Imperial College London

Prof. Jing Zhang

Faculty of Natural SciencesDepartment of Physics

Academic Visitor
 
 
 
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Contact

 

+44 (0)20 7594 7594jing.zhang Website

 
 
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Assistant

 

Mrs Carolyn Dale +44 (0)20 7594 7579

 
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Location

 

910Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Califano:2007:10.1103/PhysRevB.75.045338,
author = {Califano, M and Vinh, NQ and Phillips, PJ and Ikonic, Z and Kelsall, RW and Harrison, P and Pidgeon, CR and Murdin, BN and Paul, DJ and Townsend, P and Zhang, J and Ross, IM and Cullis, AG},
doi = {10.1103/PhysRevB.75.045338},
journal = {PHYSICAL REVIEW B},
title = {Interwell relaxation times in <i>p</i>-Si/SiGe asymmetric quantum well structures:: Role of interface roughness},
url = {http://dx.doi.org/10.1103/PhysRevB.75.045338},
volume = {75},
year = {2007}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AU - Califano,M
AU - Vinh,NQ
AU - Phillips,PJ
AU - Ikonic,Z
AU - Kelsall,RW
AU - Harrison,P
AU - Pidgeon,CR
AU - Murdin,BN
AU - Paul,DJ
AU - Townsend,P
AU - Zhang,J
AU - Ross,IM
AU - Cullis,AG
DO - 10.1103/PhysRevB.75.045338
PY - 2007///
SN - 1098-0121
TI - Interwell relaxation times in <i>p</i>-Si/SiGe asymmetric quantum well structures:: Role of interface roughness
T2 - PHYSICAL REVIEW B
UR - http://dx.doi.org/10.1103/PhysRevB.75.045338
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000243895600100&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 75
ER -