Imperial College London

ProfessorNeilAlford

Central FacultyOffice of the Provost

Associate Provost (Academic Planning)
 
 
 
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Contact

 

+44 (0)20 7594 6724n.alford

 
 
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Assistant

 

Miss Catherine Graham +44 (0)20 7594 3330

 
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Location

 

2..05 (in RSM) or 3.09 (in the Faculty Building)Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Roqan:2015:10.1063/1.4908288,
author = {Roqan, IS and Venkatesh, S and Zhang, Z and Hussain, S and Bantounas, I and Franklin, JB and Flemban, TH and Zou, B and Lee, J-S and Schwingenschlogl, U and Petrov, PK and Ryan, MP and Alford, NM},
doi = {10.1063/1.4908288},
journal = {Journal of Applied Physics},
title = {Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes},
url = {http://dx.doi.org/10.1063/1.4908288},
volume = {117},
year = {2015}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline Gdx Zn 1−xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.
AU - Roqan,IS
AU - Venkatesh,S
AU - Zhang,Z
AU - Hussain,S
AU - Bantounas,I
AU - Franklin,JB
AU - Flemban,TH
AU - Zou,B
AU - Lee,J-S
AU - Schwingenschlogl,U
AU - Petrov,PK
AU - Ryan,MP
AU - Alford,NM
DO - 10.1063/1.4908288
PY - 2015///
SN - 1089-7550
TI - Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes
T2 - Journal of Applied Physics
UR - http://dx.doi.org/10.1063/1.4908288
UR - http://hdl.handle.net/10044/1/41513
VL - 117
ER -