Imperial College London
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ProfessorJohannesLischner

Faculty of Engineering, Department of Materials

Professor of Theory and Simulation of Materials
 
 
 
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Contact

 

+44 (0)20 7594 9949j.lischner

 
 
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Location

 

342Bessemer BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Li:2020:10.1021/acsnano.0c01037,
author = {Li, L and Zhang, J and Myeong, G and Shin, W and Lim, H and Kim, B and Kim, S and Jin, T and Cavill, S and Kim, BS and Kim, C and Lischner, J and Ferreira, A and Cho, S},
doi = {10.1021/acsnano.0c01037},
journal = {ACS Nano},
pages = {5251--5259},
title = {Gate-tunable reversible rashba-edelstein effect in a few-layer graphene/2H-TaS2 heterostructure at room temperature.},
url = {http://dx.doi.org/10.1021/acsnano.0c01037},
volume = {14},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows for a strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent two-dimensional Dirac Fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.
AU  - Li,L
AU  - Zhang,J
AU  - Myeong,G
AU  - Shin,W
AU  - Lim,H
AU  - Kim,B
AU  - Kim,S
AU  - Jin,T
AU  - Cavill,S
AU  - Kim,BS
AU  - Kim,C
AU  - Lischner,J
AU  - Ferreira,A
AU  - Cho,S
DO  - 10.1021/acsnano.0c01037
EP  - 5259
PY  - 2020///
SN  - 1936-0851
SP  - 5251
TI  - Gate-tunable reversible rashba-edelstein effect in a few-layer graphene/2H-TaS2 heterostructure at room temperature.
T2  - ACS Nano
UR  - http://dx.doi.org/10.1021/acsnano.0c01037
UR  - https://www.ncbi.nlm.nih.gov/pubmed/32267673
UR  - https://pubs.acs.org/doi/10.1021/acsnano.0c01037
UR  - http://hdl.handle.net/10044/1/79947
VL  - 14
ER  -
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