Imperial College London


Central FacultyOffice of the Provost

Associate Provost (Academic Planning)



+44 (0)20 7594 6724n.alford




Miss Catherine Graham +44 (0)20 7594 3330




2..05 (in RSM) or 3.09 (in the Faculty Building)Royal School of MinesSouth Kensington Campus






BibTex format

author = {Liu, G and Feng, H and Liu, B and Wang, Y and Liu, W and Zou, B and Alford, NM and Petrov, PK},
doi = {10.1016/j.jcrysgro.2016.09.035},
journal = {Journal of Crystal Growth},
pages = {13--18},
title = {Formation of V-grooves in SrRuO3 epitaxial film},
url = {},
volume = {455},
year = {2016}

RIS format (EndNote, RefMan)

AB - SrRuO3 thin films were epitaxially grown on a (001) SrTiO3 substrate using pulsed laser deposition technique. Various defects such as V-grooves, threading dislocations and dislocation dipoles are observed in the SrRuO3 epitaxial film. It is found that the sidewalls of most V-grooves are {101} facets, and the dominant angle between the sidewalls is 90°. Some threading dislocations end at the apexes of the V-grooves while the others penetrate the entire film. The threading dislocations and V-grooves can partially relieve the strain in the epitaxial SrRuO3 film. During the relaxation process, a two-dimensional growth mode transforms into a three-dimensional one, along with the formation of mesa-like islands separated by V-grooves. The dimensions and distributions of V-grooves are associated with the growth conditions. The control of growth mechanism and surface morphology are very important for the fabrication of novel perovskite oxide devices.
AU - Liu,G
AU - Feng,H
AU - Liu,B
AU - Wang,Y
AU - Liu,W
AU - Zou,B
AU - Alford,NM
AU - Petrov,PK
DO - 10.1016/j.jcrysgro.2016.09.035
EP - 18
PY - 2016///
SN - 0022-0248
SP - 13
TI - Formation of V-grooves in SrRuO3 epitaxial film
T2 - Journal of Crystal Growth
UR -
UR -
VL - 455
ER -