Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Du:2022:10.1002/adma.202107850,
author = {Du, T and Macdonald, TJ and Yang, RX and Li, M and Jiang, Z and Mohan, L and Xu, W and Su, Z and Gao, X and Whiteley, R and Lin, C-T and Min, G and Haque, SA and Durrant, JR and Persson, KA and McLachlan, MA and Briscoe, J},
doi = {10.1002/adma.202107850},
journal = {Advanced Materials},
pages = {1--10},
title = {Additive-free, low-temperature crystallization of stable alpha-FAPbI(3) perovskite},
url = {http://dx.doi.org/10.1002/adma.202107850},
volume = {34},
year = {2022}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Formamidinium lead triiodide (FAPbI3) is attractive for photovoltaic devices due to its optimal bandgap at around 1.45 eV and improved thermal stability compared with methylammonium-based perovskites. Crystallization of phase-pure α-FAPbI3 conventionally requires high-temperature thermal annealing at 150 °C whilst the obtained α-FAPbI3 is metastable at room temperature. Here, aerosol-assisted crystallization (AAC) is reported, which converts yellow δ-FAPbI3 into black α-FAPbI3 at only 100 °C using precursor solutions containing only lead iodide and formamidinium iodide with no chemical additives. The obtained α-FAPbI3 exhibits remarkably enhanced stability compared to the 150 °C annealed counterparts, in combination with improvements in film crystallinity and photoluminescence yield. Using X-ray diffraction, X-ray scattering, and density functional theory simulation, it is identified that relaxation of residual tensile strains, achieved through the lower annealing temperature and post-crystallization crystal growth during AAC, is the key factor that facilitates the formation of phase-stable α-FAPbI3. This overcomes the strain-induced lattice expansion that is known to cause the metastability of α-FAPbI3. Accordingly, pure FAPbI3 p–i–n solar cells are reported, facilitated by the low-temperature (≤100 °C) AAC processing, which demonstrates increases of both power conversion efficiency and operational stability compared to devices fabricated using 150 °C annealed films.
AU  - Du,T
AU  - Macdonald,TJ
AU  - Yang,RX
AU  - Li,M
AU  - Jiang,Z
AU  - Mohan,L
AU  - Xu,W
AU  - Su,Z
AU  - Gao,X
AU  - Whiteley,R
AU  - Lin,C-T
AU  - Min,G
AU  - Haque,SA
AU  - Durrant,JR
AU  - Persson,KA
AU  - McLachlan,MA
AU  - Briscoe,J
DO  - 10.1002/adma.202107850
EP  - 10
PY  - 2022///
SN  - 0935-9648
SP  - 1
TI  - Additive-free, low-temperature crystallization of stable alpha-FAPbI(3) perovskite
T2  - Advanced Materials
UR  - http://dx.doi.org/10.1002/adma.202107850
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000745853700001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://onlinelibrary.wiley.com/doi/10.1002/adma.202107850
UR  - http://hdl.handle.net/10044/1/94466
VL  - 34
ER  -
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