117 results found
Ackermann J, Crawley D, Forshaw M, et al., 2003, Conductive polymer interconnections for three-dimensional computing structures, SURF SCI, Vol: 532-535, Pages: 1182-1186
Ackermann J, Videlot C, Nguyen TN, et al., 2003, Micro-patterning of self-supporting layers with conducting polymer wires for 3D-chip interconnection applications, APPL SURF SCI, Vol: 212-213, Pages: 411-416
Nikolic K, Forshaw M, Compano R, 2003, The Current Status of Nanoelectronic Devices, INTL J NANOSCIENCE, Vol: 2, Pages: 7-29
Nikolic K, Sadek A, Forshaw M, 2002, Fault-tolerant techniques for nanocomputers, NANOTECHNOLOGY, Vol: 13, Pages: 357-362
M Forshaw, D Crawley, K Nikolic, 2002, Three-dimensional nanocomputing structures and the problem of interconnectivity and fault-tolerance, 7th Intl. conf. on nanometer-scale science and technology and 21st European conf. on surface science
Nikolic K, Berzon D, Forshaw M, 2001, The impact of interconnection and dielectric materials on the time delay of scaled memory-adder systems, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 48, Pages: 1121-1126, ISSN: 0018-9383
Nikolic K, Forshaw M, 2001, The operational speed and power dissipation of scaled one-transistor RTD/HFET memories, INTERNATIONAL JOURNAL OF ELECTRONICS, Vol: 88, Pages: 453-462, ISSN: 0020-7217
Nikolic K, Berzon D, Forshaw M, 2001, Relative performance of three nanoscale devices - CMOS, RTDs and QCAs - against a standard computing task, NANOTECHNOLOGY, Vol: 12, Pages: 38-43, ISSN: 0957-4484
Nikolic K, Sadek A, Forshaw M, 2001, Architectures for reliable computing with unreliable nanodevices, IEEE-NANO 2001., Pages: 254-259
Nikolic K, Forshaw M, 2001, The relative success of nanoscale RTD, SET and EQCA devices as replacements for CMOS at the system level, IEEE-NANO 2001., Pages: 272-276
Nikolic K, Nikolic P, Sordan R, 1999, Conductance of quantum interference transistors in parallel and in series, SUPERLATTICE MICROST, Vol: 26, Pages: 47-55, ISSN: 0749-6036
We theoretically study the electronic conductance G and the current-voltage characteristics of two quantum interference transistors in parallel and in series. We use two different definitions of conductance, G similar to T and G similar to T/R, Neither can reproduce the classical additivity law in the case of coherent transport due to quantum interference for the elements in series and quasibound states when elements are in parallel. In the case of two transistors in series, we find that the quantity T/R only qualitatively better represents the additivity law, which is probably expected because this model avoids counting the contact resistance twice. However, for the parallel configuration of transistors, the conductance is almost additive for the majority of energies when G similar to T, except for the single-mode regime. Possible use of these configurations in digital electronics for basic logic functions is discussed. (C) 1999 Academic Press.
Nikolic K, Sordan R, 1998, Electronic transport in quantum waveguide systems with attached stubs, PHYSICAL REVIEW B, Vol: 58, Pages: 9631-9634, ISSN: 2469-9950
Nikolic K, Sordan R, 1998, Mesoscopic diode, MICROELEC ENGINEERING, Vol: 43-44, Pages: 527-532
Nikolic K, Sordan R, 1998, Magnetotransport in the quantum interference resonator, SOLID STATE PHENOMENA, Vol: 61-2, Pages: 239-242, ISSN: 1012-0394
K Nikolic, R Sordjan, 1998, Quantum Rectifier, 24th International Conf. on the Physics of Semiconductors
Nikolic K, Sordan R, 1997, Properties of a T-shaped quantum interference 'transistor' as an electronic device, 21st International Conference on Microelectronics, Publisher: IEEE, Pages: 335-338
Sordan R, Nikolic K, 1997, Room-temperature quantum-constriction rectifier, 21st International Conference on Microelectronics, Publisher: IEEE, Pages: 137-140
Sordan R, Nikolic K, 1996, Quantum-constriction rectifier., PHYS REV B, Vol: 54, Pages: 10332-10334, ISSN: 0163-1829
Sordan R, Nikolic K, 1996, The nonlinear transport regime of a T-shaped quantum interference transistor, APPLIED PHYSICS LETTERS, Vol: 68, Pages: 3599-3601, ISSN: 0003-6951
Nikolic K, Sordan R, 1995, Electronic transport properties of disordered quantum interference transistor, Pages: 713-716
We examine the quantum-mechanical transmission and I-V characteristics of real T-shape quantum interference resonator, with two basic types of disorder - impurities and rough boundaries. This system is interesting as a potential quantum transistor. The elastic scattering due to disorder, in general, decreases the conductance in comparison to the perfect system. However, we find that this behavior can be avoided in the single-mode regime, and the transmission could be even enhanced by the presence of repulsive impurity potential or boundary roughness. Disorder decreases the drain current in general, but it is useful in the switching regime because it enhances the separation between ON and OFF states. Therefore, the transistor switching function could be preserved in the single-mode regime even for the disordered samples.
Šordan R, Nikolić K, 1995, The nonlinear transport regime of a T-shaped quantum interference transistor, Applied Physics Letters, ISSN: 0003-6951
We present the current-voltage characteristics of a T-shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero-temperature I-V characteristics are with multiple peaks and exhibit regions of negative-differential resistance. The peak-to-valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor. © 1996 American Institute of Physics.
SORDAN R, NIKOLIC K, 1995, QUANTUM INTERFERENCE RESONATOR - EFFECTS OF DISORDER, PHYSICAL REVIEW B, Vol: 52, Pages: 9007-9014, ISSN: 2469-9950
NIKOLIC K, MACKINNON A, 1994, CONDUCTANCE AND CONDUCTANCE FLUCTUATIONS OF NARROW DISORDERED QUANTUM WIRES, PHYSICAL REVIEW B, Vol: 50, Pages: 11008-11017, ISSN: 2469-9950
NIKOLIC K, MACKINNON A, 1993, DENSITY OF STATES AND LOCALIZATION LENGTH IN COMPOSITIONALLY DISORDERED QUANTUM WIRES, PHYSICAL REVIEW B, Vol: 47, Pages: 6555-6565, ISSN: 0163-1829
NIKOLIC K, 1992, STEADY-STATES IN A COOLED PARA-GE PHOTOCONDUCTOR VIA THE LANDSBERG-SCHOLL-SHUKLA MODEL, SOLID STATE ELECTRON, Vol: 35, Pages: 671-675, ISSN: 0038-1101
Landsberg, Scholl and Shukla have recently proposed a new model for generation-recombination kinetics which can be used to explain the origin of chaos in semiconductors. In this paper, steady-states for the Landsberg-Scholl-Shukla (LSS) model are determined and compared with the steady-states arising from the classical (rate equation) model. In the case of cooled p-Ge, both models give a second-order nonequilibrium phase transition, from the nonconducting to the conducting state for the same value of control parameter A. This nonzero stable fixed point, in the case of the LSS model, can lose stability in a way which does not exist in the classical model. This leads to very significant differences between these two models. Furthermore, for the LSS model there is the possibility of extra fixed points appearing.
NIKOLIC K, MACKINNON A, 1992, COHERENT-POTENTIAL APPROXIMATION CALCULATIONS IN COMPOSITIONALLY DISORDERED QUANTUM WIRES - DENSITY OF STATES, JOURNAL OF PHYSICS-CONDENSED MATTER, Vol: 4, Pages: 2565-2576, ISSN: 0953-8984
Constandinou TG, Nikolic K, Toumazou C, Method and Apparatus for Optically Outputting Information from a Semiconductor Device
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