Imperial College London

ProfessorJohannesLischner

Faculty of EngineeringDepartment of Materials

Professor of Theory and Simulation of Materials
 
 
 
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Contact

 

+44 (0)20 7594 9949j.lischner

 
 
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Location

 

342Bessemer BuildingSouth Kensington Campus

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Summary

 

Summary

Johannes is a Professor in Theory and Simulation of Materials in the Department of Materials at Imperial College London. He is also the Director of the MSc in Advanced Material Science and Engineering and the Head of Events of the Thomas Young Centre. He obtained a Ph.D. in Physics from Cornell University in 2010. Before joining Imperial in 2014 as a Royal Society University Research Fellow, he was a postdoctoral researcher at UC Berkeley and Lawrence Berkeley National Lab.

His research is focused on electronic excitations in complex materials. Recently, his group has developed novel methods to model excited states in twisted bilayers of two-dimensional materials, such as twisted bilayer graphene and twisted homo- and heterobilayers of transition metal dichalcogenides. Other areas of interest include hot carrier generation in nanoplasmonic materials and simulating core and valence electron spectroscopies via the GW and GW cumulant approach or the Delta-SCF method.


Personal Website

Publications

Journals

Tangney P, Coiana G, Lischner J, 2024, Breakdown of phonon band theory in MgO, Physical Review B: Condensed Matter and Materials Physics, Vol:109, ISSN:1098-0121

Lian Z, Meng Y, Ma L, et al., 2024, Valley-polarized excitonic Mott insulator in WS2/WSe2 moiré superlattice, Nature Physics, Vol:20, ISSN:1745-2473, Pages:34-39

Molino L, Aggarwal L, Maity I, et al., 2023, Influence of Atomic Relaxations on the Moiré Flat Band Wave Functions in Antiparallel Twisted Bilayer WS2., Nano Lett, Vol:23, Pages:11778-11784

João SM, Jin H, Lischner JC, 2023, Atomistic Theory of Hot-Carrier Relaxation in Large Plasmonic Nanoparticles., J Phys Chem C Nanomater Interfaces, Vol:127, ISSN:1932-7447, Pages:23296-23302

Aghajanian M, Mostofi AA, Lischner J, 2023, Optical properties of charged defects in monolayer MoS₂, Electronic Structure, Vol:5, ISSN:2516-1075

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