Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Macdonald:2021:10.1021/jacs.1c08905,
author = {Macdonald, T and Clancy, A and Xu, W and Jiang, Z and Lin, C-T and Mohan, L and Du, T and Tune, D and Lanzetta, L and Min, G and Webb, T and Ashoka, A and Pandya, R and Tileli, V and McLachlan, M and Durrant, J and Haque, S and Howard, C},
doi = {10.1021/jacs.1c08905},
journal = {Journal of the American Chemical Society},
pages = {21549--21559},
title = {Phosphorene nanoribbon-augmented optoelectronics for enhanced hole extraction},
url = {http://dx.doi.org/10.1021/jacs.1c08905},
volume = {143},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Phosphorene nanoribbons (PNRs) have been widely predicted to exhibit a range of superlative functional properties, however since they have only recently been isolated, these properties are yet to be shown to translate to improved performance in any application. PNRs show particular promise for optoelectronics, given their predicted high exciton binding energies, tunable band gaps, and ultrahigh hole mobilities. Here, we verify the theorized enhanced hole mobility in both solar cells and space-charge-limited-current devices, demonstrating the potential for PNRs improving hole extraction in universal optoelectronic applications. Specifically, PNRs are demonstrated to act as an effective charge-selective interlayer by enhancing hole extraction from polycrystalline methylammonium lead iodide (MAPbI3) perovskite to the poly(triarylamine) semiconductor. Introducing PNRs at the hole-transport/ MAPbI3 interface achieves fill factors above 0.83 and efficiencies exceeding 21% for planar p-i-n (inverted) perovskite solar cells (PSCs). Such efficiencies are typically only reported in single-crystalline MAPbI3-based inverted PSCs. Methylammonium-free PSCs also benefit from a PNR interlayer, verifying applicability to architectures incorporating mixed perovskite absorber layers. Device photoluminescence and transient absorption spectroscopy are used to demonstrate that the presence of the PNRs drives more effective carrier extraction. Isolation of the PNRs in space-charge-limited-current hole-only devices improves both hole mobility and conductivity; demonstrating applicability beyond PSCs. This work provides primary experimental evidence that the predicted superlative functional properties of PNRs indeed translate to improved optoelectronic performance.
AU  - Macdonald,T
AU  - Clancy,A
AU  - Xu,W
AU  - Jiang,Z
AU  - Lin,C-T
AU  - Mohan,L
AU  - Du,T
AU  - Tune,D
AU  - Lanzetta,L
AU  - Min,G
AU  - Webb,T
AU  - Ashoka,A
AU  - Pandya,R
AU  - Tileli,V
AU  - McLachlan,M
AU  - Durrant,J
AU  - Haque,S
AU  - Howard,C
DO  - 10.1021/jacs.1c08905
EP  - 21559
PY  - 2021///
SN  - 0002-7863
SP  - 21549
TI  - Phosphorene nanoribbon-augmented optoelectronics for enhanced hole extraction
T2  - Journal of the American Chemical Society
UR  - http://dx.doi.org/10.1021/jacs.1c08905
UR  - https://pubs.acs.org/doi/10.1021/jacs.1c08905#
UR  - http://hdl.handle.net/10044/1/92754
VL  - 143
ER  -
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