Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Jiang:2023:10.1002/admi.202201737,
author = {Jiang, Z and Du, T and Lin, C and Macdonald, TJ and Chen, J and Chin, Y and Xu, W and Ding, B and Kim, J and Durrant, JR and Heeney, M and McLachlan, MA},
doi = {10.1002/admi.202201737},
journal = {Advanced Materials Interfaces},
title = {Deciphering the role of hole transport layer HOMO level on the open circuit voltage of perovskite Solar cells},
url = {http://dx.doi.org/10.1002/admi.202201737},
volume = {10},
year = {2023}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - With the rapid development of perovskite solar cells, reducing losses in open-circuit voltage (Voc) is a key issue in efforts to further improve device performance. Here it is focused on investigating the correlation between the highest occupied molecular orbital (HOMO) of device hole transport layers (HTLs) and device Voc. To achieve this, structurally similar HTL materials with comparable optical band gaps and doping levels, but distinctly different HOMO levels are employed. Using light-intensity dependent Voc and photoluminescence measurements significant differences in the behavior of devices employing the two HTLs are highlighted. Light-induced increase of quasi-Fermi level splitting (ΔEF) in the perovskite layer results in interfacial quasi-Fermi level bending required to align with the HOMO level of the HTL, resulting in the Voc measured at the contacts being smaller than the ΔEF in the perovskite. It is concluded that minimizing the energetic offset between HTLs and the perovskite active layer is of great importance to reduce non-radiative recombination losses in perovskite solar cells with high Voc values that approach the radiative limit.
AU  - Jiang,Z
AU  - Du,T
AU  - Lin,C
AU  - Macdonald,TJ
AU  - Chen,J
AU  - Chin,Y
AU  - Xu,W
AU  - Ding,B
AU  - Kim,J
AU  - Durrant,JR
AU  - Heeney,M
AU  - McLachlan,MA
DO  - 10.1002/admi.202201737
PY  - 2023///
SN  - 2196-7350
TI  - Deciphering the role of hole transport layer HOMO level on the open circuit voltage of perovskite Solar cells
T2  - Advanced Materials Interfaces
UR  - http://dx.doi.org/10.1002/admi.202201737
UR  - https://onlinelibrary.wiley.com/doi/10.1002/admi.202201737
UR  - http://hdl.handle.net/10044/1/101265
VL  - 10
ER  -
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