Imperial College London
Prof. Jing Zhang

Prof. Jing Zhang

Faculty of Natural Sciences, Department of Physics

Academic Visitor
 
 
 
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Contact

 

+44 (0)20 7594 7594jing.zhang Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

910Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

195 results found

Seng HL, Osipowicz T, Sum TC, Breese MBH, Watt F, Tok ES, Zhang Jet al., 2003, High-resolution channeling contrast microscopy of compositionally graded Si<sub>1-<i>X</i></sub>Ge<i><sub>X</sub></i> layers, 8th International Conference on Nuclear Microprobe Technology and Applications, Publisher: ELSEVIER SCIENCE BV, Pages: 483-488, ISSN: 0168-583X

Conference paper

Olshanetsky EB, Renard V, Kvon ZD, Portal JC, Woods NJ, Zhang J, Harris JJet al., 2003, Conductivity of a two-dimensional electron gas in a Si/SiGe heterostructure near the metal-insulator transition: Role of the short- and long-range scattering potential, PHYSICAL REVIEW B, Vol: 68, ISSN: 1098-0121

Journal article

Price RW, Tok ES, Woods NJ, Zhang Jet al., 2003, The effects of carbon incorporation during GSMBE of Si<sub>1-<i>y</i></sub>C<i><sub>y</sub></i> and Si<sub>1-<i>x</i>-<i>y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i>:: growth dynamics and segregation, 7th International Conference on Nanometer-Scale Science and Technology (NANO-7)/21st European Conference on Surface Science (ECOSS-21), Publisher: ELSEVIER SCIENCE BV, Pages: 905-910, ISSN: 0039-6028

Conference paper

Price RW, Tok ES, Liu R, Wee ATS, Woods NJ, Zhang Jet al., 2003, Dynamics and surface segregation during GSMBE of Si<sub>1-<i>y</i></sub>C<i><sub>y</sub></i> and Si<sub>1-<i>x</i>-<i>y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> on the Si(001) surface, 12th International Conference on Molecular Beam Epitaxy (MBE-XII), Publisher: ELSEVIER SCIENCE BV, Pages: 676-680, ISSN: 0022-0248

Conference paper

Ferguson RS, Fobelets K, Ahmad MM, Norris DJ, Zhang Jet al., 2003, Determining the thickness and composition of SiGe heterostructures using an optical microscope, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 18, Pages: 390-392, ISSN: 0268-1242

Journal article

Zhi D, Wei M, Jones TS, Pashley DW, Zhang J, Joyce BA, Dunin-Borkowski RE, Midgley PAet al., 2003, Facet formation in Si layers selectively grown on patterned substrates studied by different electron microscopy techniques, Bristol, Conference on Microscopy of Semiconducting Materials, University of Cambridge, Cambridge, England, 31 March 2003, Publisher: IOP Publishing Ltd, Pages: 239-242

Conference paper

Norris DJ, Cullis AG, Olsen SH, O'Neill AG, Zhang Jet al., 2003, Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures, Bristol, Conference on microscopy of semiconducting materials, University of Cambridge, Cambridge, England, 31 March 2003, Publisher: IOP Publishing Ltd, Pages: 389-392

Conference paper

Li XB, Price RW, Tok ES, Seng HL, Osipowicz T, Woods NJ, Zhang Jet al., 2003, Surface morphology and long range order of Si1-xGex on compositionally graded SiGe buffer grown on Si(001) substrate, ICIS3: SiGe(C) epitaxy and heterostructures: 3rd international conference, Santa Fe, NM, March 2003, Publisher: ICIS3

Conference paper

Price RW, Woods NJ, Tok ES, Zhang Jet al., 2003, A study of Si1-yCy/Si1-x-y Gex Cy growth: C segregation and hydrogen desorption, Bristol, Physics of semiconductors 2002 : proceedings of the 26th international conference on the physics of semiconductors held in Edinburgh, UK, 29 July - 2 August 2002, Publisher: Institute of Physics Publications

Conference paper

Bonar JM, Karunaratne MSA, Price RW, El Mubarek HAW, Zhang J, Willoughby AFWet al., 2003, The effect of defect injection on B in SiGeC, ICIS3: SiGe(C) epitaxy and heterostructures: 3rd international conference, Santa Fe, NM, March 2003, Publisher: ICIS3

Conference paper

Price RW, Tok ES, Woods NJ, Zhang Jet al., 2002, Growth dynamics of Si<sub>1-<i>y</i></sub>C<i><sub>y</sub></i> and Si<sub>1-<i>x</i>-<i>y</i></sub>Ge<i><sub>x</sub></i>C<i><sub>y</sub></i> on Si(001) surface from disilane, germane, and methylsilane, APPLIED PHYSICS LETTERS, Vol: 81, Pages: 3780-3782, ISSN: 0003-6951

Journal article

Tok ES, Neave JH, Zhang J, 2002, Comment on "A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films" [Surf. Sci. 459 (2000) 277-286], SURFACE SCIENCE, Vol: 515, Pages: 263-265, ISSN: 0039-6028

Journal article

Olsen SH, O'Neill AG, Bull SJ, Woods NJ, Zhang Jet al., 2002, Effect of metal-oxide-semiconductor processing on the surface roughness of strained Si/SiGe material, JOURNAL OF APPLIED PHYSICS, Vol: 92, Pages: 1298-1306, ISSN: 0021-8979

Journal article

Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Woods NJ, Zhang J, Fobelets K, Kemhadjian HAet al., 2002, Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 17, Pages: 655-661, ISSN: 0268-1242

Journal article

Wielunski LS, Osipowicz T, Teo EJ, Watt F, Tok ES, Zhang Jet al., 2002, Optimal geometry for GeSi/Si super-lattice structure RBS investigation, 15th International Conference on Ion-Beam Analysis (IBA-15), Publisher: ELSEVIER SCIENCE BV, Pages: 414-418, ISSN: 0168-583X

Conference paper

Osipowicz T, Seng HL, Wielunski LS, Tok ES, Breton G, Zhang Jet al., 2002, High resolution channeling contrast microscopy and channeling analysis of SiGe quantum well structures, 15th International Conference on Ion-Beam Analysis (IBA-15), Publisher: ELSEVIER, Pages: 345-350, ISSN: 0168-583X

Conference paper

Seng HL, Osipowicz T, Sum TC, Tok ES, Breton G, Woods NJ, Zhang Jet al., 2002, Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy, APPLIED PHYSICS LETTERS, Vol: 80, Pages: 2940-2942, ISSN: 0003-6951

Journal article

Ekins-Daukes NJ, Kawaguchi K, Zhang J, 2002, Strain-balanced criteria for multiple quantum well structures and its signature in X-ray rocking curves, CRYSTAL GROWTH & DESIGN, Vol: 2, Pages: 287-292, ISSN: 1528-7483

Journal article

Kawaguchi K, Konishi K, Koh S, Shiraki Y, Kaneko Y, Zhang Jet al., 2002, Optical properties of strain-balanced Si<sub>0.73</sub>Ge<sub>0.27</sub> planar microcavities on Si substrates, International Conference on Solid State Devices and Materials, Publisher: INST PURE APPLIED PHYSICS, Pages: 2664-2667, ISSN: 0021-4922

Conference paper

Estibals O, Kvon ZD, Portal JC, Plotnikov AY, Gauffier JL, Woods NJ, Zhang J, Harris JJet al., 2002, Gated wires and interferometers based on Si/SiGe heterostructures, 10th International Conference on Modulated Semiconductor Structures, Publisher: ELSEVIER SCIENCE BV, Pages: 1043-1046, ISSN: 1386-9477

Conference paper

Kawaguchi K, Koh S, Shiraki Y, Zhang Jet al., 2002, Fabrication of strain-balanced Si<sub>0.73</sub>Ge<sub>0.27</sub>/Si-distributed Bragg reflectors on Si substrates for optical device applications, 10th International Conference on Modulated Semiconductor Structures, Publisher: ELSEVIER, Pages: 1051-1054, ISSN: 1386-9477

Conference paper

Zhang J, Woods NJ, Breton G, Price RW, Hartell AD, Lau GS, Liu R, Wee ATS, Tok ESet al., 2002, Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides, Spring Meeting of the European-Materials-Research-Society, Publisher: ELSEVIER SCIENCE SA, Pages: 399-405, ISSN: 0921-5107

Conference paper

Tok ES, Zhang J, Kamiya I, Xie MH, Neave JH, Joyce BAet al., 2001, Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries, International Symposium on the Science of Surface and Nanostructures, Publisher: WORLD SCIENTIFIC PUBL CO PTE LTD, Pages: 509-511, ISSN: 0218-625X

Conference paper

Kawaguchi K, Koh S, Shiraki Y, Zhang Jet al., 2001, Fabrication of strain-balanced Si<sub>0.73</sub>Ge<sub>0.27</sub>/Si distributed Bragg reflectors on Si substrates, APPLIED PHYSICS LETTERS, Vol: 79, Pages: 476-478, ISSN: 0003-6951

Journal article

Kawaguchi K, Shiraki Y, Usami N, Zhang J, Woods NJ, Breton G, Parry Get al., 2001, Fabrication of strain-balanced Si/Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i> multiple quantum wells on Si<sub>1-<i>y</i></sub>Ge<i><sub>y</sub></i> virtual substrates and their optical properties, APPLIED PHYSICS LETTERS, Vol: 79, Pages: 344-346, ISSN: 0003-6951

Journal article

Hartell AD, Tok ES, Zhang J, 2001, The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001), 11th International Conference on Molecular Beam Epitaxy (MBE-XI), Publisher: ELSEVIER SCIENCE BV, Pages: 729-734, ISSN: 0022-0248

Conference paper

Woods NJ, Breton G, Graoui H, Zhang Jet al., 2001, Modified GSMBE for higher growth rate and non-selective growth, 11th International Conference on Molecular Beam Epitaxy (MBE-XI), Publisher: ELSEVIER SCIENCE BV, Pages: 735-739, ISSN: 0022-0248

Conference paper

Dunbar A, Bangert U, Dawson P, Halsall M, Shiraki Y, Miura M, Berbezier I, Joyce BA, Zhang Jet al., 2001, Structural, compositional and optical properties of self-organised Ge quantum dots, International Conference on Semiconductor Quantum Dots (QD2000), Publisher: WILEY-V C H VERLAG GMBH, Pages: 265-269, ISSN: 0370-1972

Conference paper

Tok ES, Hartell AD, Zhang J, 2001, Kinetics of Si growth from hydride precursors on As-passivated Si(001) surface, APPLIED PHYSICS LETTERS, Vol: 78, Pages: 919-921, ISSN: 0003-6951

Journal article

Vernon-Parry KD, Abd-El-Rahman KF, Brough I, Evans-Freeman JH, Zhang J, Peaker ARet al., 2001, The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures, Spring Meeting of the European-Materials-Research-Society, Publisher: ELSEVIER SCI LTD, Pages: 121-123, ISSN: 1369-8001

Conference paper

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