Imperial College London
Prof. Jing Zhang

Prof. Jing Zhang

Faculty of Natural Sciences, Department of Physics

Academic Visitor
 
 
 
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Contact

 

+44 (0)20 7594 7594jing.zhang Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

910Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

195 results found

Breton G, Woods N, Graoui H, Harris JJ, Zhang Jet al., 2000, Selective and non-selective growth by GSMBE/ULPCVD for heterojunction bipolar transistors, Spring Meeting of the European-Materials-Research-Society, Publisher: ELSEVIER SCIENCE SA, Pages: 120-123, ISSN: 0040-6090

Conference paper

Zheng YJ, Engstrom JR, Zhang J, Schellinger A, Joyce BAet al., 2000, The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane, SURFACE SCIENCE, Vol: 470, Pages: 131-140, ISSN: 0039-6028

Journal article

Steans PH, Neave JH, Bell GR, Zhang J, Joyce BA, Jones TSet al., 2000, A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURFACE SCIENCE, Vol: 459, Pages: 277-286, ISSN: 0039-6028

Journal article

Miura M, Hartmann JM, Zhang J, Joyce B, Shiraki Yet al., 2000, Formation process and ordering of self-assembled Ge islands, 1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si), Publisher: ELSEVIER SCIENCE SA, Pages: 104-107, ISSN: 0040-6090

Conference paper

Hartmann JM, Gallas B, Ferguson R, Fernàndez J, Zhang J, Harris JJet al., 2000, Gas-source molecular beam epitaxy of SiGe virtual substrates:: I.: Growth kinetics and doping, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 15, Pages: 362-369, ISSN: 0268-1242

Journal article

Hartmann JM, Gallas B, Zhang J, Harris JJet al., 2000, Gas-source molecular beam epitaxy of SiGe virtual substrates: II. Strain relaxation and surface morphology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 15, Pages: 370-377, ISSN: 0268-1242

Journal article

Tok ES, Price RW, Taylor AG, Zhang Jet al., 2000, Oscillatory optical second-harmonic generation from Si(001) surface during thin-film epitaxy, APPLIED PHYSICS LETTERS, Vol: 76, Pages: 933-935, ISSN: 0003-6951

Journal article

Tok ES, Woods NJ, Zhang J, 2000, RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence, 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-7), Publisher: ELSEVIER SCIENCE BV, Pages: 321-326, ISSN: 0022-0248

Conference paper

Price RW, Tok ES, Zhang J, 2000, Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface, 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-7), Publisher: ELSEVIER, Pages: 306-310, ISSN: 0022-0248

Conference paper

Tok ES, Woods NJ, Price RW, Taylor AG, Zhang Jet al., 2000, Optical second harmonic generation studies of epitaxial growth of Si and SiGe, 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-7), Publisher: ELSEVIER SCIENCE BV, Pages: 297-301, ISSN: 0022-0248

Conference paper

Ekins-Daukes NJ, Zhang J, Bushnell DB, Barnham KWJ, Mazzer M, Roberts JSet al., 2000, Strain-balanced materials for high-efficiency solar cells, 28th IEEE Photovoltaic Specialists Conference, Publisher: IEEE, Pages: 1273-1276, ISSN: 0160-8371

Conference paper

Zhang J, Tok ES, Breton G, Woods NJet al., 2000, Thin film epitaxy on Si for microelectronics, Conference on Advanced Microelectronic Processing Techniques, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, Pages: 1-8, ISSN: 0277-786X

Conference paper

Gallas B, Hartmann JM, Breton G, Harris JJ, Zhang J, Joyce BAet al., 1999, Influence of doping on facet formation at the SiO<sub>2</sub>/Si interface, SURFACE SCIENCE, Vol: 440, Pages: 41-48, ISSN: 0039-6028

Journal article

Hartmann JM, Gallas B, Zhang J, Harris JJ, Joyce BAet al., 1999, Strain-balanced Si SiGe short period superlattices: Disruption of the surface crosshatch, JOURNAL OF APPLIED PHYSICS, Vol: 86, Pages: 845-849, ISSN: 0021-8979

Journal article

Gallas B, Hartmann JM, Berbezier I, Abdallah M, Zhang J, Harris JJ, Joyce BAet al., 1999, Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers, 10th International Conference on Molecular Beam Epitaxy (MBE-X), Publisher: ELSEVIER SCIENCE BV, Pages: 547-550, ISSN: 0022-0248

Conference paper

Steans PH, Neave JH, Zhang J, Tok ES, Bell GR, Joyce BA, Jones TSet al., 1999, Re-entrant behaviour in GaAs(111)A homoepitaxy, 10th International Conference on Molecular Beam Epitaxy (MBE-X), Publisher: ELSEVIER SCIENCE BV, Pages: 198-201, ISSN: 0022-0248

Conference paper

Price RW, Tok ES, Zhang J, 1999, Probing the disilane adsorption kinetics: An alternative approach, PHYSICAL REVIEW B, Vol: 59, Pages: R5292-R5295, ISSN: 1098-0121

Journal article

Zhang J, Lees AK, Schellinger A, Engstrom JR, Hsieh ML, Zettler JT, Taylor AG, Joyce BAet al., 1998, Kinetics and dynamics of Si GSMBE studied by reflectance anisotropy spectroscopy, 17th European Conference on Surface Science, Publisher: ELSEVIER SCIENCE BV, Pages: 480-486, ISSN: 0039-6028

Conference paper

Xie MH, Zhang J, Fernandez JM, Lees AK, Joyce BAet al., 1998, Arsenic doping kinetics in silicon during gas source molecular beam epitaxy, SURFACE SCIENCE, Vol: 397, Pages: 164-169, ISSN: 0039-6028

Journal article

Joyce BA, Zhang J, Taylor AG, Lees AKet al., 1998, A reflection high energy electron diffraction-reflectance anisotropy spectroscopy study of silicon growth dynamics during gas source molecular beam epitaxy from silanes, Surface Review and Letters, Vol: 5, Pages: 761-767, ISSN: 0218-625X

Journal article

Tok ES, Jones TS, Neave JH, Zhang J, Joyce BAet al., 1997, Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?, APPLIED PHYSICS LETTERS, Vol: 71, Pages: 3278-3280, ISSN: 0003-6951

Journal article

Tok ES, Neave JH, Fahy MR, Allegretti FE, Zhang J, Jones TS, Joyce BAet al., 1997, Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy, 2nd International Workshop on Growth, Characterization and Exploitation of Epitaxial Compound Semiconductor on Novel Index Surfaces (NIS 96), Publisher: ELSEVIER ADVANCED TECHNOLOGY, Pages: 833-839, ISSN: 0026-2692

Conference paper

Zhang J, Naji OP, Steans P, Tejedor P, Kaneko T, Jones TS, Joyce BAet al., 1997, Modulated-beam studies of the layer-by-layer etching of GaAs(001) using AsBr3: identification of the reaction mechanism, 9th International Conference on Molecular Beam Epitaxy (MBE-IX), Publisher: ELSEVIER SCIENCE BV, Pages: 1284-1288, ISSN: 0022-0248

Conference paper

Mizushima K, Vvedensky DD, Smilauer P, Zangwill A, Zhang J, Joyce BAet al., 1997, Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane, 9th International Conference on Molecular Beam Epitaxy (MBE-IX), Publisher: ELSEVIER SCIENCE BV, Pages: 509-513, ISSN: 0022-0248

Conference paper

Xie MH, Lees AK, Fernandez JM, Zhang J, Joyce BAet al., 1997, Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, Vol: 173, Pages: 336-342, ISSN: 0022-0248

Journal article

Tok ES, Neave JH, Zhang J, Joyce BA, Jones TSet al., 1997, Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited, SURFACE SCIENCE, Vol: 374, Pages: 397-405, ISSN: 0039-6028

Journal article

Tok ES, Neave JH, Allegretti FE, Zhang J, Jones TS, Joyce BAet al., 1997, Incorporation kinetics of As-2 and As-4 on GaAs(110), SURFACE SCIENCE, Vol: 371, Pages: 277-288, ISSN: 0039-6028

Journal article

Xie MH, Zhang J, Lees A, Fernandez JM, Joyce BAet al., 1996, Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms, SURFACE SCIENCE, Vol: 367, Pages: 231-237, ISSN: 0039-6028

Journal article

Fernandez JM, Hart L, Zhang XM, Xie MH, Zhang J, Joyce BAet al., 1996, Epitaxial growth mode and silicon/silicon-germanium heterointerfaces, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol: 7, Pages: 321-325, ISSN: 0957-4522

Journal article

Fernandez JM, Hart L, Zhang XM, Xie MH, Zhang J, Joyce BAet al., 1996, Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness, 5th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-5), Publisher: ELSEVIER SCIENCE BV, Pages: 241-247, ISSN: 0022-0248

Conference paper

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