Imperial College London
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DrJunJiang

Faculty of Engineering, Department of Mechanical Engineering

Senior Lecturer
 
 
 
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Contact

 

jun.jiang

 
 
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Location

 

523City and Guilds BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Luan:2021:10.1016/j.matdes.2021.109960,
author = {Luan, Q and Wang, J and Huang, Y and Balint, D and Jiang, J},
doi = {10.1016/j.matdes.2021.109960},
journal = {Materials and Design},
title = {How would the deformation bands affect recrystallization in pure aluminium?},
url = {http://dx.doi.org/10.1016/j.matdes.2021.109960},
volume = {209},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Deformation bands (DBs), formed after plastic deformation, are known to have an impact on the recrystallization (RX) process. The exact mechanisms of how DBs influence grain nucleation and grain growth remain unclear. In this paper, deformed single and multicrystal pure aluminium samples are annealed to explore the likely effects of DBs on the grain nucleation and the subsequent grain growth. Regarding the prediction of the recrystallized (RXed) texture, it is noticeable that the orientations of nucleated grains nearby DB are originated from the orientation in DB. Regarding the nucleated positions, it is demonstrated that potential nucleation sites are more likely located in DBs in comparison with the initial grain boundary. Regarding the rate of RX, the number of nucleated grains is also predicted to have a strong positive correlation with the area fraction of DBs, which would consequently affect the kinetics of the grain growth in the deformed microstructure. All the above observations imply that the RX process is strongly controlled by the ensemble characteristics of DBs rather than the initial grain boundaries.
AU  - Luan,Q
AU  - Wang,J
AU  - Huang,Y
AU  - Balint,D
AU  - Jiang,J
DO  - 10.1016/j.matdes.2021.109960
PY  - 2021///
SN  - 0264-1275
TI  - How would the deformation bands affect recrystallization in pure aluminium?
T2  - Materials and Design
UR  - http://dx.doi.org/10.1016/j.matdes.2021.109960
UR  - http://hdl.handle.net/10044/1/90630
VL  - 209
ER  -
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