Imperial College London


Faculty of EngineeringDepartment of Materials

Professor of Theory and Simulation of Materials



+44 (0)20 7594 9949j.lischner




342Bessemer BuildingSouth Kensington Campus





Johannes is a Reader in Theory and Simulation of Materials and a Royal Society University Research Fellow in the Department of Materials at Imperial College London. He obtained a Ph.D. in physics from Cornell University in 2010. Before joining Imperial in 2014, he was a postdoctoral researcher at UC Berkeley and Lawrence Berkeley National Lab.

His research is focused on electronic excitations in complex materials. Recently, his group has developed novel methods to model excited states in twisted bilayers of two-dimensional materials, such as twisted bilayer graphene and twisted homo- and heterobilayers of transition metal dichalcogenides. Other areas of interest include hot carrier generation in nanoplasmonic materials and simulating core and valence electron spectroscopies via the GW and GW cumulant approach or the Delta-SCF method.

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Tepliakov NV, Ma R, Lischner J, et al., 2023, Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/Hexagonal boron nitride heterojunctions, Nano Letters: a Journal Dedicated to Nanoscience and Nanotechnology, Vol:23, ISSN:1530-6984, Pages:6698-6704

Ramzan MS, Goodwin ZAH, Mostofi AA, et al., 2023, Effect of Coulomb impurities on the electronic structure of magic angle twisted bilayer graphene, Npj 2d Materials and Applications, Vol:7, ISSN:2397-7132, Pages:1-8

Maity I, Mostofi AA, Lischner J, 2023, Electrons surf phason waves in moiré bilayers, Nano Letters: a Journal Dedicated to Nanoscience and Nanotechnology, Vol:23, ISSN:1530-6984, Pages:4870-4875

Kahk JM, Lischner J, 2023, Combining the Δ-self-consistent-field and GW methods for predicting core electron binding energies in periodic solids, Journal of Chemical Theory and Computation, Vol:19, ISSN:1549-9618, Pages:3276-3283

Doiron B, Li Y, Bower R, et al., 2023, Optimizing hot electron harvesting at planar metal–semiconductor interfaces with titanium oxynitride thin films, Acs Applied Materials and Interfaces, Vol:25, ISSN:1944-8244, Pages:30417-30426

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