Publications
195 results found
GIBSON EM, FOXON CT, ZHANG J, et al., 1990, GALLIUM DESORPTION FROM GAAS AND (AL,GA)AS DURING MOLECULAR-BEAM EPITAXY GROWTH AT HIGH-TEMPERATURES, APPLIED PHYSICS LETTERS, Vol: 57, Pages: 1203-1205, ISSN: 0003-6951
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- Citations: 39
ZHANG J, NEAVE JH, JOYCE BA, et al., 1990, ON THE RHEED SPECULAR BEAM AND ITS INTENSITY OSCILLATION DURING MBE GROWTH OF GAAS, SURFACE SCIENCE, Vol: 231, Pages: 379-388, ISSN: 0039-6028
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- Citations: 57
JOYCE BA, ZHANG J, NEAVE JH, et al., 1988, THE APPLICATION OF RHEED INTENSITY EFFECTS TO INTERRUPTED GROWTH AND INTERFACE FORMATION DURING MBE GROWTH OF GAAS/(AL, GA)AS STRUCTURES, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Vol: 45, Pages: 255-260, ISSN: 0947-8396
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- Citations: 26
DOBSON PJ, JOYCE BA, NEAVE JH, et al., 1988, RHEED STUDIES OF SEMICONDUCTOR GROWTH BY MBE, VACUUM, Vol: 38, Pages: 422-423, ISSN: 0042-207X
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- Citations: 1
ZHANG J, NEAVE JH, DOBSON PJ, et al., 1987, EFFECTS OF DIFFRACTION CONDITIONS AND PROCESSES ON RHEED INTENSITY OSCILLATIONS DURING THE MBE GROWTH OF GAAS, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Vol: 42, Pages: 317-326, ISSN: 0947-8396
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- Citations: 128
DOBSON PJ, JOYCE BA, NEAVE JH, et al., 1987, CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE, JOURNAL OF CRYSTAL GROWTH, Vol: 81, Pages: 1-8, ISSN: 0022-0248
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- Citations: 125
JOYCE BA, DOBSON PJ, NEAVE JH, et al., 1986, SURFACE EFFECTS AND GROWTH DYNAMICS IN MBE OF III-V COMPOUNDS, SURFACE SCIENCE, Vol: 178, Pages: 110-123, ISSN: 0039-6028
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- Citations: 18
JOYCE BA, DOBSON PJ, NEAVE JH, et al., 1986, THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES, SURFACE SCIENCE, Vol: 174, Pages: 1-9, ISSN: 0039-6028
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- Citations: 41
LARSEN PK, DOBSON PJ, NEAVE JH, et al., 1986, DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES, SURFACE SCIENCE, Vol: 169, Pages: 176-196, ISSN: 0039-6028
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- Citations: 79
JOYCE BA, DOBSON PJ, NEAVE JH, et al., 1986, RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS, SURFACE SCIENCE, Vol: 168, Pages: 423-438, ISSN: 0039-6028
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- Citations: 133
NEAVE JH, DOBSON PJ, JOYCE BA, et al., 1985, REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS, APPLIED PHYSICS LETTERS, Vol: 47, Pages: 100-102, ISSN: 0003-6951
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- Citations: 670
JOYCE BA, NEAVE JH, DOBSON PJ, et al., 1985, A RHEED ARPES CORE LEVEL SPECTROSCOPIC EVALUATION OF THE STRUCTURE OF MBE-GROWN GAAS(001)-2X4 SURFACES, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol: 3, Pages: 562-562
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- Citations: 10
OHTANI N, MOKLER SM, XIE MH, et al., GROWTH OF SI1-XGEX HETEROSTRUCTURES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, INTERNATIONAL JOURNAL OF OPTOELECTRONICS, Vol: 9, Pages: 193-203, ISSN: 0952-5432
Joyce BA, Zhang J, Taylor AG, et al., In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy, ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS, Vol: 7, Pages: 215-224, ISSN: 1057-9257
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- Citations: 1
Joyce BA, Neave JH, Zhang J, et al., Growth of III-V compounds on vicinal planes by molecular beam epitaxy, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 5, Pages: 1147-1154
The dynamics of growth of lll-V compounds by molecular beam epitaxy can be evaluated experimentally using the temporal variation of the intensity of reflection high-energy electron diffraction patterns. The use of substrate surfaces which are slightly misoriented from an exact low-index plane (vicinal planes) enables direct measurements to be made of cation migration parameters, but a correct analysis requires both step anisotropy and nucleation on the terraces to be taken into account. The experimental results are strongly supported by Monte Carlo simulations of growth, especially with regard to growth mode changes and the anisotropy of cation incorporation at steps. The direct growth of quantum wires (structures giving quantum confinement of carriers in two dimensions) on vicinal planes has been achieved experimentally and it is shown here how the wire quality, as determined by its compositional integrity, can be obtained by the simulation technique. The effects of flux, temperature, misorientation direction and interruptions of growth on quality are demonstrated.
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