Imperial College London
Alternate

DrPeterPetrov

Faculty of Engineering, Department of Materials

Principal Research Scientist
 
 
 
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Contact

 

+44 (0)20 7594 8156p.petrov

 
 
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Location

 

2.03DRoyal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Gusken:2019:10.1021/acsphotonics.8b01639,
author = {Gusken, NA and Lauri, A and Li, Y and Matsui, T and Doiron, B and Bower, R and Regoutz, A and Mihai, A and Petrov, PK and Oulton, RF and Cohen, LF and Maier, SA},
doi = {10.1021/acsphotonics.8b01639},
journal = {ACS Photonics},
pages = {953--960},
title = {TiO2-x-enhanced IR hot carrier based photodetection in metal thin film-si junctions},
url = {http://dx.doi.org/10.1021/acsphotonics.8b01639},
volume = {6},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We investigate titanium nitride (TiN) thin film coatings on silicon for CMOS-compatible sub-bandgap charge separation upon incident illumination, which is a key feature in the vast field of on-chip photodetection and related integrated photonic devices. Titanium nitride of tunable oxidation distributions serves as an adjustable broadband light absorber with high mechanical robustness and strong chemical resistivity. Backside-illuminated TiN on p-type Si (pSi) constitutes a self-powered and refractory alternative for photodetection, providing a photoresponsivity of about ∼1 mA/W at 1250 nm and zero bias while outperforming conventional metal coatings such as gold (Au). Our study discloses that the enhanced photoresponse of TiN/pSi in the near-infrared spectral range is directly linked to trap states in an ultrathin TiO2–x interfacial interlayer that forms between TiN and Si. We show that a pSi substrate in conjunction with a few nanometer thick amorphous TiO2–x film can serve as a platform for photocurrent enhancement of various other metals such as Au and Ti. Moreover, the photoresponse of Au on a TiO2–x/pSi platform can be increased to about 4 mA/W under 0.45 V reverse bias at 1250 nm, allowing for controlled photoswitching. A clear deviation from the typically assumed Fowler-like response is observed, and an alternative mechanism is proposed to account for the metal/semiconductor TiO2–x interlayer, capable of facilitating hole transport.
AU  - Gusken,NA
AU  - Lauri,A
AU  - Li,Y
AU  - Matsui,T
AU  - Doiron,B
AU  - Bower,R
AU  - Regoutz,A
AU  - Mihai,A
AU  - Petrov,PK
AU  - Oulton,RF
AU  - Cohen,LF
AU  - Maier,SA
DO  - 10.1021/acsphotonics.8b01639
EP  - 960
PY  - 2019///
SN  - 2330-4022
SP  - 953
TI  - TiO2-x-enhanced IR hot carrier based photodetection in metal thin film-si junctions
T2  - ACS Photonics
UR  - http://dx.doi.org/10.1021/acsphotonics.8b01639
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000465188900020&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/70160
VL  - 6
ER  -
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