Imperial College London
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ProfessorJohannesLischner

Faculty of Engineering, Department of Materials

Professor of Theory and Simulation of Materials
 
 
 
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Contact

 

+44 (0)20 7594 9949j.lischner

 
 
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Location

 

342Bessemer BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Dal:2019:10.1103/PhysRevMaterials.3.115203,
author = {Dal, Forno S and Lischner, J},
doi = {10.1103/PhysRevMaterials.3.115203},
journal = {Physical Review Materials},
title = {Electron-phonon coupling and hot electron thermalization in titanium nitride},
url = {http://dx.doi.org/10.1103/PhysRevMaterials.3.115203},
volume = {3},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We have studied the thermalization of hot carriers in both pristine and defectivetitanium nitride (TiN) using a two-temperature model. All parameters of this model,including the electron-phonon coupling parameter, were obtained from  rst-principlesdensity-functional theory calculations. The virtual crystal approximation was used todescribe defective systems. We  nd that thermalization of hot carriers occurs on muchfaster time scales than in gold as a consequence of the signi cantly stronger electronphonon coupling in TiN. Speci cally, the largest thermalization times, on the order of200 femtoseconds, are found in TiN with nitrogen vacancies for electron temperaturesaround 4000 K.
AU  - Dal,Forno S
AU  - Lischner,J
DO  - 10.1103/PhysRevMaterials.3.115203
PY  - 2019///
SN  - 2475-9953
TI  - Electron-phonon coupling and hot electron thermalization in titanium nitride
T2  - Physical Review Materials
UR  - http://dx.doi.org/10.1103/PhysRevMaterials.3.115203
UR  - http://hdl.handle.net/10044/1/74875
VL  - 3
ER  -
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