Imperial College London
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ProfessorKristelFobelets

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Nanodevices
 
 
 
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Contact

 

+44 (0)20 7594 6236k.fobelets Website CV

 
 
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Assistant

 

Ms Susan Brace +44 (0)20 7594 6215

 
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Location

 

714Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Panteli:2021:10.1109/JSEN.2021.3074748,
author = {Panteli, C and Georgiou, P and Fobelets, K},
doi = {10.1109/JSEN.2021.3074748},
journal = {IEEE Sensors Journal},
title = {Reduced drift of CMOS ISFET pH sensors using graphene sheets},
url = {http://dx.doi.org/10.1109/JSEN.2021.3074748},
volume = {21},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Reduction of drift in Complementary Metal Oxide-Semiconductor (CMOS) Ion-Sensitive Field-Effect Transistor (ISFET) pH sensors is demonstrated using monolayer and multilayer graphene sheets. Graphene blocks the ion penetration in the CMOS passivation layers and provides the physisorption sites needed for electrical double layer formation allowing sensing. With an in-house polymer-assisted graphene transfer (PAGT) process, monolayer and multilayer graphene sheets were manually transferred on top of the sensing membrane of CMOS ISFET sensors on a 2 by 4 mm chip. Experiments with pH buffers on five different chips were performed to extract the average performance parameters of capacitive attenuation, trapped charge, sensitivity, drift and noise. The stretched exponential function, that describes dispersion processes in amorphous solids such as silicon dioxide and silicon nitride, was modified to model the dynamic drift behaviour and analyse the effect of graphene on the performance of the sensors. The results show that on average the graphene coated ISFET sensors experience about 50% reduction in drift amplitude, up to 3 times slower surface modification and perform overall better compared to the plain unmodified devices.
AU  - Panteli,C
AU  - Georgiou,P
AU  - Fobelets,K
DO  - 10.1109/JSEN.2021.3074748
PY  - 2021///
SN  - 1530-437X
TI  - Reduced drift of CMOS ISFET pH sensors using graphene sheets
T2  - IEEE Sensors Journal
UR  - http://dx.doi.org/10.1109/JSEN.2021.3074748
UR  - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000668948200066&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
UR  - https://ieeexplore.ieee.org/document/9411873
UR  - http://hdl.handle.net/10044/1/109278
VL  - 21
ER  -
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