Imperial College London
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ProfessorKristelFobelets

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Nanodevices
 
 
 
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Contact

 

+44 (0)20 7594 6236k.fobelets Website CV

 
 
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Assistant

 

Ms Susan Brace +44 (0)20 7594 6215

 
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Location

 

714Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Panteli:2018:10.1016/j.mee.2018.02.004,
author = {Panteli, C and Georgiou, P and Fobelets, K},
doi = {10.1016/j.mee.2018.02.004},
journal = {Microelectronic Engineering},
pages = {61--65},
title = {Performance improvement of commercial ISFET sensors using reactive ion etching},
url = {http://dx.doi.org/10.1016/j.mee.2018.02.004},
volume = {192},
year = {2018}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Reactive Ion Etching (RIE) is used to improve the performance of commercial Complementary Metal Oxide Semiconductor (CMOS) Ion-Sensitive Field-Effect Transistors (ISFETs) by thinning the top passivation layers inherent of the CMOS fabrication process. Using a combination of O2 and SF6 in 50% ratio, both polyimide and Si3N4 layers are etched in one etching step. Etching for different times we find the right remaining layer thickness for best ISFET performance to be ∼1 μm of SiO2. The results show an increase in pH sensitivity of 125%, a 5700% increase in passivation capacitance and a 96% reduction in capacitive attenuation. The RIE etch recipe can be used on multi-project wafers (MPW) to boost CMOS sensor performance.
AU  - Panteli,C
AU  - Georgiou,P
AU  - Fobelets,K
DO  - 10.1016/j.mee.2018.02.004
EP  - 65
PY  - 2018///
SN  - 0167-9317
SP  - 61
TI  - Performance improvement of commercial ISFET sensors using reactive ion etching
T2  - Microelectronic Engineering
UR  - http://dx.doi.org/10.1016/j.mee.2018.02.004
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000428828500010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/68769
VL  - 192
ER  -
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