Imperial College London

DrJohannesLischner

Faculty of EngineeringDepartment of Materials

Reader in Theory and Simulation of Materials
 
 
 
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Contact

 

+44 (0)20 7594 9949j.lischner

 
 
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Location

 

342Bessemer BuildingSouth Kensington Campus

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Summary

 

Summary

Johannes is a Reader in Theory and Simulation of Materials and a Royal Society University Research Fellow in the Department of Materials at Imperial College London. He obtained a Ph.D. in physics from Cornell University in 2010. Before joining Imperial in 2014, he was a postdoctoral researcher at UC Berkeley and Lawrence Berkeley National Lab.

His research is focused on electronic excitations in complex materials. Recently, his group has developed novel methods to model excited states in twisted bilayers of two-dimensional materials, such as twisted bilayer graphene and twisted homo- and heterobilayers of transition metal dichalcogenides. Other areas of interest include hot carrier generation in nanoplasmonic materials and simulating core and valence electron spectroscopies via the GW and GW cumulant approach or the Delta-SCF method.


Personal Website

Publications

Journals

Campbell AJ, Brotons-Gisbert M, Baek H, et al., 2022, Exciton-polarons in the presence of strongly correlated electronic states in a MoSe<inf>2</inf>/WSe<inf>2</inf> moiré superlattice, Npj 2d Materials and Applications, Vol:6

Annegarn M, Kahk JM, Lischner J, 2022, Combining Time-Dependent Density Functional Theory and the ΔSCF Approach for Accurate Core-Electron Spectra., J Chem Theory Comput

Barker BA, Deslippe J, Lischner J, et al., 2022, Spinor GW /Bethe-Salpeter calculations in BerkeleyGW: Implementation, symmetries, benchmarking, and performance, Physical Review B, Vol:106, ISSN:2469-9950

Och M, Anastasiou K, Leontis I, et al., 2022, Synthesis of mono- and few-layered n-type WSe2 from solid state inorganic precursors, Nanoscale, Vol:14, ISSN:2040-3364, Pages:15651-15662

Arrigo R, Ban L, Bartels-Rausch T, et al., 2022, Future directions: general discussion., Faraday Discuss, Vol:236, Pages:412-428

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