Publications
195 results found
Kelsall RW, Ikonic Z, Harrison P, et al., 2005, Optical cavities for Si/SiGe tetrahertz quantum cascade emitters, Symposium of the European-Materials-Research-Society on Si-Based Photonics - Towards True Monolithic Integration, Publisher: ELSEVIER SCIENCE BV, Pages: 851-854, ISSN: 0925-3467
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- Citations: 6
Mitrovic IZ, Buiu O, Hall S, et al., 2005, Electrical and materials characterization of GSMBE grown Si<sub>1-<i>x-y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> layers for heterojunction bipolar transistor applications, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 20, Pages: 95-102, ISSN: 0268-1242
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- Citations: 6
Karunaratne MSA, Bonar JM, Zhang J, et al., 2005, Diffusion of boron in silicon and silicon-germanium in the presence of carbon, 6th International Conference on Diffusion in Materials, Publisher: TRANS TECH PUBLICATIONS LTD, Pages: 998-1003, ISSN: 1012-0386
Paul DJ, Lynch SA, Townsend P, et al., 2005, Towards a Si/SiGe quantum cascade laser for terahertz applications, Symposium on Group-4 Semiconductor Nanostructures held at the 2004 MRS Fall Meeting, Publisher: MATERIALS RESEARCH SOCIETY, Pages: 59-68, ISSN: 0272-9172
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- Citations: 2
Olshanetsky EB, Renard V, Kvon ZD, et al., 2005, Interaction-induced transverse magnetoresistance with a temperature-dependent sign in a n-Si/SiGe structure, Europhysics Letters, Vol: 71, Pages: 665-671, ISSN: 0295-5075
Townsend P, Paul DJ, Lynch SA, et al., 2005, LO phonon scattering as a depopulation mechanism in Si/SiGe quantum cascades, 2nd IEEE International Conference on Group IV Photonics, Publisher: IEEE, Pages: 7-9
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- Citations: 2
Matmon G, Lynch SA, Townsend P, et al., 2005, Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature, 2nd IEEE International Conference on Group IV Photonics, Publisher: IEEE, Pages: 13-15
Lynch SA, Paul DJ, Townsend P, et al., 2005, Silicon quantum cascade lasers for THz sources, 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, Publisher: IEEE, Pages: 727-728, ISSN: 1092-8081
Uppal S, Bonar JM, Zhang J, et al., 2004, Arsenic diffusion in Si and strained Si<i><sub>x</sub></i>Ge<sub>1-<i>x</i></sub> alloys at 1000 °C, Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineering held at the E-MRS 2004 Spring Meeting, Publisher: ELSEVIER SCIENCE SA, Pages: 349-351, ISSN: 0921-5107
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- Citations: 9
El Mubarek HAW, Bonar JM, Dilliway GD, et al., 2004, Effect of fluorine implantation dose on boron thermal diffusion in silicon, JOURNAL OF APPLIED PHYSICS, Vol: 96, Pages: 4114-4121, ISSN: 0021-8979
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- Citations: 27
Uppal S, Willoughby AFW, Bonar JM, et al., 2004, Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si<sub>0.9</sub>Ge<sub>0.1</sub>, APPLIED PHYSICS LETTERS, Vol: 85, Pages: 552-554, ISSN: 0003-6951
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- Citations: 8
Olsen SH, O'Neill AG, Driscoll LS, et al., 2004, Optimization of alloy composition for high-performance strained-Si-SiGe n-channel MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 51, Pages: 1156-1163, ISSN: 0018-9383
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- Citations: 16
Olsen SH, O'Neill AG, Chattopadhyay S, et al., 2004, Evaluation of strained Si/SiGe material for high performance CMOS, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 19, Pages: 707-714, ISSN: 0268-1242
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- Citations: 11
Gaspari V, Fobelets K, Ding PW, et al., 2004, Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode, IEEE ELECTRON DEVICE LETTERS, Vol: 25, Pages: 334-336, ISSN: 0741-3106
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- Citations: 7
Renard V, Olshanetky EB, Kvon ZD, et al., 2004, Corrections to conductivity on the metallic side of metal-insulator transition in n-Si/SiGe heterostructures, 15th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-15), Publisher: ELSEVIER SCIENCE BV, Pages: 256-259, ISSN: 1386-9477
Michelakis K, Despotopoulos S, Gaspari V, et al., 2004, SiGe virtual substrate HMOS transistor for analogue applications, 1st International SiGe Technology and Device Meeting (ISTDM), Publisher: ELSEVIER SCIENCE BV, Pages: 386-389, ISSN: 0169-4332
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- Citations: 4
Fobelets K, Tan TL, Thielemans K, et al., 2004, Colour coding Ge concentrations in Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i> by bevelling and oxidation:: CABOOM, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 19, Pages: 510-515, ISSN: 0268-1242
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- Citations: 2
Lau GS, Tok ES, Liu R, et al., 2004, Roughening behavior in Si/SiGe heterostructures under O<sub>2</sub><SUP>+</SUP> bombardment, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 215, Pages: 76-82, ISSN: 0168-583X
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- Citations: 9
Zhang J, Li XB, Fewster PF, 2004, Dissecting a compositionally graded SiGe virtual substrate by X-ray reciprocal space mapping, SiGe: materials, processing and devices: 2004 joint international meeting, Publisher: Electrochemical Society, Pages: 983-990
Zhang J, Neave JH, Li XB, et al., 2004, Growth of SiGeC layers by GSMBE and their characterization by x-ray techniques, SiGe: materials, processing and devices: 2004 joint international meeting, Publisher: Electrochemical Society, Pages: 203-214
Kelsall RW, Ikonic Z, Harrison P, et al., 2004, Silicon germanium quantum cascade heterostructures for infra-red emission, 1st IEEE International Conference on Group IV Photonics, Publisher: IEEE, Pages: 34-36
Ballard IM, Barnham KWJ, Zhang J, et al., 2004, Development of a thin film silicon benchmark cell, Proceedings 19th European photovoltaic solar energy conference, Paris, Pages: 1229-1232
Karunaratne MSA, Bonar JM, Zhang J, et al., 2004, Effect of point defect injection on B diffusion in C containing Si and SiGe, High-mobility group-IV materials and devices, symposium B, San Francisco, California, Publisher: MRS, Pages: 231-236
Karunaratne MSA, Bonar JM, Zhang J, et al., 2004, Effect of carbon on diffusion of Boron in SiGe between 940-1050^oC, High-mobility group-IV materials and devices. Symposium B, San Francisco, Publisher: MRS, Pages: 213-218
Bonar JM, Karunaratne MSA, Uppal S, et al., 2004, Diffusion in SiGe: defect injection studies in Sb, As and B, Honolulu, HI, United States, SiGe: materials, processing and devices: 2004 joint international meeting, Publisher: Electrochemical Society, Pages: 903-914
Uppal S, Bonar JM, Zhang J, et al., 2004, Arsenic diffusion in Si and Si~0~.~9Ge~0~.~1 alloys: effect of defect injection, Warrendale, Silicon front-end junction formation- physics and technology symposium, San Francisco, California, 13 - 15 April 2004, Publisher: Materials Research Society, Pages: 403-408
Uppal S, Bonar JM, Zhang J, et al., 2004, Arsenic diffusion in Si and Si~0~.~9Ge~0~.~1 alloys: effect of defect injection, High-mobility group-IV materials and devices, symposium B, San Francisco, California, 13 - 15 April 2004, Publisher: Materials Research Society, Pages: 261-266
Paul DJ, Townsend P, Lynch SA, et al., 2004, In search of a Si/SiGe THz quantum cascade laser, Topical Meeting on Silicon Monolithic Intergrated Circuits in RF Systems, Publisher: IEEE, Pages: 143-146
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- Citations: 3
Olsen SH, O'Neill AG, Chattopadhyay S, et al., 2003, Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors, JOURNAL OF APPLIED PHYSICS, Vol: 94, Pages: 6855-6863, ISSN: 0021-8979
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- Citations: 14
Lau GS, Tok ES, Liu R, et al., 2003, Nanostructure formation by O<sub>2</sub><SUP>+</SUP> ion sputtering of Si/SiGe heterostructures, NANOTECHNOLOGY, Vol: 14, Pages: 1187-1191, ISSN: 0957-4484
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- Citations: 5
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