Publications
195 results found
Joyce BA, Fernandez JM, Xie MH, et al., 1996, Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy, 5th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-5), Publisher: ELSEVIER SCIENCE BV, Pages: 214-222, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 11
Zhang J, Lees AK, Taylor AG, et al., 1996, In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy, 5th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-5), Publisher: ELSEVIER SCIENCE BV, Pages: 40-46, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 5
Naji O, Zhang J, Kaneko T, et al., 1996, A detailed time of flight study of the cracking pattern of trimethylgallium; Implications for MOMBE growth, 5th International Conference on Chemical Beam Epitaxy and Related Growth Techniques (ICCBE-5), Publisher: ELSEVIER SCIENCE BV, Pages: 58-65, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 4
Zhang J, Taylor AG, Lees AK, et al., 1996, Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy, PHYSICAL REVIEW B, Vol: 53, Pages: 10107-10115, ISSN: 1098-0121
- Author Web Link
- Cite
- Citations: 27
Zhang, Jing, 1996, Surface Structure of GaAs, Properties of Gallium Arsenide, Editors: Brozel, Stillman, London, Publisher: INSPEC, Institute of Electrical Engineers, Pages: 455-462, ISBN: 9780852968857
Matsumura A, Fernandez JM, Thornton TJ, et al., 1996, Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy, 7th International Conference on Modulated Semiconductor Structures (MSS-7), Publisher: PERGAMON-ELSEVIER SCIENCE LTD, Pages: 399-403, ISSN: 0038-1101
- Author Web Link
- Cite
- Citations: 6
Matsumura A, Thornton TJ, Fernandez JM, et al., 1995, Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy, 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, Publisher: ELSEVIER SCIENCE BV, Pages: 373-377, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 8
Pemble ME, Shukla N, Turner AR, et al., 1995, Reflectance anisotropy from Non-III-V systems: Si and SiGe growth on (001) Si and adsorbate-induced reconstruction of Cu(110), US/European Workshop on Optical Characterization of Electronic Materils, Publisher: AKADEMIE VERLAG GMBH, Pages: 61-70, ISSN: 0031-8965
- Author Web Link
- Cite
- Citations: 8
FERNANDEZ JM, MATSUMURA A, ZHANG XM, et al., 1995, 2-DIMENSIONAL ELECTRON GASES IN SIGE/SI HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol: 6, Pages: 330-335, ISSN: 0957-4522
- Author Web Link
- Cite
- Citations: 22
MATSUMURA A, FERNANDEZ JM, THORNTON TJ, et al., 1995, CHARACTERIZATION OF N-CHANNEL SI/SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 10, Pages: 1247-1252, ISSN: 0268-1242
- Author Web Link
- Cite
- Citations: 9
ZHANG J, ZHANG XM, MATSUMURA A, et al., 1995, GROWTH AND CHARACTERIZATION OF SI/SIGE MICROSTRUCTURES ON PATTERNED SI SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, 8th International Conference on Molecular Beam Epitaxy, Publisher: ELSEVIER SCIENCE BV, Pages: 950-954, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 1
ZHANG J, TAYLOR AG, FERNANDEZ JM, et al., 1995, REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SI AND SIGE ON SI(001), 8th International Conference on Molecular Beam Epitaxy, Publisher: ELSEVIER SCIENCE BV, Pages: 1015-1019, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 3
TURNER AR, PEMBLE ME, FERNANDEZ JM, et al., 1995, REAL-TIME OBSERVATION OF REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM-EPITAXY GROWTH SI AND SIGE ON SI(001), PHYSICAL REVIEW LETTERS, Vol: 74, Pages: 3213-3216, ISSN: 0031-9007
- Author Web Link
- Cite
- Citations: 32
FERNANDEZ JM, XIE MH, MATSUMURA A, et al., 1995, ARSENIC INCORPORATION AND DOPING BEHAVIOR IN SILICON AND SIGE EPITAXIAL LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, 1st International Conference on Materials for Microelectronics, Publisher: INST MATERIALS, Pages: 396-399, ISSN: 0267-0836
- Author Web Link
- Cite
- Citations: 5
FERNANDEZ JM, XIE MH, MATSUMURA A, et al., 1995, Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy, 1st International Conference on Materials for Microelectronics, Pages: 396-399
The incorporation of As into epitaxial Si and SiGe grown by gas source molecular beam epitaxy using disilane (Si2H6), germane (GeH4), and arsine (AsH3) as hydride sources has been investigated Reflection high energy electron diffraction (RHEED) studies, secondary ion mass spectroscopy (SIMS) profiles, and electrochemical capacitance voltage (ECV) analyses were used to characterise As incorporation. The As is found to show surface segregation with a Gibbs energy of segregation of 0.45 eV at 600 degrees C in Si and 0.30 eV at 560 degrees C in SiGe as determined from RHEED intensity oscillation measurements of the growth rate variation on As saturated surfaces. Competing segregation between Ge and As in As doped SiGe causes an increase in the Ge concentration in the alloy of approximately 10% relative to that of the undoped alloy. Whereas the equilibrium As concentration attainable in Si is of the order of 6 x 10(17) cm(-3), it can reach values higher than 10(19) cm(-3) in SiGe for equivalent partial pressure ratios of AsH3 to Si2H6 and/or GeH4. For these concentration levels and growth conditions SIMS and ECV data indicate a unity activation ratio for As in these epitaxial films.
MATSUMURA A, PRASAD RS, THORNTON TJ, et al., 1995, Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy, 21st International Symposium on Compound Semiconductors, Pages: 319-322
We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using arsenic as an n-type dopant. The layers are characterised by TEM and SIMS analysis, and magnetotransport measurements. The SIMS analysis shows an arsenic concentration in excess of 10(19) cm(-3) along with strong surface segregation. Pronounced Shubnikov-de Haas oscillations were observed in the magnetotransport measurements. Mobilities in the two dimensional electron gas were determined to be around 15,000 cm(2)/Vs.
Lee WJ, Staton-Bevan AE, Russell JD, et al., 1995, Microstructural investigation of Si1-xGex/Si(001) MODFET structures grown by gas-source MBE, Oxford, 20-23 March 1995, Publisher: IOP Bristol 1996, Pages: 617-620
MATSUMURA A, PRASAD RS, THORNTON TJ, et al., 1995, SI/SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, 21st International Symposium on Compound Semiconductors, Publisher: IOP PUBLISHING LTD, Pages: 319-322, ISSN: 0951-3248
XIE MH, ZHANG J, MOKLER SM, et al., 1994, GROWTH DYNAMICS STUDIED BY RHEED DURING SI/GE EPITAXY FROM GASEOUS HYDRIDES, SURFACE SCIENCE, Vol: 320, Pages: 259-270, ISSN: 0039-6028
- Author Web Link
- Cite
- Citations: 26
ZHANG J, MARINOPOULOU A, HARTUNG J, et al., 1994, GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, 40th National Symposium of the American-Vacuum-Society, Publisher: AMER INST PHYSICS, Pages: 1139-1141, ISSN: 0734-2101
- Author Web Link
- Cite
- Citations: 23
FAWCETT PN, NEAVE JH, ZHANG J, et al., 1994, STUDY OF THE EPITAXIAL-GROWTH OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, 40th National Symposium of the American-Vacuum-Society, Publisher: AMER INST PHYSICS, Pages: 1201-1203, ISSN: 0734-2101
- Author Web Link
- Cite
- Citations: 15
OHTANI N, MOKLER S, XIE MH, et al., 1994, SURFACE HYDROGEN EFFECTS ON GE SURFACE SEGREGATION DURING SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY, 5th International Symposium on Silicon Molecular Beam Epitaxy (SIMBE-5), at the 1993 International Conference on Solid State Devices and Materials (SSDM 93), Publisher: JAPAN J APPLIED PHYSICS, Pages: 2311-2316, ISSN: 0021-4922
- Author Web Link
- Cite
- Citations: 21
JOYCE BA, OHTANI N, MOKLER SM, et al., 1993, APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE, U.S. Japan Seminar on Surface Characterization by Electron Diffraction, Reflection Electron Microscopy and Holography, Publisher: ELSEVIER SCIENCE BV, Pages: 399-407, ISSN: 0039-6028
- Author Web Link
- Cite
- Citations: 7
FAWCETT PN, NEAVE JH, ZHANG J, et al., 1993, THE OBSERVATION OF MONOLAYER AND BILAYER GROWTH DURING THE DEPOSITION OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, SURFACE SCIENCE, Vol: 296, Pages: 67-74, ISSN: 0039-6028
- Author Web Link
- Cite
- Citations: 16
ZHANG X, PASHLEY DW, NEAVE JH, et al., 1993, REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY, JOURNAL OF CRYSTAL GROWTH, Vol: 132, Pages: 331-334, ISSN: 0022-0248
- Author Web Link
- Cite
- Citations: 16
ARMSTRONG SR, PEMBLE ME, TAYLOR AG, et al., 1993, REFLECTANCE ANISOTROPY AS A SURFACE SCIENCE PROBE OF THE GROWTH OF INAS ON (001) GAAS BY MOLECULAR-BEAM EPITAXY, APPLIED PHYSICS LETTERS, Vol: 63, Pages: 503-505, ISSN: 0003-6951
- Author Web Link
- Cite
- Citations: 6
ARMSTRONG SR, HOARE RD, PEMBLE ME, et al., 1993, OPTICAL 2ND-HARMONIC GENERATION STUDIES OF THE NATURE OF THE OXIDE-COVERED AND CLEAN C(4X4) AND (2X4) RECONSTRUCTED GAAS(001) SURFACES, SURFACE SCIENCE, Vol: 291, Pages: L751-L755, ISSN: 0039-6028
- Author Web Link
- Cite
- Citations: 11
MOKLER SM, OHTANI N, XIE MH, et al., 1993, SURFACE STUDIES DURING GROWTH OF SI1-XGEX/SI FROM GASEOUS SI AND GE HYDRIDES, 12TH NORTH AMERICAN CONF ON MOLECULAR BEAM EPITAXY, Publisher: AMER INST PHYSICS, Pages: 1073-1076, ISSN: 1071-1023
- Author Web Link
- Cite
- Citations: 11
OHTANI N, MOKLER SM, XIE MH, et al., 1993, TRANSIENT GROWTH-RATE CHANGE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SI1-XGEX ALLOYS, APPLIED PHYSICS LETTERS, Vol: 62, Pages: 2042-2044, ISSN: 0003-6951
- Author Web Link
- Cite
- Citations: 5
OHTANI N, MOKLER SM, XIE MH, et al., 1993, RHEED INVESTIGATION OF GE SURFACE SEGREGATION DURING GAS SOURCE MBE OF SI/SI1-XGEX HETEROSTRUCTURES, SURFACE SCIENCE, Vol: 284, Pages: 305-314, ISSN: 0039-6028
- Author Web Link
- Cite
- Citations: 56
This data is extracted from the Web of Science and reproduced under a licence from Thomson Reuters. You may not copy or re-distribute this data in whole or in part without the written consent of the Science business of Thomson Reuters.