DrKonstantinNikolic

Sordan R, Nikolic K, 1996, The nonlinear transport regime of a T-shaped quantum interference transistor, APPLIED PHYSICS LETTERS, Vol: 68, Pages: 3599-3601, ISSN: 0003-6951

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Šordan R, Nikolić K, 1995, The nonlinear transport regime of a T-shaped quantum interference transistor, Applied Physics Letters, ISSN: 0003-6951

We present the current-voltage characteristics of a T-shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero-temperature I-V characteristics are with multiple peaks and exhibit regions of negative-differential resistance. The peak-to-valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor. © 1996 American Institute of Physics.

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Nikolic K, Sordan R, 1995, Electronic transport properties of disordered quantum interference transistor, Pages: 713-716

We examine the quantum-mechanical transmission and I-V characteristics of real T-shape quantum interference resonator, with two basic types of disorder - impurities and rough boundaries. This system is interesting as a potential quantum transistor. The elastic scattering due to disorder, in general, decreases the conductance in comparison to the perfect system. However, we find that this behavior can be avoided in the single-mode regime, and the transmission could be even enhanced by the presence of repulsive impurity potential or boundary roughness. Disorder decreases the drain current in general, but it is useful in the switching regime because it enhances the separation between ON and OFF states. Therefore, the transistor switching function could be preserved in the single-mode regime even for the disordered samples.

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SORDAN R, NIKOLIC K, 1995, QUANTUM INTERFERENCE RESONATOR - EFFECTS OF DISORDER, PHYSICAL REVIEW B, Vol: 52, Pages: 9007-9014, ISSN: 2469-9950

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• Citations: 13

NIKOLIC K, MACKINNON A, 1994, CONDUCTANCE AND CONDUCTANCE FLUCTUATIONS OF NARROW DISORDERED QUANTUM WIRES, PHYSICAL REVIEW B, Vol: 50, Pages: 11008-11017, ISSN: 2469-9950

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• Citations: 70

NIKOLIC K, MACKINNON A, 1993, DENSITY OF STATES AND LOCALIZATION LENGTH IN COMPOSITIONALLY DISORDERED QUANTUM WIRES, PHYSICAL REVIEW B, Vol: 47, Pages: 6555-6565, ISSN: 0163-1829

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• Citations: 27

NIKOLIC K, 1992, STEADY-STATES IN A COOLED PARA-GE PHOTOCONDUCTOR VIA THE LANDSBERG-SCHOLL-SHUKLA MODEL, SOLID STATE ELECTRON, Vol: 35, Pages: 671-675, ISSN: 0038-1101

Landsberg, Scholl and Shukla have recently proposed a new model for generation-recombination kinetics which can be used to explain the origin of chaos in semiconductors. In this paper, steady-states for the Landsberg-Scholl-Shukla (LSS) model are determined and compared with the steady-states arising from the classical (rate equation) model. In the case of cooled p-Ge, both models give a second-order nonequilibrium phase transition, from the nonconducting to the conducting state for the same value of control parameter A. This nonzero stable fixed point, in the case of the LSS model, can lose stability in a way which does not exist in the classical model. This leads to very significant differences between these two models. Furthermore, for the LSS model there is the possibility of extra fixed points appearing.

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NIKOLIC K, MACKINNON A, 1992, COHERENT-POTENTIAL APPROXIMATION CALCULATIONS IN COMPOSITIONALLY DISORDERED QUANTUM WIRES - DENSITY OF STATES, JOURNAL OF PHYSICS-CONDENSED MATTER, Vol: 4, Pages: 2565-2576, ISSN: 0953-8984

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• Citations: 7

Constandinou TG, Nikolic K, Toumazou C, Method and Apparatus for Optically Outputting Information from a Semiconductor Device

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