Imperial College London

Professor James Durrant, CBE, FRS

Faculty of Natural SciencesDepartment of Chemistry

Professor of Photochemistry
 
 
 
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Contact

 

+44 (0)20 7594 5321j.durrant Website

 
 
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Assistant

 

Miss Lisa Benbow +44 (0)20 7594 5883

 
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Location

 

G22CMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Way:2019:10.1063/1.5104333,
author = {Way, A and Luke, J and Evans, AD and Li, Z and Kim, J-S and Durrant, JR and Hin, Lee HK and Tsoi, WC},
doi = {10.1063/1.5104333},
journal = {AIP Advances},
pages = {085220--1--085220--5},
title = {Fluorine doped tin oxide as an alternative of indium tin oxide for bottom electrode of semi-transparent organic photovoltaic devices},
url = {http://dx.doi.org/10.1063/1.5104333},
volume = {9},
year = {2019}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Indium tin oxide (ITO) is commonly used as the transparent bottom electrode for organic solar cells. However, it is known that the cost ofthe ITO is quite high due to the indium element, and in some studies ITO coated glass substrate is found to be the most expensive componentof device fabrication. Moreover, indium migration from ITO can cause stability issues in organic solar cells. Nevertheless, the use of ITO asthe bottom electrode is still dominating in the field. Here, we explore the possibility of using fluorine doped tin oxide (FTO) as an alternativeto ITO for the bottom electrode of organic solar cells particularly on semi-transparent cells. We present side-by-side comparisons on theiroptical, morphological and device properties and suggest that FTO could be more suitable than ITO as the bottom electrode for glass substratebased organic photovoltaic devices.
AU - Way,A
AU - Luke,J
AU - Evans,AD
AU - Li,Z
AU - Kim,J-S
AU - Durrant,JR
AU - Hin,Lee HK
AU - Tsoi,WC
DO - 10.1063/1.5104333
EP - 1
PY - 2019///
SN - 2158-3226
SP - 085220
TI - Fluorine doped tin oxide as an alternative of indium tin oxide for bottom electrode of semi-transparent organic photovoltaic devices
T2 - AIP Advances
UR - http://dx.doi.org/10.1063/1.5104333
UR - https://aip.scitation.org/doi/10.1063/1.5104333
UR - http://hdl.handle.net/10044/1/73157
VL - 9
ER -