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BibTex format

author = {Petrov, PK and Palkar, VR and Alford, NMN and Tagantsev, AK and Prashanthi, K and Chien, HI and Axelsson, AK and Bhattacharya, S},
doi = {10.1557/proc-0966-t05-08},
pages = {28--33},
title = {Microwave responce from La- and Dy- doped BiFeO<inf>3</inf> thin films},
url = {},
year = {2006}

RIS format (EndNote, RefMan)

AB - The dielectric response of La- and Dy- doped BiFeO3 thin films to electric- and magnetic fields was measured at microwave frequencies (up to 12GHz) in a temperature range from 25°C to 300°C. Interesting phenomena were observed. Significant oscillations in the C(f) characteristic which were unaffected by the electric field or by elevated temperature but which were dampened by a magnetic field. We also observed 'N'-type I-V characteristics. A possible explanation for this mesoscopic response is the presence of structural features that cause resonance (e.g. grains, grain-boundaries, domains, domain walls etc), with a contribution strong enough to be averaged by the system. The exact origin of these features is unknown at present. © 2007 Materials Research Society.
AU - Petrov,PK
AU - Palkar,VR
AU - Alford,NMN
AU - Tagantsev,AK
AU - Prashanthi,K
AU - Chien,HI
AU - Axelsson,AK
AU - Bhattacharya,S
DO - 10.1557/proc-0966-t05-08
EP - 33
PY - 2006///
SN - 0272-9172
SP - 28
TI - Microwave responce from La- and Dy- doped BiFeO<inf>3</inf> thin films
UR -
ER -