Publications
200 results found
Fobelets K, Gaspari V, Velazquez-Perez JE, 2003, Calculation of the thermal noise of n-channel Si/SiGe MOSFETs using an hydrodynamic transport model, 14th workshop on modelling and simulation of electron devices, Barcelona, 16 - 17 October 2003
Jeamsaksiri W, Velázquez JE, Fobelets K, 2002, Optimised n-channel Si/SiGe HFETs design for <i>V</i><sub>TH</sub> shift immunity, SOLID-STATE ELECTRONICS, Vol: 46, Pages: 2241-2245, ISSN: 0038-1101
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- Citations: 3
Ferguson RS, Fobelets K, Cohen LF, 2002, Kelvin probe force microscopy of beveled semiconductors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol: 20, Pages: 2133-2136, ISSN: 2166-2746
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- Citations: 4
Li SM, Fobelets K, 2002, Si/SiGe <i>n</i>-channel modulation-doped field effect transistor on air, ELECTRONICS LETTERS, Vol: 38, Pages: 1064-1065, ISSN: 0013-5194
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- Citations: 1
Ferguson RS, Fobelets K, Cohen LF, et al., 2002, Bevelling technique for low surface roughness based on CMP, ELECTRONICS LETTERS, Vol: 38, Pages: 998-1000, ISSN: 0013-5194
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- Citations: 3
Fobelets K, Jeamsaksiri W, Hampson J, et al., 2002, Simulations of Si:SiGe MODFET analogue applications, INTERNATIONAL JOURNAL OF ELECTRONICS, Vol: 89, Pages: 593-602, ISSN: 0020-7217
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- Citations: 1
Olsen SH, O'Neill AG, Norris DJ, et al., 2002, Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 17, Pages: 655-661, ISSN: 0268-1242
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- Citations: 33
Fobelets K, Ferguson RS, Gaspari V, et al., 2002, Experimental study of depletion mode SiGe MOSFETs for low temperature operation, Firenze, Italy, IEEE European solid-state device research conference 2002, Italy, Publisher: IEEE, Pages: 555-558
Fobelets K, Ferguson RS, Gaspari V, et al., 2002, Experimental study of depletion mode SiGe MOSFETs for low temperature operation, Firenze, Italy, IEEE European solid-state device research conference 2002, Italy, Publisher: IEEE, Pages: 555-558
Vilches AM, Rahal M, Fobelets K, 2002, Monolithic AMS foundry BiCMOS SiGe HBT based PIN photodetector analysis for operation at 9 GBPS, Applied optics and optoelectronics conference, Cardiff, UK, 2 - 5 September 2002
Papavassiliou C, Fobelets K, Toumazou C, 2001, SiGe hetero-FETs potential for micropower applications, IEICE TRANSACTIONS ON ELECTRONICS, Vol: E84C, Pages: 1414-1422, ISSN: 0916-8524
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- Citations: 4
Papavassiliou C, Fobelets K, Toumazou C, 2001, SiGe hetero-FETs potential for micropower applications, IEICE Transactions on Electronics, Vol: E84-C, Pages: 1414-1422, ISSN: 0916-8524
Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostructure FET at the law power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
Velazquez-Perez JE, Jeamsaksiri W, Fobelets K, et al., 2001, Experimental and theoretical study of backgating in Si/SiGe modulation-doped field-effect transistors, CDE 2001, Granada, Spain
Ternent G, Edgar DL, Mclelland H, et al., 2000, Single stage amplifiers on a CMOS grade silicon substrate using a polymer interlayer dielectric with strained silicon MOSFETs, Pages: 19-20
The design of single stage amplifiers based on a metal gate Si/SiGe MOSFET process on a 1 Ohm cm silicon substrate is presented. The amplifier design is based on 0.3 μm gate length MOSFETs with fT of 19.9 GHz and fmax 21 GHz integrated with low loss coplanar waveguide transmission lines and high quality factor spiral inductors realised on a 15 μm thick polymer dielectric. The performance of the amplifier, currently in fabrication, will be presented.
Papavassiliou C, Fobelets K, Jeamsaksiri W, et al., 2000, Potential of SiGe Heterostructure FETs for Micropower Applications, TWHM'00 Japan
Velazquez JE, Jeamsaksiri W, Yeoh JC, et al., 2000, Design of nearly body-effect free Si/SiGe MODFETs, IEEE EDMO2000
Kiargamolchai S, Mironov OA, Parker EHC, et al., 1999, Mobility spectrum of high mobility 2DHG and 2DEG in Si-SiGe heterostructures, Prog. of 3rd Int. Conf. on Low Dimensional Structures and Devices
Papavassiliou C, Toumazou C, Tu S, et al., 1999, A Report on SiGe FET Circuit Design, DERA
Yeoh JC, Green PW, Thornton TJ, et al., 1998, MOS gated Si:SiGe quantum wells formed by anodic oxidation, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 13, Pages: 1442-1445, ISSN: 0268-1242
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- Citations: 7
Fobelets K, Borghs G, 1998, Influence of the undoped spacer layer thickness on DC characteristics of n-type GaAs MESFETS, Semiconductor Science and Technology, Vol: 13, Pages: 318-321
Gatzke C, Fobelets K, Rowe AC, et al., 1998, Hot electron effects in InAs/AlSb/GaSb quantum wells, 25th International Symposium on compound semiconductors (1998)
Thornton TJ, Kaya S, Green PW, et al., 1998, Miniband transport and interface scattering in high mobility Si:SIGe quantum wells telted by 2, 4, 6, and 10 degrees, Semiconductor Science and Technology
Yeoh JC, Green PW, Thornton TJ, et al., 1998, MOS Gated Si:SiGe Quantum Wells by Anodic Oxidation, Semiconductor Science and Technology, Vol: 13, Pages: 1442-1445
Gatzke C, Webb SJ, Fobelets K, et al., 1998, In-situ monitoring of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures using Raman spectroscopy, 24th IEEE International Symposium on Compound Semiconductors, Publisher: IOP PUBLISHING LTD, Pages: 337-340, ISSN: 0951-3248
Fobelets K, Jeamsaksiri W, Hampson J, et al., 1998, Si:SiGe MODFET current mirror, Electronics Letters, Vol: 34
Fobelets K, Jeamsaksiri W, Hampson J, et al., 1998, Si:SiGe MODFET current mirror, Electronics Letters, Vol: 34
Gatzke C, Webb SJ, Fobelets K, et al., 1998, In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures, Semiconductor Science and Technology, Vol: 13, Pages: 399-403
Gatzke C, Webb SJ, Fobelets K, et al., 1997, In-situ monitoring of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures using Raman spectroscopy, IEEE Electron Device Society: 24th International Symposium on Compound Semiconductors
Gatzke C, Fobelets K, Stradling RA, 1997, InAs/AlSb Fet studies, UK Antimonides consortium meeting DERA Malvern
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