Imperial College London
Prof. Jing Zhang

Prof. Jing Zhang

Faculty of Natural Sciences, Department of Physics

Professor of Physics
 
 
 
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Contact

 

+44 (0)20 7594 7594jing.zhang Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

910Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

195 results found

Gocalinska A, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Joyce BA, Zhang J, Vvedensky DD, Pelucchi Eet al., 2014, Unusual nanostructures of "lattice matched" InP on AlInAs, Applied Physics Letters, Vol: 104, ISSN: 0003-6951

ABSTRACTWe show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology.The formation of interfaces with structural, compositional, and morphological integrity is crucial for the performance of many devices. Imperfect interfaces produce broadening in photoluminescence line widths and degrade electronic transport by enhanced scattering. Structure and morphology can be optimized through controlled sample preparation and a judicious choice of growth conditions. However, while semiconductor alloys enable band gaps to be engineered, the attainment of compositional uniformity presents altogether different challenges. Indeed, in III–V systems, phase separation is common when alloys are deposited onto a lattice-matched substrate, for example, by molecular-beam epitaxy (MBE).1 Our focus here is Al1−xInxAs, a large band-gap (lattice-matched) material used in heterostructures with InP. When produced by MBE (in specific, but a relatively large range of growth conditions), this alloy is known to exhibit clustering when deposited onto InP.2,3 Interestingly, theoretical studies4,5 have shown that this type of incipient spinodal decomposition is forbidden if the surface of the alloy film is perfectly flat because of the regions of additional strain created with respect to the random alloy, which has zero mean strain everywhere. But on a surface with roughness, phase separation can become more active at roughness-i

Journal article

Zhang Z, Pan JS, Chai JW, Zhang J, Tok ESet al., 2011, Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface, SURFACE SCIENCE, Vol: 605, Pages: 1852-1860, ISSN: 0039-6028

Journal article

Elder WJ, Ward RM, Zhang J, 2011, Double-group formulation of k . p theory for cubic crystals, PHYSICAL REVIEW B, Vol: 83, ISSN: 2469-9950

Journal article

Matmon G, Paul DJ, Lever L, Califano M, Ikonic Z, Kelsall RW, Zhang J, Chrastina D, Isella G, von Kanel H, Mueller E, Neels Aet al., 2010, Si/SiGe quantum cascade superlattice designs for terahertz emission, JOURNAL OF APPLIED PHYSICS, Vol: 107, ISSN: 0021-8979

Journal article

Zhang Z, Pan JS, Zhang J, Tok ESet al., 2010, Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, Vol: 12, Pages: 7171-7183, ISSN: 1463-9076

Journal article

Chiam SY, Chim WK, Ren Y, Pi C, Pan JS, Huan ACH, Wang SJ, Zhang Jet al., 2008, Effects of annealing on the valence band offsets between hafnium aluminate and silicon, JOURNAL OF APPLIED PHYSICS, Vol: 104, ISSN: 0021-8979

Journal article

Chiam SY, Chim WK, Pi C, Huan ACH, Wang SJ, Pan JS, Turner S, Zhang Jet al., 2008, Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates, JOURNAL OF APPLIED PHYSICS, Vol: 103, ISSN: 0021-8979

Journal article

Ross IM, Gass M, Walther T, Bleloch A, Cullis AG, Lever L, Ikonic Z, Califano M, Kelsall RW, Zhang J, Paul DJet al., 2008, Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures, 15th Conference on Microscopy of Semiconducting Materials, Publisher: SPRINGER-VERLAG BERLIN, Pages: 269-+, ISSN: 0930-8989

Conference paper

McGee WM, Williams RS, Ashwin MJ, Jones TS, Clarke E, Zhang J, Tomic Set al., 2007, Structure, morphology, and optical properties of GaxIn1-xN0.05As0.95 quantum wells: Influence of the growth mechanism, PHYSICAL REVIEW B, Vol: 76, ISSN: 2469-9950

Journal article

Paul D J, Matmon G, Townsend P, Zhang J, Zhao M, Ni W Xet al., 2007, A Review of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers, IETE Journal of Research, Vol: 53, Pages: 285-292, ISSN: 0377-2063

Journal article

Suet Z, Paul DJ, Zhang J, Turner SGet al., 2007, Si/SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning, APPLIED PHYSICS LETTERS, Vol: 90, ISSN: 0003-6951

Journal article

Chiam SY, Chim WK, Huan ACH, Zhang J, Pan JSet al., 2007, Coverage dependent reaction of yttrium on silicon and the oxidation of yttrium silicide investigated by x-ray photoelectron spectroscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol: 25, Pages: 500-507, ISSN: 0734-2101

Journal article

Li Q, Tok ES, Zhang J, Kang HCet al., 2007, Reassessment of the molecular mechanisms for H-2 thermal desorption pathways from Si(1-x)Gex(001)-(2x1) surfaces, JOURNAL OF CHEMICAL PHYSICS, Vol: 126, ISSN: 0021-9606

Journal article

Williams RS, McGee WM, Ashwin MJ, Jones TS, Clarke E, Stavrinou P, Zhang J, Tomic S, Mulcahy CPAet al., 2007, Wavelength control across the near IR spectrum with GaInNAs, APPLIED PHYSICS LETTERS, Vol: 90, ISSN: 0003-6951

Journal article

Califano M, Vinh NQ, Phillips PJ, Ikonic Z, Kelsall RW, Harrison P, Pidgeon CR, Murdin BN, Paul DJ, Townsend P, Zhang J, Ross IM, Cullis AGet al., 2007, Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness, PHYSICAL REVIEW B, Vol: 75, ISSN: 1098-0121

Journal article

Mitrovic IZ, El Mubarek HAW, Buiu O, Hall S, Ashburn P, Zhang Jet al., 2007, SiGeC HBTs: impact of C on device performance, Nanoscaled Semiconductor-on-Insulator structures and devices, Publisher: Springer, Pages: 171-178

Conference paper

Lynch SA, Paul DJ, Townsend P, Matmon G, Suet Z, Kelsall RW, Ikonic Z, Harrison P, Zhang J, Norris DJ, Cullis AG, Pidgeon CR, Murzyn P, Murdin B, Bain M, Gamble HS, Zhao M, Ni W-Xet al., 2006, Toward silicon-based lasers for terahertz sources, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol: 12, Pages: 1570-1578, ISSN: 1077-260X

Journal article

Stoffel M, Zhang J, Schmidt OG, 2006, Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates, 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), Publisher: IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, Pages: 921-925, ISSN: 1745-1353

Conference paper

Zhang J, Turner SG, Chiam SY, Liu R, Tok ES, Wee ATS, Huan ACH, Kelly I, Mulcahy CPAet al., 2006, Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching, SURFACE SCIENCE, Vol: 600, Pages: 2288-2292, ISSN: 0039-6028

Journal article

Chiam SY, Chim WK, Huan ACH, Pan JS, Zhang Jet al., 2006, Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy, APPLIED PHYSICS LETTERS, Vol: 88, ISSN: 0003-6951

Journal article

Seng HL, Osipowicz T, Zhang J, Tok ESet al., 2005, Observation of local lattice tilts in strain-relaxed Si1-xGex using high resolution channeling contrast microscopy, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Vol: 81, Pages: 1163-1166, ISSN: 0947-8396

Journal article

Lynch SA, Townsend P, Matmon G, Paul DJ, Bain M, Gamble HS, Zhang J, Ikonic Z, Kelsall RW, Harrison Pet al., 2005, Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon, APPLIED PHYSICS LETTERS, Vol: 87, ISSN: 0003-6951

Journal article

Shi J, Chuan Kang H, Tok ES, Zhang Jet al., 2005, Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2x1), JOURNAL OF CHEMICAL PHYSICS, Vol: 123, ISSN: 0021-9606

Journal article

Karunaratne MSA, Willoughby AFW, Bonar JM, Zhang J, Ashburn Pet al., 2005, Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon, JOURNAL OF APPLIED PHYSICS, Vol: 97, ISSN: 0021-8979

Journal article

Zhang J, Li XB, Neave JH, Norris DJ, Cullis AG, Kelsall RW, Lynch S, Towsend P, Paul DJ, Fewster PFet al., 2005, SiGe quantum cascade structures for light emitting devices, 13th International Conference on Molecular Beam Epitaxy (MBE XII), Publisher: ELSEVIER, Pages: 488-494, ISSN: 0022-0248

Conference paper

Zhang J, Neave JH, Li XB, Fewster PF, El Mubarek HAW, Ashburn P, Mitrovic IZ, Buiu O, Hall Set al., 2005, GSMBE growth and structural characterisation of SiGeC layers for HBT, 13th International Conference on Molecular Beam Epitaxy (MBE XII), Publisher: ELSEVIER SCIENCE BV, Pages: 505-511, ISSN: 0022-0248

Conference paper

Seng HL, Osipowicz T, Zhang J, Tok ES, Watt Fet al., 2005, Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopy, 9th International Conference on Nuclear Microprobe Technology and Applications, Publisher: ELSEVIER SCIENCE BV, Pages: 446-451, ISSN: 0168-583X

Conference paper

Li XB, Neave JH, Norris DJ, Cullis AG, Paul DJ, Kelsall RW, Zhang Jet al., 2005, Growth and structural characterisation of Si/SiGe hetero structures for optoelectronic applications, Symposium of the European-Materials-Research-Society on Si-Based Photonics - Towards True Monolithic Integration, Publisher: ELSEVIER SCIENCE BV, Pages: 855-858, ISSN: 0925-3467

Conference paper

Paul DJ, Temple M, Olsen SH, ONeill AG, Tang YT, Waite AM, Cerrina C, Evans AGR, Li X, Zhang J, Norris DJ, Cullis AGet al., 2005, Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively- strained p-MOS fabricated in a 0.25 mu m heterostructure CMOS process, 2nd International SiGe Technology and Device Meeting (ISTDM), Publisher: ELSEVIER SCI LTD, Pages: 343-346, ISSN: 1369-8001

Conference paper

Kelsall RW, Ikonic Z, Harrison P, Lynch SA, Townsend P, Paul DJ, Norris DJ, Liew SL, Cullis AG, Li X, Zhang J, Bain M, Gamble HSet al., 2005, Optical cavities for Si/SiGe tetrahertz quantum cascade emitters, Symposium of the European-Materials-Research-Society on Si-Based Photonics - Towards True Monolithic Integration, Publisher: ELSEVIER SCIENCE BV, Pages: 851-854, ISSN: 0925-3467

Conference paper

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