION OFFICE, Pages: 90-95, ISSN: 0375-9687
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- Citations: 6
Joyce BA, Vvedensky DD, Bell GR, et al., 1999, Nucleation and growth mechanisms during MBE of III-V compounds, 1st Lawrence Symposium on Critical Issues in Epitaxy, Publisher: ELSEVIER SCIENCE SA, Pages: 7-16, ISSN: 0921-5107
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- Citations: 37
Bolliger B, Erbudak M, Vvedensky DD, et al., 1999, Planar and cluster structure of icosahedral quasicrystals, 8th Symposium on Surface Physics, Publisher: CZECHOSLOVAK JNL OF PHYSICS, Pages: 1531-1536, ISSN: 0011-4626
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- Citations: 2
Bell GR, Itoh M, Jones TS, et al., 1999, Islands and defects on the growing InAs(001)-(2 x 4) surface, 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis, Publisher: ELSEVIER SCIENCE BV, Pages: 455-459, ISSN: 0039-6028
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- Citations: 15
Joyce BA, Vvedensky DD, Jones TS, et al., 1999, In situ studies of III-V semiconductor film growth by molecular beam epitaxy, 10th International Conference on Molecular Beam Epitaxy (MBE-X), Publisher: ELSEVIER SCIENCE BV, Pages: 106-112, ISSN: 0022-0248
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- Citations: 18
Vvedensky DD, Itoh M, Bell GR, et al., 1999, Island nucleation and growth during homoepitaxy on GaAs(001)-(2 x 4), 10th International Conference on Molecular Beam Epitaxy (MBE-X), Publisher: ELSEVIER, Pages: 56-61, ISSN: 0022-0248
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- Citations: 7
Caflisch RE, Gyure MF, Merriman B, et al., 1999, Island dynamics and the level set method for epitaxial growth, APPLIED MATHEMATICS LETTERS, Vol: 12, Pages: 13-22, ISSN: 0893-9659
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- Citations: 67
Bolliger B, Erbudak M, Vvedensky DD, et al., 1999, Decagonal epilayers on the icosahedral quasicrystal Al<sub>70</sub>Pd<sub>20</sub>Mn<sub>10</sub>, PHYSICAL REVIEW LETTERS, Vol: 82, Pages: 763-766, ISSN: 0031-9007
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- Citations: 17
Joyce BA, Vvedensky DD, Jones TS, et al., 1999, In situ studies of III-V semiconductor film growth by molecular beam epitaxy, Journal of Crystal Growth, Vol: 202, Pages: 106-112, ISSN: 0022-0248
Joyce BA, Vvedensky DD, 1999, Heteroepitaxial growth modes and morphologies on GaAs surfaces, Thin films: Heteroepitaxial systems, Editors: Liu, Santos, Singapore, Publisher: World Scientific, Pages: 368-400, ISBN: 978-9810233907
Smilauer P, Mizushima K, Vvedensky DD, 1998, Activated Si-H exchange at Si-island edges on Si(001), PHYSICAL REVIEW LETTERS, Vol: 81, Pages: 5600-5603, ISSN: 0031-9007
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- Citations: 10
Gyure MF, Ratsch C, Merriman B, et al., 1998, Level-set methods for the simulation of epitaxial phenomena, PHYSICAL REVIEW E, Vol: 58, Pages: R6927-R6930, ISSN: 1539-3755
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- Citations: 80
Itoh M, Bell GR, Avery AR, et al., 1998, Island nucleation and growth on reconstructed GaAs(001) surfaces, PHYSICAL REVIEW LETTERS, Vol: 81, Pages: 633-636, ISSN: 0031-9007
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- Citations: 140
Bolliger B, Erbudak M, Vvedensky DD, et al., 1998, Surface structural transitions on the icosahedral quasicrystal Al<sub>70</sub>Pd<sub>20</sub>Mn<sub>10</sub>, PHYSICAL REVIEW LETTERS, Vol: 80, Pages: 5369-5372, ISSN: 0031-9007
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- Citations: 56
Joyce BA, Vvedensky DD, Avery AR, et al., 1998, Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films, 4th International Symposium on Atomically Controlled Surfaces and Interfaces (ACSI 4), Publisher: ELSEVIER SCIENCE BV, Pages: 357-366, ISSN: 0169-4332
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- Citations: 29
Tang LH, Smilauer P, Vvedensky DD, 1998, Noise-assisted mound coarsening in epitaxial growth, EUROPEAN PHYSICAL JOURNAL B, Vol: 2, Pages: 409-412, ISSN: 1434-6028
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- Citations: 31
Dobbs HT, Vvedensky DD, Zangwill A, 1998, Theory of quantum dot formation in Stranski-Krastanov systems, 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), Publisher: ELSEVIER SCIENCE BV, Pages: 646-652, ISSN: 0169-4332
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- Citations: 25
Vvedensky DD, Caflisch RE, Gyure MF, et al., 1998, Island-size distributions for submonolayer epitaxy: Rate equations and beyond, Mechanisms and Principles of Epitaxial Growth in Metallic Systems, Vol: 528, Pages: 261-274, ISSN: 0272-9172
Avery AR, Dobbs HT, Holmes DM, et al., 1997, Nucleation and growth of islands on GaAs surfaces, PHYSICAL REVIEW LETTERS, Vol: 79, Pages: 3938-3941, ISSN: 0031-9007
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- Citations: 80
Erbudak M, Wetli E, Hochstrasser M, et al., 1997, Surface phase transitions during martensitic transformations of single-crystal Co, PHYSICAL REVIEW LETTERS, Vol: 79, Pages: 1893-1896, ISSN: 0031-9007
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- Citations: 33
Dobbs HT, Vvedensky DD, Zangwill A, et al., 1997, Mean-field theory of quantum dot formation, PHYSICAL REVIEW LETTERS, Vol: 79, Pages: 897-900, ISSN: 0031-9007
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- Citations: 138
Joyce BA, Sudijono JL, Belk JG, et al., 1997, A scanning tunneling microscopy reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A - Quantum dots and two-dimensional modes, 4th International Colloquium on Scanning Tunneling Microscopy, Publisher: JAPAN SOC APPLIED PHYSICS, Pages: 4111-4117, ISSN: 0021-4922
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- Citations: 88
Mizushima K, Vvedensky DD, Smilauer P, et al., 1997, Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane, 9th International Conference on Molecular Beam Epitaxy (MBE-IX), Publisher: ELSEVIER SCIENCE BV, Pages: 509-513, ISSN: 0022-0248
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- Citations: 5
Dobbs HT, Zangwill A, Vvedensky DD, 1997, Nucleation and growth of coherent quantum dots: A mean field theory, Surface Diffusion - Atomistic and Collective Processes, Vol: 360, Pages: 263-275, ISSN: 0258-1221
Joyce BA, Sudijono JL, Belk JG, et al., 1997, A scanning tunneling microscopy reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A - Quantum dots and two- dimensional modes, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Vol: 36, Pages: 4111-4117, ISSN: 0021-4922
Vvedensky DD, 1996, Atomistic modeling of epitaxial growth: Comparisons between lattice models and experiment, Workshop on Virtual MBE, Publisher: ELSEVIER SCIENCE BV, Pages: 182-187, ISSN: 0927-0256
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- Citations: 9
Ratsch C, Smilauer P, Vvedensky DD, et al., 1996, Mechanism for coherent island formation during heteroepitaxy, JOURNAL DE PHYSIQUE I, Vol: 6, Pages: 575-581, ISSN: 1155-4304
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- Citations: 64
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