Imperial College London

Dr Niloufar RaeisHosseini

Faculty of EngineeringDepartment of Electrical and Electronic Engineering

Honorary Research Fellow
 
 
 
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Contact

 

+44 (0)7928 513 772n.raeishosseini Website

 
 
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Location

 

907Electrical EngineeringSouth Kensington Campus

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Summary

 

Summary

Dr. Niloufar RaeisHosseini (Nellie), is an honorary research fellow in the Department of Electrical and Electronic Engineering (EEE), Imperial College London, where she conducts her research in a multi-disciplinary team of “Circuit and Systems”. She is an awardee of “Newton International Fellowship” offered by the “Royal Society”. She is an international expert in nanoelectronic materials and nanoscale devices. She has fulfilled her first postdoctoral fellowship by awarding a professional research grant from the National Research Foundation (NRF) of South Korean government by joining in “Nanoscale Photonics & Integrated Manufacturing” group at “Pohang University of Science and Technology” (POSTECH), soon after receiving her Ph.D. in “Nanoelectronic Materials and Devices” from the same university. POSTECH as a world-leading research-based university was a place where she gained more than seven years of successful experiences in thin film semiconductor processing, subwavelength nanofabrication, and development of nanoelectronics focusing on Nonvolatile Memories (NVMs), and Neuromorphic Devices. In addition to obtaining practical skills in the fabrication of nanoelectronics, bioinspired synapse, optoelectronics, and nanophotonic devices in a cleanroom environment, she fabricated chalcogenide-based reconfigurable metadevices and realized the origin of switching phenomena using conductive atomic force microscopy (c-AFM) in atomic scale.

Her research interest spins around the design, fabrication, characterization, and optimization of semiconductor nanodevices including CMOS-compatible Nanoelectronics, and Emerging NVMs. Her main focus is on the improvement of reliability of Resistive Switching Random Access Memories (ReRAMs), Memristors, Conductive Bridge- (CBRAMs), Valence Change Memories (VCMs or OxiRAMs), and Phase Change-RAMs (PCRAMs). She has also developed a new generation of transparent and Flexible Nonvolatile bioMemories and Artificial Synapses with biocompatibility and skin-attachability to pave the way for wearable and implantable electronics. Her research targets the design and fabrication of novel nanoelectronic/nanophotonic devices/systems to overlap academia with industry. 

Niloufar RaeisHosseini was actively participated in collaborative projects between industry and academia with “Samsung Electronics” and “SK-Hynix” to realize a 3-D ReRAM with securing its reliability for the new generation of NVMs. Getting involved in various industrial projects gave her the fundamental knowledge of memory systems including DRAM/SRAM, ReRAM, and MRAM, their usage model, characterizations, and measurements. She was also nominated as the “Young Scientist” in the semiconductor industry by winning a competitive program from “SK-Hynix” for two consequent years in 2014 and 2015. She won an SK-Hynix Fellowship program owing to her novel idea on NVMs and Bio-inspired Neuromorphic Devices.

Her work has published in some of the top scientific journals in the field of materials, chemical, and electrical engineering, as well as nanotechnology. Her google scholar citation for her first-author publications reachs over 231 (January 2019). 

Selected Publications

Journal Articles

Ambrosi E, Bartlett P, Berg AI, et al., 2019, Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion, Faraday Discussions, Vol:213, ISSN:1359-6640, Pages:115-150

More Publications