Publications
133 results found
McKerricher G, Maller R, Mohammad V, et al., 2017, Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink, Ceramics International, Vol: 43, Pages: 9846-9853, ISSN: 0272-8842
© 2017 Elsevier Ltd and Techna Group S.r.l. There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al 2 O 3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al 2 O 3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al 2 O 3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al 2 O 3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al 2 O 3 films ~120 nm thick, with roughness of < 2 nm. Metal-insulator-metal capacitors, show high capacitance density > 450 pF/mm 2 , and quality factors of ~200. The devices have high break down voltages, > 25 V, with extremely low leakage currents, < 2×10 −9 A/cm 2 at 1 MV/cm. The capacitors compare well with similar Al 2 O 3 devices fabricated by atomic layer deposition.
Du T, Burgess C, Kim J, et al., 2017, Formation, location and beneficial role of PbI2 in lead halide perovskite solar cells, Sustainable Energy and Fuels, Vol: 1, Pages: 119-126, ISSN: 2398-4902
Here we report the investigation of controlled PbI2 secondary phase formation in CH3NH3PbI3 (MAPI) photovoltaics through post-deposition thermal annealing, highlighting the beneficial role of PbI2 on device performance. Using high-resolution transmission electron microscopy we show the location of PbI2 within the active layer and propose a nucleation and growth mechanism. We discover that during the annealing that PbI2 forms mainly in the grain boundary regions of the MAPI films and that at certain temperatures the PbI2 formed can be highly beneficial to device performance – reducing current–voltage hysteresis and increasing the power conversion efficiency. Our analysis shows that the MAPI grain boundaries as susceptible areas that, under thermal loading, initiate the conversion of MAPI into PbI2.
Semple J, Wyatt-Moon G, Georgiadou DG, et al., 2017, Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 64, Pages: 1973-1980, ISSN: 0018-9383
Jagadamma LK, Hu H, Kim T, et al., 2016, Solution-processable MoO<inf>x</inf> nanocrystals enable highly efficient reflective and semitransparent polymer solar cells, Nano Energy, Vol: 28, Pages: 277-287, ISSN: 2211-2855
© 2016 Elsevier Ltd Solution-manufacturing of organic solar cells with best-in-class power conversion efficiency (PCE) will require all layers to be solution-coated without compromising solar cell performance. To date, the hole transporting layer (HTL) deposited on top of the organic bulk heterojunction layer in the inverted architecture is most commonly an ultrathin ( < 10 nm) metal oxide layer prepared by vacuum-deposition. Here, we show that an alcohol-based nanocrystalline MoO x suspension with carefully controlled nanocrystal (NC) size can yield state of the art reflective and semitransparent solar cells. Using NCs smaller than the target HTL thickness (∼10 nm) can yield compact, pinhole-free films which result in highly efficient polymer:fullerene bulk heterojunction (BHJ) solar cells with PCE=9.5%. The solution processed HTL is shown to achieve performance parity with vacuum-evaporated HTLs for several polymer:fullerene combinations and is even shown to work as hole injection layer in polymer light emitting diodes (PLED). We also demonstrate that larger MoO x NCs (30–50 nm) successfully composite MoO x with Ag nanowires (NW) to form a highly conducting, transparent top anode with exceptional contact properties. This yields state-of-the-art semitransparent polymer: fullerene solar cells with PCE of 6.5% and overall transmission > 30%. The remarkable performance of reflective and semitransparent OPVs is due to the uncommonly high fill factors achieved using a carefully designed strategy for implementation of MoO x nanocrystals as HTL materials.
Hota MK, Hedhili MN, Wehbe N, et al., 2016, Multistate resistive switching memory for synaptic memory applications, Advanced Materials Interfaces, Vol: 3, ISSN: 2196-7350
Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers.
Maller R, Porte Y, Alshareef H, et al., 2016, Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis, Journal of Materials Chemistry C, Vol: 4, Pages: 5953-5961, ISSN: 2050-7534
The measured structural, optical and electrical properties of Al, Ga and In doped ZnOfilms deposited using spray pyrolysis are reported over the doping range 0.1 - 3 at%.Over the entire doping series highly transparent, polycrystalline thin films areprepared. Using AC Hall as a measurement technique we probe the electronicproperties of our doped films, deconvoluting the impact of doping on the measuredcharge carrier concentrations and Hall mobility. We focus on the low doping rangei.e. 0.1 - 1 at%, where we observe unexpected variations in charge carrierconcentration and mobility and propose a mechanism to explain our observations. Inthis doping range highly resistive films are formed hence we highlight AC Hall as areliable and highly reproducible technique for analysing electrical properties andsubsequently elucidate the doping mechanisms. The implementation of a simple,post-deposition heat treatment demonstrated on our AZO results in typical films withcharge carrier concentrations exceeding > 1019 cm-3, and electron mobilities >10 cm2/Vs and stability exceeding 180 days. We describe in detail the nature of thedefect chemistry and the role of intrinsic defects and show, that despite significantvariations in dopant species and grain boundary concentrations, that the defectchemistry dominates the electrical characteristics.
Mclachlan MA, Ratcliff EL, 2016, Metal Oxide Heterointerfaces in Hybrid Electronic Platforms, Advanced Materials, Vol: 28, Pages: 3801-3801, ISSN: 0935-9648
Green J, Han Y, Kilmurray R, et al., 2016, An Air-Stable Semiconducting Polymer Containing Dithieno[3,2-b:2′,3′-d]arsole, Angewandte Chemie - International Edition, Vol: 55, Pages: 7148-7151, ISSN: 1433-7851
Arsole-containing conjugated polymers are a practically unexplored class of materials despite the high interest in their phosphole analogues. Herein we report the synthesis of the first dithieno[3,2-b;2′,3′-d]arsole derivative, and demonstrate that it is stable to ambient oxidation in its +3 oxidation state. A soluble copolymer is obtained by a palladium-catalyzed Stille polymerization and demonstrated to be a p-type semiconductor with promising hole mobility, which was evaluated by field-effect transistor measurements.
Green JP, Han Y, Kilmurray R, et al., 2016, An air-stable semiconducting polymer containing Dithieno[3,2- b :2′,3′- d ]arsole, Angewandte Chemie, Vol: 128, Pages: 7264-7267, ISSN: 0044-8249
Arsole-containing conjugated polymers are a practically unexplored class of materials despite the high interest in their phosphole analogues. Herein we report the synthesis of the first dithieno[3,2-b;2′,3′-d]arsole derivative, and demonstrate that it is stable to ambient oxidation in its +3 oxidation state. A soluble copolymer is obtained by a palladium-catalyzed Stille polymerization and demonstrated to be a p-type semiconductor with promising hole mobility, which was evaluated by field-effect transistor measurements.
Campbell AJ, Rawcliffe R, Guite A, et al., 2016, Charge-carrier density independent mobility in amorphous fluorene-triarylamine copolymers, Advanced Functional Materials, Vol: 26, Pages: 3720-3729, ISSN: 1616-3028
A charge-carrier density dependent mobility has been predicted for amorphous, glassyenergetically-disordered semiconducting polymers, which would have considerable impact ontheir performance in devices. However, previous observations of a density dependent mobilityare complicated by the polycrystalline materials studied. Here we investigate charge transport infield-effect transistors and diodes of two amorphous, glassy fluorene-triarylamine copolymers,and explore the results in terms of a charge-carrier density dependent mobility model. The nondispersivenature of the time-of-flight (TOF) transients and analysis of dark injection transientresults and transistor transfer characteristics indicate a charge-carrier density independentmobility in both the low-density diode and the high-density transistor regimes. The mobilityvalues for optimised transistors are in good agreement with the TOF values at the same field, andboth have the same temperature dependency. The measured transistor mobility falls two to threeorders of magnitude below that predicted from the charge-carrier density dependent model, anddoes not follow the expected power-law relationship. The experimental results for these twoamorphous polymers are therefore consistent with a charge-carrier density independent mobility,and we discuss this in terms of polaron-dominated hopping and interchain correlated disorder.
Lin YH, Thomas SR, Faber H, et al., 2016, Al-Doped ZnO Transistors Processed from Solution at 120 °C, Advanced Electronic Materials, Vol: 2, ISSN: 2199-160X
A simple Al-doping method that is used to significantly enhance the operating characteristics of ZnO thin-film transistors processed from solution at temperatures down to 120 °C is reported. The two-step doping process relies on the dissolution of zinc oxide hydrate in ammonia hydroxide to form an aqueous Zn-ammine complex solution and the subsequent immersion of Al pellets into it at room temperature. The pellets are then removed, and the doped precursor solution is spin-coated onto the substrate followed by thermal annealing in air to form the n-doped ZnO:Al layers. By controlling the immersion time of the Al pellets in the precursor solution, the free electron concentration in ZnO can be tuned. The resulting ZnO:Al layers are shown to be polycrystalline with tuneable electrical properties. ZnO:Al-based transistors processed at 180 °C exhibit enhanced electron mobility when compared to intrinsic ZnO devices with the maximum values exceeding 5 cm2 V−1 s−1. Even when the process temperature is reduced to 120 °C, the ZnO:Al transistors retain their excellent operating characteristics with a maximum electron mobility of 3 cm2 V−1 s−1. This is amongst the highest values reported to date for soluton-deposited ZnO transistors processed at 120 °C in air.
McLachlan MA, Faria JCD, Morbidoni M, et al., 2016, Low-Temperature Solution-Processed Electron Transport Layers for Inverted Polymer Solar Cells, Advanced Electronic Materials, Vol: 2, ISSN: 2199-160X
Processing temperature is highlighted as a convenient means of controlling theoptical and charge transport properties of solution processed electron transportlayers (ETLs) in inverted polymer solar cells. Using the well-studied activelayer - poly(3-hexylthiophene-2,5-diyl) (P3HT):indene-C60 bisadduct (ICBA) –we show the influence of ETL processing temperatures from 25 °C - 450 °C,reporting the role of crystallinity, structure, charge transport and Fermi level(EF) on numerous device performance characteristics. We determine that anexceptionally low temperature processed ETL (110 °C) increases that devicepower conversion efficiency (PCE) by a factor greater than 50% compared witha high temperature (450 °C) processed ETL. Modulations in device series andshunt resistance, induced by changes in the ETL transport properties areobserved in parallel to significant changes in device open circuit voltageattributed to changes on the EF of the ETLs. Our work highlights the importanceof interlayer control in multilayer photovoltaic devices and presents aconvenient material compatible with future flexible and roll-to-roll processes.
Hewlett RM, McLachlan MA, 2016, Surface Structure Modification of ZnO and the Impact on Electronic Properties., Advanced Materials, Vol: 28, Pages: 3893-3921, ISSN: 1521-4095
Zinc oxide (ZnO) is a widely utilized, versatile material implemented in a diverse range of technological applications, particularly in optoelectronic devices, where its inherent transparency, tunable electronic properties, and accessible nanostructures can be combined to confer superior device properties. ZnO is a complex material with a rich and intricate defect chemistry, and its properties can be extremely sensitive to processing methods and conditions; consequently, surface modification of ZnO using both inorganic and organic species has been explored to control and regulate its surface properties, particularly at heterointerfaces in electronic devices. Here, the properties of ZnO are described in detail, particularly its surface chemistry, along with the role of defects in governing its electronic properties, and methods employed to modulate the behavior of as-grown ZnO. An outline is also given on how the native and modified oxide interact with molecular materials. To illustrate the diverse range of surface modification methods and their subsequent influence on electronic properties, a comprehensive review of the modification of ZnO surfaces at molecular interfaces in hybrid photovoltaic (hPV) and organic photovoltaic (OPV) devices is presented. This is a case study rather than a progress report, aiming to highlight the progress made toward controlling and altering the surface properties of ZnO, and to bring attention to the ways in which this may be achieved by using various interfacial modifiers (IMs).
Semple J, Rossbauer S, Burgess CH, et al., 2016, Radio Frequency Coplanar ZnO Schottky Nanodiodes Processed from Solution on Plastic Substrates., Small, Vol: 12, Pages: 1993-2000, ISSN: 1613-6829
Coplanar radio frequency Schottky diodes based on solution-processed C60 and ZnO semiconductors are fabricated via adhesion-lithography. The development of a unique asymmetric nanogap electrode architecture results in devices with a high current rectification ratio (10(3) -10(6) ), low operating voltage (<3 V), and cut-off frequencies of >400 MHz. Device fabrication is scalable and can be performed at low temperatures even on plastic substrates with very high yield.
Labram JG, Treat ND, Lin Y-H, et al., 2016, Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes, Advanced Functional Materials, Vol: 26, Pages: 1656-1663, ISSN: 1616-3028
Porte Y, Maller R, Faber H, et al., 2015, Exploring and controlling intrinsic defect formation in SnO2 thin films, Journal of Materials Chemistry C, Vol: 4, Pages: 758-765, ISSN: 2050-7534
By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by pulsed laser deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures >500 °C. As a consequence films with carrier concentrations in the range 1016–1019 cm−3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect – from tin interstitials (Sni) at low PD (<50 mTorr) to VO at higher PD with similar ranges of carrier concentrations observed. Finally, we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to >100 000 laser pulses. Here carrier concentrations >1 × 1020 cm−3 are observed that are associated with high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.
Berdiyorov G, Harrabi K, Mehmood U, et al., 2015, Derivatization and diffusive motion of molecular fullerenes: Ab initio and atomistic simulations, Journal of Applied Physics, Vol: 118, ISSN: 1089-7550
Using first principles density functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of derivatization on the electronic and transport properties of C60 fullerene. As a typical example, we consider [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), which forms one of the most efficient organic photovoltaic materials in combination with electron donating polymers. Extra peaks are observed in the density of states (DOS) due to the formation of new electronic states localized at/near the attached molecule. Despite such peculiar behavior in the DOS of an isolated molecule, derivatization does not have a pronounced effect on the electronic transport properties of the fullerene molecular junctions. Both C60 and PCBM show the same response to finite voltage biasing with new features in the transmission spectrum due to voltage induced delocalization of some electronic states. We also study the diffusive motion of molecular fullerenes in ethanol solvent and inside poly(3-hexylthiophene) lamella using reactive molecular dynamics simulations. We found that the mobility of the fullerene reduces considerably due to derivatization; the diffusion coefficient of C60 is an order of magnitude larger than the one for PCBM.
Faria JCD, Campbell AJ, McLachlan MA, 2015, ZnO nanorod arrays as electron injection layers for efficient organic light emitting diodes, Advanced Functional Materials, Vol: 25, Pages: 4657-4663, ISSN: 1616-3028
Nanostructured oxide arrays have received significant attention as charge injection and collection electrodes in numerous optoelectronic devices. Zinc oxide (ZnO) nanorods have received particular interest owing to the ease of fabrication using scalable, solution processes with a high degree of control of rod dimension and density. Here, vertical ZnO nanorods as electron injection layers in organic light emitting diodes are implemented for display and lighting purposes. Implementing nanorods into devices with an emissive polymer, poly(9,9-dioctyluorene-alt-benzothiadiazole) (F8BT) and poly(9,9-di-n-octylfluorene-alt-N-(4-butylphenyl)dipheny-lamine) (TFB) as an electron blocking layer, brightness and efficiencies up to 8602 cd m−2 and 1.66 cd A−1 are achieved. Simple solution processing methodologies combined with postdeposition thermal processing are highlighted to achieve complete wetting of the nanorod arrays with the emissive polymer. The introduction of TFB to minimize charge leakage and nonradiative exciton decay results in dramatic increases to device yields and provides an insight into the operating mechanism of these devices. It is demonstrated that the detected emission originates from within the polymer layers with no evidence of ZnO band edge or defect emission. The work represents a significant development for the ongoing implementation of ZnO nanorod arrays into efficient light emitting devices.
Jagadamma LK, Al-Senani M, El-Labban A, et al., 2015, Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer, ADVANCED ENERGY MATERIALS, Vol: 5, ISSN: 1614-6832
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- Citations: 147
Jagadamma LK, Al-Senani M, El-Labban A, et al., 2015, Polymer Solar Cells: Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer (Adv. Energy Mater. 12/2015), Advanced Energy Materials, Vol: 5, Pages: n/a-n/a, ISSN: 1614-6832
Lin Y-H, Faber H, Labram JG, et al., 2015, High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices, Advanced Science, Vol: 2, ISSN: 2198-3844
High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.
Faria JCD, Campbell AJ, McLachlan MA, 2015, ZnO Nanorod Arrays as Electron Injection Layers for Efficient Organic Light Emitting Diodes, Advanced Functional Materials, ISSN: 1616-3028
Faria JCD, Campbell AJ, McLachlan MA, 2015, Fluorene copolymer bilayers for emission colour tuning in inverted hybrid light emitting diodes, Journal of Materials Chemistry C, Vol: 3, Pages: 4945-4953, ISSN: 2050-7534
We present a robust, entirely solution-based processing route for the deposition of planar F8BT/TFB poly(9,9-dioctylfluorene-alt-benzothiadiazole)/poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine) emissive/hole transport bilayers for emission colour tuning in inverted organic–inorganic hybrid light emitting diodes (HyLEDs). Our method allows the facile exploration of TFB thickness for the first time within inverted devices; here we describe the influence of TFB thickness on the device performance. In particular, we demonstrate significant variations in device electroluminescence with highly controlled tunability between green and orange (550 to 610 nm) emission; correlating directly with the thickness of the TFB layer. These changes are in parallel with a 20-fold increase in current efficiency with respect to F8BT-only devices, with our bilayer devices exhibiting luminance values exceeding 11 000 cd m−2. Additionally, through reflectance and angle-dependent electroluminescence measurements we explore the presence of microcavity effects and their impact on device behaviour. We introduce TFB not only as a charge blocking/transporting layer but also as an optical emission-tuning layer.
Labram JG, Lin Y-H, Zhao K, et al., 2015, Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices, Advanced Functional Materials, Vol: 25, Pages: 1727-1736, ISSN: 1616-3028
Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2–24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current–voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2–7.
Faber H, Lin Y-H, Thomas SR, et al., 2015, Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis, ACS APPLIED MATERIALS & INTERFACES, Vol: 7, Pages: 782-790, ISSN: 1944-8244
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- Citations: 72
Venkatesh S, Franklin JB, Ryan MP, et al., 2015, Defect-band mediated ferromagnetism in Gd-doped ZnO thin films, JOURNAL OF APPLIED PHYSICS, Vol: 117, ISSN: 0021-8979
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- Citations: 39
Perumal A, Faber H, Yaacobi-Gross N, et al., 2015, High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer, ADVANCED MATERIALS, Vol: 27, Pages: 93-100, ISSN: 0935-9648
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- Citations: 163
Faria JCD, Campbell AC, McLachlan MA, 2015, Materials for OLEDs and LEDs, Advanced Materials for a Sustainable Energy Future, Editors: Edwards, Payne, Kuznetsov, Publisher: John Wiley & Sons
Chen S, McLachlan M, Sapelkin A, et al., 2015, Aerosol assisted chemical vapour deposition of transparent conductive ZnO thin films with hexagonal microplate surfaces and ultrahigh haze values, JOURNAL OF MATERIALS CHEMISTRY A, Vol: 3, Pages: 22311-22315, ISSN: 2050-7488
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- Citations: 10
Franklin JB, Fleet LR, Burgess CH, et al., 2014, Deposition of low sheet resistance indium tin oxide directly onto functional small molecules, THIN SOLID FILMS, Vol: 570, Pages: 129-133, ISSN: 0040-6090
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- Citations: 6
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