Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Wilson:2021:10.1039/d1ra03263a,
author = {Wilson, RL and Macdonald, TJ and Lin, C-T and Xu, S and Taylor, A and Knapp, CE and Guldin, S and McLachlan, MA and Carmalt, CJ and Blackman, CS},
doi = {10.1039/d1ra03263a},
journal = {RSC Advances: an international journal to further the chemical sciences},
pages = {22199--22205},
title = {Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)},
url = {http://dx.doi.org/10.1039/d1ra03263a},
volume = {11},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Nickel oxide (NiO) has good optical transparency and wide band-gap, and due to the particular alignment of valence and conduction band energies with typical current collector materials has been used in solar cells as an efficient hole transport-electron blocking layer, where it is most commonly deposited via sol–gel or directly deposited as nanoparticles. An attractive alternative approach is via vapour deposition. This paper describes the chemical vapour deposition of p-type nickel oxide (NiO) thin films using the new nickel CVD precursor [Ni(dmamp′)2], which unlike previous examples in literature is synthesised using the readily commercially available dialkylaminoalkoxide ligand dmamp′ (2-dimethylamino-2-methyl-1-propanolate). The use of vapour deposited NiO as a blocking layer in a solar-cell device is presented, including benchmarking of performance and potential routes to improving performance to viable levels.
AU  - Wilson,RL
AU  - Macdonald,TJ
AU  - Lin,C-T
AU  - Xu,S
AU  - Taylor,A
AU  - Knapp,CE
AU  - Guldin,S
AU  - McLachlan,MA
AU  - Carmalt,CJ
AU  - Blackman,CS
DO  - 10.1039/d1ra03263a
EP  - 22205
PY  - 2021///
SN  - 2046-2069
SP  - 22199
TI  - Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)
T2  - RSC Advances: an international journal to further the chemical sciences
UR  - http://dx.doi.org/10.1039/d1ra03263a
UR  - https://pubs.rsc.org/en/content/articlelanding/2021/RA/D1RA03263A#!divAbstract
UR  - http://hdl.handle.net/10044/1/89877
VL  - 11
ER  -
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