Imperial College London

ProfessorNeilAlford

Central FacultyOffice of the Provost

Associate Provost (Academic Planning)
 
 
 
//

Contact

 

+44 (0)20 7594 6724n.alford

 
 
//

Assistant

 

Miss Catherine Graham +44 (0)20 7594 3330

 
//

Location

 

2..05 (in RSM) or 3.09 (in the Faculty Building)Royal School of MinesSouth Kensington Campus

//

Summary

 

Publications

Citation

BibTex format

@article{Ptashnik:2017:10.1038/s41598-017-14895-8,
author = {Ptashnik, SV and Mikhailov, AK and Yastrebov, AV and Petrov, PK and Liu, W and Alford, N and Hirsch, S and Kozyrev, AB},
doi = {10.1038/s41598-017-14895-8},
journal = {Scientific Reports},
title = {Ferroelectric thin film acoustic devices with electrical multiband switching ability},
url = {http://dx.doi.org/10.1038/s41598-017-14895-8},
volume = {7},
year = {2017}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Design principles of a new class of microwave thin film bulk acoustic resonators with multiband resonance frequency switching ability are presented. The theory of the excitation of acoustic eigenmodes in multilayer ferroelectric structures is considered, and the principle of selectivity for resonator with an arbitrary number of ferroelectric layers is formulated. A so called “criterion function” is suggested that allows to determine the conditions for effective excitation at one selected resonance mode with suppression of other modes. The proposed theoretical approach is verifiedusing thepreexisting experimental data published elsewhere. Finally, the possible application of the two ferroelectric layers structures for switchable microwave overtone resonators, binary and quadrature phase-shift keying modulators are discussed. These devices could play a pivotal role in the miniaturization of microwave front-end antenna circuits.
AU - Ptashnik,SV
AU - Mikhailov,AK
AU - Yastrebov,AV
AU - Petrov,PK
AU - Liu,W
AU - Alford,N
AU - Hirsch,S
AU - Kozyrev,AB
DO - 10.1038/s41598-017-14895-8
PY - 2017///
SN - 2045-2322
TI - Ferroelectric thin film acoustic devices with electrical multiband switching ability
T2 - Scientific Reports
UR - http://dx.doi.org/10.1038/s41598-017-14895-8
UR - http://hdl.handle.net/10044/1/50763
VL - 7
ER -