Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Mohan:2021:10.1021/acsami.1c09750,
author = {Mohan, L and Ratnasingham, SR and Panidi, J and Daboczi, M and Kim, J-S and Anthopoulos, TD and Briscoe, J and McLachlan, MA and Kreouzis, T},
doi = {10.1021/acsami.1c09750},
journal = {ACS Applied Materials and Interfaces},
pages = {38499--38507},
title = {Determining out-of-plane hole mobility in CuSCN via the time-of-flight technique to elucidate its function in perovskite solar cells},
url = {http://dx.doi.org/10.1021/acsami.1c09750},
volume = {13},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Copper(I) thiocyanate (CuSCN) is a stable, low-cost, solution-processable p-type inorganic semiconductor used in numerous optoelectronic applications. Here, for the first time, we employ the time-of-flight (ToF) technique to measure the out-of-plane hole mobility of CuSCN films, enabled by the deposition of 4 μm-thick films using aerosol-assisted chemical vapor deposition (AACVD). A hole mobility of ∼10–3 cm2/V s was measured with a weak electric field dependence of 0.005 cm/V1/2. Additionally, by measuring several 1.5 μm CuSCN films, we show that the mobility is independent of thickness. To further validate the suitability of our AACVD-prepared 1.5 μm-thick CuSCN film in device applications, we demonstrate its incorporation as a hole transport layer (HTL) in methylammonium lead iodide (MAPbI3) perovskite solar cells (PSCs). Our AACVD films result in devices with measured power conversion efficiencies of 10.4%, which compares favorably with devices prepared using spin-coated CuSCN HTLs (12.6%), despite the AACVD HTLs being an order of magnitude thicker than their spin-coated analogues. Improved reproducibility and decreased hysteresis were observed, owing to a combination of excellent film quality, high charge-carrier mobility, and favorable interface energetics. In addition to providing a fundamental insight into charge-carrier mobility in CuSCN, our work highlights the AACVD methodology as a scalable, versatile tool suitable for film deposition for use in optoelectronic devices.
AU  - Mohan,L
AU  - Ratnasingham,SR
AU  - Panidi,J
AU  - Daboczi,M
AU  - Kim,J-S
AU  - Anthopoulos,TD
AU  - Briscoe,J
AU  - McLachlan,MA
AU  - Kreouzis,T
DO  - 10.1021/acsami.1c09750
EP  - 38507
PY  - 2021///
SN  - 1944-8244
SP  - 38499
TI  - Determining out-of-plane hole mobility in CuSCN via the time-of-flight technique to elucidate its function in perovskite solar cells
T2  - ACS Applied Materials and Interfaces
UR  - http://dx.doi.org/10.1021/acsami.1c09750
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000687172000055&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://pubs.acs.org/doi/10.1021/acsami.1c09750
UR  - http://hdl.handle.net/10044/1/91653
VL  - 13
ER  -
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