Imperial College London
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Dr Shelly Conroy

Faculty of Engineering, Department of Materials

Lecturer in Functional Thin Films and Microscopy
 
 
 
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Contact

 

m.conroy Website

 
 
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Location

 

Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{McConville:2020:10.1002/adfm.202000109,
author = {McConville, JPV and Lu, H and Wang, B and Tan, Y and Cochard, C and Conroy, M and Moore, K and Harvey, A and Bangert, U and Chen, LQ and Gruverman, A and Gregg, JM},
doi = {10.1002/adfm.202000109},
journal = {Advanced Functional Materials},
title = {Ferroelectric Domain Wall Memristor},
url = {http://dx.doi.org/10.1002/adfm.202000109},
volume = {30},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
AU  - McConville,JPV
AU  - Lu,H
AU  - Wang,B
AU  - Tan,Y
AU  - Cochard,C
AU  - Conroy,M
AU  - Moore,K
AU  - Harvey,A
AU  - Bangert,U
AU  - Chen,LQ
AU  - Gruverman,A
AU  - Gregg,JM
DO  - 10.1002/adfm.202000109
PY  - 2020///
SN  - 1616-301X
TI  - Ferroelectric Domain Wall Memristor
T2  - Advanced Functional Materials
UR  - http://dx.doi.org/10.1002/adfm.202000109
VL  - 30
ER  -
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