Imperial College London
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Dr Matyas Daboczi

Faculty of Engineering, Department of Chemical Engineering

Research Associate
 
 
 
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Contact

 

m.daboczi Website

 
 
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Location

 

614Roderic Hill BuildingSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Du:2019:10.1039/c9ta03896e,
author = {Du, T and Xu, W and Daboczi, M and Kim, J and Xu, S and Lin, C-T and Kang, H and Lee, K and Heeney, MJ and Kim, J-S and Durrant, JR and McLachlan, MA},
doi = {10.1039/c9ta03896e},
journal = {Journal of Materials Chemistry A},
pages = {18971--18979},
title = {p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching},
url = {http://dx.doi.org/10.1039/c9ta03896e},
volume = {7},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities.
AU  - Du,T
AU  - Xu,W
AU  - Daboczi,M
AU  - Kim,J
AU  - Xu,S
AU  - Lin,C-T
AU  - Kang,H
AU  - Lee,K
AU  - Heeney,MJ
AU  - Kim,J-S
AU  - Durrant,JR
AU  - McLachlan,MA
DO  - 10.1039/c9ta03896e
EP  - 18979
PY  - 2019///
SN  - 2050-7488
SP  - 18971
TI  - p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
T2  - Journal of Materials Chemistry A
UR  - http://dx.doi.org/10.1039/c9ta03896e
UR  - https://pubs.rsc.org/en/content/articlelanding/2019/TA/C9TA03896E#!divAbstract
UR  - http://hdl.handle.net/10044/1/72927
VL  - 7
ER  -
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