Imperial College London
Portrait Picture

ProfessorDimitriVvedensky

Faculty of Natural Sciences, Department of Physics

Professor of Physics
 
 
 
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Contact

 

+44 (0)20 7594 7605d.vvedensky Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

813Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

240 results found

SMILAUER P, VVEDENSKY DD, 1995, COARSENING AND SLOPE EVOLUTION DURING UNSTABLE EPITAXIAL-GROWTH, PHYSICAL REVIEW B, Vol: 52, Pages: 14263-14272, ISSN: 1098-0121

Journal article

RATSCH C, SMILAUER P, ZANGWILL A, VVEDENSKY DDet al., 1995, SUBMONOLAYER EPITAXY WITHOUT A CRITICAL NUCLEUS (VOL 329, PG L599, 1995), SURFACE SCIENCE, Vol: 338, Pages: L889-L890, ISSN: 0039-6028

Journal article

DUDAREV SL, VVEDENSKY DD, WHELAN MJ, 1995, DYNAMICAL ELECTRON-SCATTERING FROM GROWING SURFACES (VOL 324, PG L335, 1995), SURFACE SCIENCE, Vol: 336, Pages: L753-L753, ISSN: 0039-6028

Journal article

RATSCH C, SMILAUER P, ZANGWILL A, VVEDENSKY DDet al., 1995, SUBMONOLAYER EPITAXY WITHOUT A CRITICAL NUCLEUS, SURFACE SCIENCE, Vol: 329, Pages: L599-L604, ISSN: 0039-6028

Journal article

ORME C, JOHNSON MD, LEUNG KT, ORR BG, SMILAUER P, VVEDENSKY Det al., 1995, STUDIES OF LARGE-SCALE UNSTABLE GROWTH FORMED DURING GAAS(001) HOMOEPITAXY, 8th International Conference on Molecular Beam Epitaxy, Publisher: ELSEVIER SCIENCE BV, Pages: 128-135, ISSN: 0022-0248

Conference paper

KOSHIBA S, NODA T, NOGE H, NAKAMURA Y, ICHINOSE H, SHITARA T, VVEDENSKY DD, SAKAKI Het al., 1995, CONTROL OF RIDGE SHAPE FOR THE FORMATION OF NANOMETER-SCALE GAAS RIDGE QUANTUM WIRES BY MOLECULAR-BEAM EPITAXY, 8th International Conference on Molecular Beam Epitaxy, Publisher: ELSEVIER SCIENCE BV, Pages: 322-326, ISSN: 0022-0248

Conference paper

Koshiba S, 1995, Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy, Journal of Crystal Growth, Vol: 150, Pages: 322-326, ISSN: 0022-0248

Journal article

KANEKO T, SMILAUER P, JOYCE BA, 1995, REENTRANT LAYER-BY-LAYER ETCHING OF GAAS(001), PHYSICAL REVIEW LETTERS, Vol: 74, Pages: 3289-3292, ISSN: 0031-9007

Journal article

DUDAREV SL, VVEDENSKY DD, WHELAN MJ, 1995, DYNAMICAL ELECTRON-SCATTERING FROM GROWING SURFACES, SURFACE SCIENCE, Vol: 324, Pages: L355-L361, ISSN: 0039-6028

Journal article

Orme C, Johnson MD, Leung KT, Orr BG, Smilauer P, Vvedensky Det al., 1995, Studies of large scale unstable growth formed during GaAs(001) homoepitaxy, Journal of Crystal Growth, Vol: 150, Pages: 128-135, ISSN: 0022-0248

Journal article

Vvedensky DD, Smilauer P, 1995, Kinetic models of epitaxial growth: Theory and experiment, Acta Physica Polonica A, Vol: 87, Pages: 25-33, ISSN: 0587-4246

Journal article

Smilauer P, Vvedensky DD, 1995, Step-edge barriers, re-entrant oscillations, and unstable epitaxial growth, Fractal Aspects of Materials, Vol: 367, Pages: 263-272, ISSN: 0272-9172

Journal article

DUDAREV SL, VVEDENSKY DD, WHELAN MJ, 1994, STATISTICAL TREATMENT OF DYNAMICAL ELECTRON-DIFFRACTION FROM GROWING SURFACES, PHYSICAL REVIEW B, Vol: 50, Pages: 14525-14538, ISSN: 2469-9950

Journal article

WETLI E, ERBUDAK M, VVEDENSKY DD, 1994, SECONDARY-ELECTRON IMAGING OF DISORDERED SUBMONOLAYERS, SURFACE SCIENCE, Vol: 317, Pages: 235-240, ISSN: 0039-6028

Journal article

RATSCH C, ZANGWILL A, SMILAUER P, VVEDENSKY DDet al., 1994, SATURATION AND SCALING OF EPITAXIAL ISLAND DENSITIES, PHYSICAL REVIEW LETTERS, Vol: 72, Pages: 3194-3197, ISSN: 0031-9007

Journal article

JOYCE BA, VVEDENSKY DD, 1994, ATOMIC ARRANGEMENTS - JOIN JAPAN TO A UK UNIVERSITY, ADVANCED MATERIALS, Vol: 6, Pages: 265-268, ISSN: 0935-9648

Journal article

Vvedensky DD, 1994, New slant on epitaxial growth, Physics World, Vol: 7, Pages: 30-31, ISSN: 0953-8585

Journal article

Joyce BA, Vvedensky DD, Foxon CT, 1994, Growth mechanisms in MBE and CBE of III-V compounds, Handbook on Semiconductors, Editors: Mahajan, The Netherlands, Publisher: Elsevier, Pages: 275-368, ISBN: 978-0444888358

Book chapter

SMILAUER P, VVEDENSKY DD, 1993, STEP-EDGE BARRIERS ON GAAS(001), PHYSICAL REVIEW B, Vol: 48, Pages: 17603-17606, ISSN: 1098-0121

Journal article

SHITARA T, KANEKO T, VVEDENSKY DD, 1993, PRECURSOR-MEDIATED EPITAXIAL-GROWTH OF GAAS(001) FROM TRIETHYLGALLIUM - WHERE IS THE GALLIUM RELEASED, APPLIED PHYSICS LETTERS, Vol: 63, Pages: 3321-3323, ISSN: 0003-6951

Journal article

BEEBY JL, VVEDENSKY DD, 1993, EVOLUTION OF SURFACE-MORPHOLOGY DURING EPITAXIAL-GROWTH - DISCUSSION, PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, Vol: 344, Pages: 505-505, ISSN: 0962-8428

Journal article

VVEDENSKY DD, HAIDER N, SHITARA T, SMILAUER Pet al., 1993, EVOLUTION OF SURFACE-MORPHOLOGY DURING EPITAXIAL-GROWTH, PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, Vol: 344, Pages: 493-505, ISSN: 0962-8428

Journal article

SMILAUER P, WILBY MR, VVEDENSKY DD, 1993, SHAPE OF THE SURFACE-STEP-DENSITY OSCILLATIONS DURING SPUTTERING OF SINGULAR AND VICINAL SURFACES, PHYSICAL REVIEW B, Vol: 48, Pages: 4968-4971, ISSN: 0163-1829

Journal article

VVEDENSKY DD, ZANGWILL A, LUSE CN, WILBY MRet al., 1993, STOCHASTIC-EQUATIONS OF MOTION FOR EPITAXIAL-GROWTH, PHYSICAL REVIEW E, Vol: 48, Pages: 852-862, ISSN: 1539-3755

Journal article

SMILAUER P, WILBY MR, VVEDENSKY DD, 1993, MORPHOLOGY OF SINGULAR AND VICINAL METAL-SURFACES SPUTTERED AT DIFFERENT TEMPERATURES, SURFACE SCIENCE, Vol: 291, Pages: L733-L738, ISSN: 0039-6028

Journal article

HAIDER N, WILBY MR, VVEDENSKY DD, 1993, EPITAXIAL-GROWTH KINETICS ON PATTERNED SUBSTRATES, APPLIED PHYSICS LETTERS, Vol: 62, Pages: 3108-3110, ISSN: 0003-6951

Journal article

CRAMPIN S, VVEDENSKY DD, MONNIER R, 1993, STACKING-FAULT ENERGIES OF RANDOM METALLIC ALLOYS, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, Vol: 67, Pages: 1447-1457, ISSN: 0141-8610

Journal article

YOKOTSUKA T, WILBY MR, VVEDENSKY DD, KAWAMURA T, FUKUTANI K, INO Set al., 1993, COMPETITIVE KINETIC PROCESSES DURING HOMOEPITAXIAL GROWTH ON GE(111), APPLIED PHYSICS LETTERS, Vol: 62, Pages: 1673-1675, ISSN: 0003-6951

Journal article

SHITARA T, SUZUKI T, VVEDENSKY DD, NISHINAGA Tet al., 1993, CONCENTRATION PROFILES OF SURFACE ATOMS DURING EPITAXIAL-GROWTH ON VICINAL SURFACES, APPLIED PHYSICS LETTERS, Vol: 62, Pages: 1347-1349, ISSN: 0003-6951

Journal article

SMILAUER P, WILBY MR, VVEDENSKY DD, 1993, REENTRANT LAYER-BY-LAYER GROWTH - A NUMERICAL STUDY, PHYSICAL REVIEW B, Vol: 47, Pages: 4119-4122, ISSN: 0163-1829

Journal article

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